A kind of in situ growth nanometer based on the surface of non-metallic mineral electrode substrate 2 o 3 room temperature no 2 Sensor and preparation method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NORTHEASTERN UNIV LIAONING
- Publication Date
- 2020-05-29
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of gas sensors of metal oxide semiconductor materials, in particular to a nano-In 2 o 3 Gas sensor and its preparation method, especially related to a kind of in-situ growth nano In on the surface of non-metallic mineral electrode substrate 2 o 3 room temperature NO 2 Sensors and methods of preparation. Background technique
[0002] Nitrogen dioxide (NO 2 ) is a toxic and irritating gas emitted from automobile exhaust and industrial production processes, and is one of the main substances that form acid rain and photochemical smog pollution. Even 1ppm of NO 2 It will also cause great harm to the human body, so for low concentrations of NO 2 detection is extremely necessary. Metal oxide semiconductor gas sensors have been widely used in the detection of toxic and harmful gases because of their high sensitivity, online real-time monitoring, miniaturization, easy integration, and strong portability. Curr...