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High-performance infrared detector based on GaSb nanowires with high hole mobility and preparation method thereof

A mobility, nanowire technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology for materials and surface science, can solve problems such as low hole mobility, achieve simple operation, strong process controllability, The effect of excellent optoelectronic properties

Active Publication Date: 2019-08-23
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the problem of low hole mobility of GaSb nanowires at present, and the defect that most existing infrared detectors are based on toxic mercury cadmium telluride materials, the present invention provides a synthesis method of GaSb nanowires with high hole mobility and based on High-performance infrared detection device and preparation method of the GaSb nanowire

Method used

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  • High-performance infrared detector based on GaSb nanowires with high hole mobility and preparation method thereof
  • High-performance infrared detector based on GaSb nanowires with high hole mobility and preparation method thereof
  • High-performance infrared detector based on GaSb nanowires with high hole mobility and preparation method thereof

Examples

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Embodiment 1

[0046] Using a double temperature zone horizontal tube furnace, place a boron nitride crucible containing 0.4 g of GaSb powder in the upstream source area, 15 cm away from the sample, and place a crucible containing 0.5 g of surfactant sulfur powder in the GaSb powder and growth area In the middle, 9 cm from the sample, Si / SiO covered with a 120 nm metallic tin film 2 The substrate is placed in the middle of the downstream temperature zone as a catalyst and light doping source for nanowire growth. Pump down the pressure of the tube furnace system to 10 -3 Hold and pass hydrogen for 30 minutes, its purity is 99.999%, and the gas flow is 200 sccm. Raise the temperature of the source region to 750° C. and at the same time raise the temperature of the growth region to 550° C. and grow for 25 minutes. After the growth is finished, the source region and the growth region stop heating at the same time and gradually cool down to room temperature to complete the synthesis step of the...

Embodiment 2

[0051] A 200nm metal tin film was selected as the catalyst and light doping source for growing GaSb nanowires with high hole mobility, and other steps were the same as in Example 1.

Embodiment 3

[0053] A 300nm metal tin film was selected as the catalyst and light doping source for growing GaSb nanowires with high hole mobility, and other steps were the same as in Example 1.

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Abstract

The invention relates to a high-performance infrared detector based on GaSb nanowires with high hole mobility and a preparation method thereof. Controllable growth of the GaSb nanowires with high holemobility is achieved by using a double temperature zone vapor phase method with metal tin acting as a catalyst and a lightly doped source. The field effect hole mobility is over 1000cm<2>V<-1>s<-1>.The high-performance GaSb nanowire infrared detector prepared by the micro-nano processing technology comprises a Si / SiO2 substrate, a single GaSb nanowire and a metal electrode. The device has excellent photoelectric characteristics and presents a high degree of response of 104 A / W to infrared light of 1550nm and ultra-fast response time of 143.4 microseconds and 237.0 microseconds. The process is highly controllable, operation is easy and cost is low.

Description

technical field [0001] The invention relates to a high-performance infrared detector based on GaSb nanowires with high hole mobility and a preparation method thereof, belonging to the field of semiconductor nanomaterials and devices. Background technique [0002] Semiconductor infrared detectors have important applications in national defense fields such as intelligence, surveillance, investigation, precision guidance, and laser positioning, as well as in civilian fields such as agricultural monitoring, biomedicine, space remote sensing, and machine vision. The characteristic performance of infrared detectors includes equivalent noise power or detectivity, responsivity, photocurrent gain, response time, etc. Among them, responsivity and response time are important parameters to describe the photoelectric conversion capability and speed of the device respectively. High responsivity requires high detector mobility, long free carrier lifetime, high quantum efficiency, and small...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0304H01L31/112H01L31/18B82Y30/00
CPCB82Y30/00H01L31/03042H01L31/112H01L31/18Y02P70/50
Inventor 杨再兴孙嘉敏韩明明
Owner SHANDONG UNIV