Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of diamond-copper composite material with high diamond volume fraction

A volume fraction, composite material technology, applied in the field of diamond/copper composite material preparation, can solve problems such as difficulty in mixing uniformly, and achieve the effects of easy control of process parameters, simple sintering process, and stable quality

Active Publication Date: 2019-10-11
安徽尚欣晶工新材料科技有限公司
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The higher the volume fraction of diamond in the composite material, the higher the thermal conductivity of the material and the lower the thermal expansion coefficient. However, due to the difference in surface roughness and density between diamond and copper powder, it has been difficult to find a suitable method to mix the two. uniform

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The surface modification of diamond in the present embodiment is carried out as follows:

[0038] Step 1: first carry out "removal of organic matter (ultrasonic 20min in acetone) → oil removal (ultrasonic 30min in 60 ℃ 10wt% NaOH) → coarsening (in 60 ℃ 10wt% HNO 3 Ultrasonic cleaning for 30 minutes)→drying (after cleaning with deionized water)" treatment. The treated diamonds are put into a vacuum drying oven to dry for later use;

[0039] Step 2: Mix the diamond obtained in step 1 and tungsten powder with a particle size of 2.5um in a volume ratio of 1:1 in an agate mortar;

[0040] Step 3: Take out the diamond obtained in step 2, and send it into a vacuum tube furnace for thermal diffusion treatment;

[0041] Step 4: Take the diamond in step 3, and separate the modified diamond and tungsten powder. The separated diamond and copper powder with a particle size of 70um are mixed evenly by wet grinding, and the volume fraction of diamond is 30%;

[0042] Step 5: The mi...

Embodiment 2

[0045] The surface modification of diamond in the present embodiment is carried out as follows:

[0046] Step 1: first carry out "removal of organic matter (ultrasonic 20min in acetone) → oil removal (ultrasonic 30min in 60 ℃ 10wt% NaOH) → coarsening (in 60 ℃ 10wt% HNO 3 Ultrasonic cleaning for 30 minutes)→drying (after cleaning with deionized water)" treatment. The treated diamonds are put into a vacuum drying oven to dry for later use;

[0047] Step 2: Mix the diamond obtained in step 1 and tungsten powder with a particle size of 2.5um in a volume ratio of 1:1 in an agate mortar;

[0048] Step 3: Take out the diamond obtained in step 2, and send it into a vacuum tube furnace for thermal diffusion treatment;

[0049] Step 4: Take the diamond in step 3, and separate the modified diamond and tungsten powder. The separated diamond and copper powder with a particle size of 70um are mixed evenly by wet grinding, and the volume fraction of diamond is 40%;

[0050] Step 5: The mi...

Embodiment 3

[0053] The surface modification of diamond in the present embodiment is carried out as follows:

[0054] Step 1: first carry out "removal of organic matter (ultrasonic 20min in acetone) → oil removal (ultrasonic 30min in 60 ℃ 10wt% NaOH) → coarsening (in 60 ℃ 10wt% HNO 3 Ultrasonic cleaning for 30 minutes)→drying (after cleaning with deionized water)" treatment. The treated diamonds are put into a vacuum drying oven to dry for later use;

[0055]Step 2: Mix the diamond obtained in step 1 and tungsten powder with a particle size of 2.5um in a volume ratio of 1:1 in an agate mortar;

[0056] Step 3: Take out the diamond obtained in step 2, and send it into a vacuum tube furnace for thermal diffusion treatment;

[0057] Step 4: Take the diamond in step 3, and separate the modified diamond and tungsten powder. The separated diamond and copper powder with a particle size of 70um are mixed evenly by wet grinding, and the diamond volume fraction is 60%;

[0058] Step 5: The mixed ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an SPS (spark plasma sintering) preparation method of a diamond-copper composite material with a high diamond volume fraction. Firstly, diamond is subjected to surface modification, and tungsten carbide is generated from tungsten and a part of carbonized diamond under the function of thermal diffusion and is attached to the surface of the diamond; next, the diamond and copper powder are mixed uniformly with a wet-grinding and mixing method; finally, sintering is carried out with an SPS technique and the diamond-copper composite material is formed. Compared with a composite material obtained through direct sintering of diamond and copper, the composite material has the characteristics of high thermal conductivity and low thermal expansion coefficient and can be usedfor a new generation of electronic packaging materials.

Description

technical field [0001] The invention relates to a method for preparing a high thermal conductivity composite material, in particular to a method for preparing a diamond / copper composite material with a high diamond volume fraction. Background technique [0002] With the continuous improvement of chip integration, electronic packaging is developing in the direction of miniaturization, light weight and high performance, which makes the operating temperature of the circuit continue to rise, and the heating rate per unit volume of the system continues to increase, resulting in unstable system operation. In order to obtain stable performance, heat dissipation conditions must be improved, so the importance of electronic packaging in the field of microelectronics is increasing, and the demand for new electronic packaging materials is also increasing. High-quality diamond is the material with the highest thermal conductivity known in the world, which can reach 2000W / (m·K), and it is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C22C26/00C22C9/00C22C1/05C22C1/10B22F3/105
CPCB22F3/105C22C1/051C22C9/00C22C26/00C22C2026/006
Inventor 张久兴胡梦园施加利金亚琴杨新宇潘亚飞
Owner 安徽尚欣晶工新材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com