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A kind of cu-nbmotaw alloy and preparation method thereof

An alloy and element technology, applied in the field of Cu-NbMoTaW alloy and its preparation, can solve the problems of accelerated damage of micro-nano devices, low mechanical strength, easy to be scratched, etc., achieve good ductility, improve mechanical properties, and good fatigue resistance Effect

Active Publication Date: 2020-11-10
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, its mechanical strength is low, and it is easy to be scratched during the interconnection manufacturing process, causing surface damage, thereby accelerating the damage of micro-nano devices

Method used

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  • A kind of cu-nbmotaw alloy and preparation method thereof
  • A kind of cu-nbmotaw alloy and preparation method thereof
  • A kind of cu-nbmotaw alloy and preparation method thereof

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preparation example Construction

[0032] A preparation method of Cu-NbMoTaW alloy, comprising the following steps;

[0033] Step 1. Take the monocrystalline silicon substrate polished on one side, ultrasonically clean it in chemically pure acetone and ethanol for 10 minutes, and then dry it quickly with warm air to make the surface clean and free of stains and dust. After ultrasonic treatment, The surface roughness of the single crystal silicon substrate is less than 0.8nm. Ultrasonic cleaning of the polished single crystal silicon substrate is beneficial to improve the bonding force between the alloy and the substrate.

[0034] Step 2. Fix the ultrasonically cleaned silicon substrate on the substrate, and send it into the magnetron sputtering coating chamber with automatic machinery, and vacuumize until the vacuum degree of the background is 4.0×10 -4 Below Pa.

[0035] Step 3, using magnetron sputtering co-sputtering technology to deposit and prepare Cu-NbMoTaW alloy on the silicon substrate;

[0036] Amo...

Embodiment 1

[0040] A preparation method of Cu-NbMoTaW alloy, comprising the following steps;

[0041] In step 1, the monocrystalline silicon substrate is ultrasonically cleaned in analytically pure acetone and ethanol for 10 minutes each, and then quickly dried with warm air.

[0042] Step 2, fix the monocrystalline silicon substrate on the base plate, mechanically and automatically send it into the magnetron sputtering vacuum coating chamber, and pump it until the vacuum degree of the background is 4.0×10 -4 Below Pa.

[0043] Step 3, using magnetron sputtering DC and RF power co-sputtering to deposit Cu-NbMoTaW alloy on the ultrasonically cleaned single crystal silicon substrate;

[0044]Among them, the purity of the Cu target is 99.99wt%, the DC power supply is used, the power is 200W, the purity of the NbMoTaW alloy target is 99.97wt%, the RF power supply is used, the power is 20W, the deposition pressure is set to 0.5Pa, the deposition temperature is room temperature, and the substr...

Embodiment 2

[0048] A preparation method of Cu-NbMoTaW alloy, comprising the following steps;

[0049] In step 1, the monocrystalline silicon substrate is ultrasonically cleaned in analytically pure acetone and ethanol for 10 minutes each, and then quickly dried with warm air.

[0050] Step 2, fix it on the substrate, mechanically and automatically send it into the magnetron sputtering vacuum coating chamber, and pump it until the vacuum degree of the background is 4.0×10 -4 Below Pa.

[0051] Step 3, using magnetron sputtering DC + RF power co-sputtering to deposit Cu-NbMoTaW alloy on the ultrasonically cleaned single crystal silicon substrate;

[0052] Among them, the purity of the Cu target is 99.99wt%, the DC power supply is used, the power is 200W, the purity of the NbMoTaW alloy target is 99.97wt%, the RF power supply is used, the power is 80W, the deposition pressure is set to 0.5Pa, the deposition temperature is room temperature, and the substrate speed is 15r / min, the DC power ...

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Abstract

The invention discloses a Cu-NbMoTaW alloy and a preparation method thereof. The Cu-NbMoTaW alloy is composed of the following components, the four elements of Nb, Mo, Ta and W are equal, the total atomic percentage of NbMoTaW (a high-entropy alloy, HEA) is 1.9-22.1, and the balance is Cu. The specific steps are as follows: step 1, firstly, ultrasonic cleaning and drying are performed on the surface of a silicon base body; step 2, a base disk is conveyed into a magnetron sputtering film coating chamber for vacuumizing; step 3, the Cu-NbMoTaW alloy is prepared by adopting direct current + radiofrequency power source co-sputtering; and step 4, retreating is performed after a sample is sufficiently cooled in a vacuum chamber. The Cu-NbMoTaW alloy and the preparation method thereof can avoidnon-uniform distribution of alloy elements in materials, the obtained alloy is a nanometer twin crystal material, a twin crystal lamella is small in size, and the comprehensive mechanical performanceof an alloy material is effectively improved.

Description

technical field [0001] The invention belongs to the field of metal structural materials, in particular to a Cu-NbMoTaW alloy and a preparation method thereof. Background technique [0002] Micro-device is an advanced manufacturing technology platform developed on the basis of microelectronic semiconductor manufacturing technology. MEMS integrates micro sensors, actuators, signal processing and control circuits, interface circuits, communications and power supplies. It is an interdisciplinary subject developed based on ever-changing advanced manufacturing methods. Information and other military and civilian fields have been applied in all directions. The common feature of the products is that the characteristic size of the materials used is gradually reduced from micron to submicron level or even to nanometer level, that is, in the category of mesoscopic scale. Mechanical deformation is usually unstable and prone to sudden failure. Therefore, in order to ensure the stable a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C9/00C23C14/14C23C14/16C23C14/35
CPCC22C9/00C22C2200/04C23C14/14C23C14/165C23C14/352
Inventor 张金钰赵建拓王亚强吴凯刘刚孙军
Owner XI AN JIAOTONG UNIV