Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Vinyl sulphone surface initiating aqueous phase anionic polymerization method

A technology of anionic polymerization and vinyl sulfone, which is applied in the field of anionic polymerization initiated on the surface of materials, and in the field of aqueous phase anionic polymerization initiated on the surface of vinyl sulfone, which can solve the complex preparation process of dithioesters, limited scope of application of substrates, and increased toxicity of polymers and other problems, to achieve the effect of less background reaction, easy operation, and less monomer loss

Active Publication Date: 2019-10-25
DALIAN UNIV OF TECH
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, RAFT also has many disadvantages: for example, dithioester derivatives may increase the toxicity of the polymer, and the preparation process of dithioester is more complicated, and it may also cause the polymer to have a certain color and odor
This type of reaction is mostly anionic / cationic polymerization, the reaction is highly controllable and has high solvent tolerance, but the scope of substrate application is relatively limited
Moreover, most of the existing surface-initiated polymerization reactions exist in the background reaction in the solution, resulting in monomer loss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vinyl sulphone surface initiating aqueous phase anionic polymerization method
  • Vinyl sulphone surface initiating aqueous phase anionic polymerization method
  • Vinyl sulphone surface initiating aqueous phase anionic polymerization method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Embodiment 1: take gold as substrate, prepare gold-polymethacrylic acid sulfobetaine (pSBMA) composite material

[0041] Cut the gold-plated silicon wafer into 1cm×1cm samples, treat the samples with UV / ozone for 30 minutes, ultrasonically clean them with ethanol for 3 times, and then immerse them in carbon dichloride of 11,11-divinyl sulfone undecyl disulfide compound Self-assembled in solution (1mmol / L) for 12 hours, washed three times with dichloromethane and then dried with nitrogen to prepare self-assembled membranes (VSSAMs) containing vinyl sulfone groups on the surface. Submerge the VSSAMs sample in sulfobetaine methacrylic acid (SBMA) monomer solution (100mmol / L, HEPES buffer containing 5mmol / L 1-methylimidazole), react at 37°C for 12h, take out the sample, and wash 3 times with water Then blow dry with nitrogen. Characterization using X-ray photoelectron spectroscopy (XPS), such as figure 1 shown. After the polymerization was initiated on the surface, the C...

Embodiment 2

[0042] Embodiment 2: take silicon chip as substrate, prepare silicon-polymethacrylic acid sulfobetaine (pSBMA) composite material

[0043] Place the silicon wafer in hot piranha washing solution (volume ratio of concentrated sulfuric acid: 30% hydrogen peroxide = 3:7) for 4 hours, ultrasonically clean it with ultrapure water for 3 times, and dry it with nitrogen to prepare a silicon wafer with hydroxyl groups on the surface. (Si-OH). Then place Si-OH in anhydrous toluene and add (3-mercaptopropyl)trimethoxysilane with a volume fraction of 3%. After ultrasonic cleaning for 2 times, the silicon wafer (Si-SH) with mercapto groups on the surface was prepared by drying with nitrogen gas. Then place Si-SH in divinyl sulfone solution (100mmol / L, HEPES buffer, pH8.0, containing 10% chromatographic acetonitrile to help dissolve), react at 25°C for 1 hour, wash with ultrapure water twice, nitrogen Blow dry to prepare a silicon wafer (Si-VS) containing vinyl sulfone groups on the surfa...

Embodiment 3

[0044] Example 3: Using gold as a substrate to prepare a gold-polydimethylacrylamide composite material

[0045] Cut the gold-plated silicon wafer into 1cm×1cm samples, treat the samples with UV / ozone for 30 minutes, ultrasonically clean them with ethanol for 3 times, and then immerse them in carbon dichloride of 11,11-divinyl sulfone undecyl disulfide compound Self-assembled in solution (1mmol / L) for 12 hours, washed three times with dichloromethane and then dried with nitrogen to prepare self-assembled membranes (VSSAMs) containing vinyl sulfone groups on the surface. Submerge the VSSAMs sample in N,N-dimethylacrylamide monomer solution (100mmol / L, HEPES buffer, containing 5mmol / L triethylenediamine), react at 37°C for 48h, take out the sample, wash it with water three times Blow dry with nitrogen. Characterization using infrared, such as Image 6 shown. After the polymerization is initiated on the surface, the characteristic peak corresponding to the polymer can be clear...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a vinyl sulphone surface initiating aqueous phase anionic polymerization method. The method comprises the steps that a material with vinyl sulphone group on the surface is immersed into an aqueous solution of a polymer monomer under the condition of a catalyst, the surface initiating anionic polymerization is achieved through a reaction at 25-100 DEG C for 1-72 h, and the polymer is bonded to the material surface through a covalent bond. According to the method, the range of application of substrates is wide; the reaction condition is mild, water and oxygen free operation is not needed, and the controllability is high; and the method is a great potential surface initiating anionic polymerization method.

Description

technical field [0001] The invention belongs to the field of preparation of inorganic-organic composites, in particular to a method for initiating anion polymerization on the surface of a material, in particular to a water-phase anion polymerization reaction initiated on the surface of vinyl sulfone. [0002] technical background [0003] Decorating the surface of materials with organic polymers is a general and effective surface modification method. There are two commonly used methods for grafting polymers on the surface of materials, one is the "grafting" method, that is, the polymer chains are chemically fixed on the surface of the material through specific functional groups; the other is the "surface grafting" method, that is, Polymerization is initiated via the surface. The former needs to introduce specific reactive functional groups into materials and polymer molecules, and considering the steric hindrance of polymer molecules, the grafting density is generally low. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C08F292/00C08F220/38C08F220/54C08F212/14
CPCC08F292/00C08F2438/03C08F220/54C08F212/14
Inventor 程昉刘冲王汉奇徐贺何炜
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com