Silicon nitride circuit substrate material and preparation method thereof

Abstract

The invention discloses a silicon nitride circuit substrate material and a preparation method thereof and belongs to the technical field of circuit substrate materials. The silicon nitride circuit substrate material is prepared from the following raw materials in parts by weight: 50-60 parts of silicon nitride, 15-25 parts of a carbon fiber, 5-8 parts of a dispersant, 6-10 parts of a surfactant, 10-15 parts of a sintering aid, 3-8 parts of a coupling agent and 160-200 parts of absolute ethyl alcohol. The silicon nitride circuit substrate material is prepared from silicon nitride and the carbonfiber as raw materials which are compounded with the dispersant, the surfactant, the sintering aid, the coupling agent and the like through process steps of mixing, soaking, stirring, spray granulation, compression molding, sintering, vacuum thermal treatment, and the like, and the material has good comprehensive properties; the bending strength is 23.2MPa or greater, the impact strength is 17.3KJ / cm<3>, the heat conduction coefficient is 95.8W / (m*K) or greater, and the heat conduction coefficient is up to 98.9W / (m*K) at most; and by adopting the process disclosed by the invention, the pass percent is up to 96.3%, the pass percent of the material is remarkably increased, the raw materials are saved, and the production cost can be lowered.

Description

technical field [0001] The invention relates to the technical field of circuit substrate materials, in particular to a silicon nitride circuit substrate material and a preparation method thereof. Background technique [0002] With the rapid development of my country's high-speed rail, aerospace, military and other fields, the demand for power electronic devices will also increase in the future. In order to adapt to more complex and harsh application conditions, power electronic devices are developing in the direction of high temperature, high frequency, low power consumption, intelligence, modularization, and systematization, which poses a severe challenge to the heat dissipation of the entire electronic device. The role of the substrate in the device is to absorb the heat generated by the chip and transfer it to the heat sink to achieve heat exchange with the outside world. Therefore, the preparation of high thermal conductivity substrate materials has become the key to the...

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Problems solved by technology

The heat dissipation material is produced by various raw materials such as ball milling, gelling, and sintering. The mechanical properties need to be improved, and the surface defects of the material are relatively serious, and the pass rate is low.

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