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A kind of in situ growth nanometer based on the surface of non-metallic mineral electrode substrate 2 o 3 room temperature no 2 Sensor and preparation method

A non-metallic mineral, substrate surface technology, applied in nanotechnology for materials and surface science, nanotechnology for sensing, nanotechnology, etc., can solve the problems of single, slow recovery, complex preparation methods, etc. , to achieve the effect of reducing production cost, increasing density and simple synthesis process

Active Publication Date: 2020-05-29
NORTHEASTERN UNIV LIAONING
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For the current In 2 o 3 The preparation method of the gas sensor is relatively complex, single deficiency, and low concentration of NO at room temperature 2 The response / recovery speed of gas is slow and other problems, the present invention provides a kind of in-situ growth nanometer In based on porous ceramic electrode 2 o 3 NO 2 Sensor and its preparation method, and in the recovery stage of the gas sensor, the surface of the gas-sensitive material is irradiated by a UV ultraviolet lamp to achieve a rapid recovery effect

Method used

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  • A kind of in situ growth nanometer based on the surface of non-metallic mineral electrode substrate <sub>2</sub> o <sub>3</sub> room temperature no <sub>2</sub> Sensor and preparation method
  • A kind of in situ growth nanometer based on the surface of non-metallic mineral electrode substrate <sub>2</sub> o <sub>3</sub> room temperature no <sub>2</sub> Sensor and preparation method
  • A kind of in situ growth nanometer based on the surface of non-metallic mineral electrode substrate <sub>2</sub> o <sub>3</sub> room temperature no <sub>2</sub> Sensor and preparation method

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Embodiment 1

[0030] Based on non-metallic mineral material porous ceramic electrode substrate, its structure schematic diagram is as follows figure 1 shown. The electrodes on the substrate surface are formed by sputtering Ni and Au thin films successively on the porous ceramic substrate covered with interdigitated electrode masks by DC sputtering method, the thickness of the Ni thin film is 10nm, and the thickness of the Au thin film is 50nm, the interdigital width is 0.5mm, and the interdigital spacing is 0.5mm.

[0031] The specific sputtering steps are first sputtering a layer of Ni film, the sputtering current is 17mA, and the sputtering time is 120s; then sputtering a layer of Au film, the sputtering current is 10mA, and the sputtering time is 230s; Sputtering environmental conditions are: argon gas flow rate 200sccm, vacuum degree 90mTorr, sputtering using plasma sputtering apparatus (Hefei Kejing Material Technology Co., Ltd., VTC-16-3HD).

[0032] The material of the porous ceram...

Embodiment 2

[0044] Based on non-metallic mineral material porous ceramic electrode substrate, its structure schematic diagram is as follows figure 1 shown. The electrodes on the substrate surface are formed by sputtering Ni and Au thin films successively on the porous ceramic substrate covered with interdigitated electrode masks by DC sputtering method, the thickness of the Ni thin film is 10nm, and the thickness of the Au thin film 50nm, interdigital width 0.5mm, interdigital spacing 0.5mm.

[0045] The specific sputtering steps are first sputtering a layer of Ni film, the sputtering current is 17mA, and the sputtering time is 120s; then sputtering a layer of Au film, the sputtering current is 10mA, and the sputtering time is 230s; The ambient conditions for sputtering are as follows: argon gas flow rate is 200 sccm, vacuum degree is 90 mTorr, and a plasma sputtering apparatus (Hefei Kejing Material Technology Co., Ltd., VTC-16-3HD) is used for sputtering.

[0046]The material of the p...

Embodiment 3

[0057] Based on non-metallic mineral material porous ceramic electrode substrate, its structure schematic diagram is as follows figure 1 shown. The electrodes on the substrate surface are formed by sputtering Ni and Au thin films successively on the porous ceramic substrate covered with interdigitated electrode masks by DC sputtering method, the thickness of the Ni thin film is 10nm, and the thickness of the Au thin film 50nm, interdigital width 0.5mm, interdigital spacing 0.5mm.

[0058] The specific sputtering steps are first sputtering a layer of Ni film, the sputtering current is 17mA, and the sputtering time is 120s; then sputtering a layer of Au film, the sputtering current is 10mA, and the sputtering time is 230s; The ambient conditions for sputtering are: argon flow rate of 200 sccm, vacuum degree of 90 mTorr, and sputtering using a plasma sputtering apparatus (Hefei Kejing Material Technology Co., Ltd., VTC-16-3HD).

[0059] The material of the porous ceramic electr...

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Abstract

The invention discloses a method for in-situ growth of nanometer In based on the surface of a non-metallic mineral electrode substrate. 2 O 3 room temperature NO 2 A sensor and a preparation method belong to the field of gas sensors of metal oxide semiconductor materials. The invention uses a non-metallic mineral porous ceramic electrode as a substrate, uses a DC sputtering method to sputter interdigital electrodes on the surface of the substrate, and uses a hydrothermal method to grow In in situ on its surface. 2 O 3 Nanomaterials, the In 2 O 3 The nanomaterial has a rod-like structure and is evenly and densely distributed on the surface of the substrate. Its diameter is 120~200nm and its length is 0.5~1μm. The rod-like structure is composed of nanoparticles stacked on each other. The nanoparticles are In 2 O 3 Cubic phase crystal structure, its diameter is 10~30nm. This gas sensor can detect 0.1~1ppm NO under room temperature working conditions and with UV light-assisted recovery. 2 It has fast response and recovery speed, excellent selectivity and long-term stability, and has good application prospects.

Description

technical field [0001] The invention belongs to the technical field of gas sensors of metal oxide semiconductor materials, in particular to a nano-In 2 o 3 Gas sensor and its preparation method, especially related to a kind of in-situ growth nano In on the surface of non-metallic mineral electrode substrate 2 o 3 room temperature NO 2 Sensors and methods of preparation. Background technique [0002] Nitrogen dioxide (NO 2 ) is a toxic and irritating gas emitted from automobile exhaust and industrial production processes, and is one of the main substances that form acid rain and photochemical smog pollution. Even 1ppm of NO 2 It will also cause great harm to the human body, so for low concentrations of NO 2 detection is extremely necessary. Metal oxide semiconductor gas sensors have been widely used in the detection of toxic and harmful gases because of their high sensitivity, online real-time monitoring, miniaturization, easy integration, and strong portability. Curr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12B82Y15/00B82Y30/00
CPCB82Y15/00B82Y30/00G01N27/127
Inventor 沈岩柏钟祥熙张津高淑玲魏德洲张云海魏可峰
Owner NORTHEASTERN UNIV LIAONING
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