A kind of copper nitrogen iron antiperovskite structure room temperature soft magnetic thin film material and its preparation method

A technology of anti-perovskite and soft magnetic thin films, applied in the direction of magnetism of inorganic materials, can solve the problems of high preparation cost, inability to obtain copper nitrogen iron metal nitride room temperature soft magnetic thin film materials, and inability to obtain large-area thin films, etc., to achieve Less equipment, good for large-scale industrial production, wide application prospects

Active Publication Date: 2022-03-04
ANHUI SCI & TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To this end, people have made various attempts and efforts, such as using physical methods such as magnetron sputtering and pulsed laser deposition to prepare Fe-based metal nitride films, but due to the high preparation costs of these physical methods and the preparation technology itself The limitation of the film makes it impossible to obtain a large-area film. Therefore, in order to better study the physical properties and application prospects of the film, it is necessary to explore other low-cost and practical film preparation technologies.
At present, various preparation methods are unable to obtain copper nitrogen iron metal nitride room temperature soft magnetic thin film materials with anti-perovskite structure

Method used

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  • A kind of copper nitrogen iron antiperovskite structure room temperature soft magnetic thin film material and its preparation method
  • A kind of copper nitrogen iron antiperovskite structure room temperature soft magnetic thin film material and its preparation method
  • A kind of copper nitrogen iron antiperovskite structure room temperature soft magnetic thin film material and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] (1) Weigh copper nitrate and ferric nitrate according to the molar ratio of copper and iron being 1:3, and simultaneously add copper nitrate and ferric nitrate to the ethylene glycol methyl ether solution at 70°C and stir until it is completely dissolved, Stir at room temperature for 6 h to obtain a precursor solution with a concentration of 0.2 mol / L.

[0029] (2) First apply the precursor solution to the substrate, wherein the coating is spin coating, the substrate is a semiconductor substrate silicon wafer, the rotational speed during spin coating is 4000r / min, the time is 30s, and heated at 150°C for 5min, The substrate covered with the gel film was obtained, and then the substrate covered with the gel film was pyrolyzed at 350° C. for 12 minutes to obtain the substrate covered with the thin film.

[0030] (3) After repeating the number of times of step 2 10 times, first place the obtained substrate covered with multi-layer film in an air atmosphere at 850° C. for 1...

Embodiment 2

[0032] (1) According to the molar ratio of copper and iron being 1:3, weigh copper nitrate and ferric nitrate, add copper nitrate and ferric nitrate to the ethylene glycol methyl ether solution at 75°C and stir until it is completely dissolved, Stir at room temperature for 6.5 h to obtain a precursor solution with a concentration of 0.3 mol / L.

[0033] (2) Apply the precursor solution to the substrate first, wherein the coating is spin coating, the substrate is a semiconductor substrate silicon wafer, the rotational speed during spin coating is 5000r / min, the time is 20s, and the substrate is a semiconductor substrate silicon wafer, Heating at 170° C. for 4 minutes to obtain a substrate covered with a gel film, and then placing the substrate covered with a gel film at 370° C. for 11 minutes to obtain a substrate covered with a thin film.

[0034] (3) After repeating the number of times of step 2 for 9 times, first place the obtained substrate covered with multi-layer film in a...

Embodiment 3

[0036] (1) According to the molar ratio of copper and iron being 1:3, weigh copper nitrate and ferric nitrate, and simultaneously add copper nitrate and ferric nitrate to the ethylene glycol methyl ether solution at 80°C and stir until it is completely dissolved, Stir at room temperature for 7 hours to obtain a precursor solution with a concentration of 0.4 mol / L.

[0037] (2) Apply the precursor solution to the substrate first, wherein the coating is spin coating, the substrate is a semiconductor substrate silicon wafer, the rotational speed during spin coating is 6000r / min, the time is 10s, and the substrate is a semiconductor substrate silicon wafer, Heating at 200° C. for 3 minutes to obtain a substrate covered with a gel film, and then placing the substrate covered with a gel film at 400° C. for 10 minutes to obtain a substrate covered with a thin film.

[0038] (3) After repeating the number of times of step 2 for 8 times, first place the obtained substrate covered with ...

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Abstract

The invention discloses a copper-nitrogen-iron anti-perovskite structure room temperature soft magnetic thin film material and a preparation method thereof, which relate to the technical field of thin film materials and are composed of copper, iron and nitrogen elements. The chemical formula of the thin film is CuNFe 3 , Cu is copper, Fe is iron, N is nitrogen, and the thickness of the film is more than or equal to 200nm. The film is composed of densely arranged particles, and the particle size is 50-100nm; CuNFe with perovskite structure 3 The target product also makes the target product have a larger saturation magnetization and a smaller temperature coefficient of resistivity, so that it has broad application prospects and great potential in the fields of magnetism and microelectronics.

Description

Technical field: [0001] The invention relates to the technical field of thin film materials, in particular to a room temperature soft magnetic thin film material with copper nitrogen iron anti-perovskite structure and a preparation method thereof. Background technique: [0002] Metal nitrides usually have superior properties such as superhardness, high melting point, chemical inertness, and high thermal conductivity, and are widely used in many fields such as cutting tools, catalysts, lithium-ion batteries, and anti-corrosion coatings. Among the ternary metal nitrides, the most widely studied structure is the antiperovskite structure compound, whose general chemical formula is AXM 3 (A=Cu, Ag, Ga, Sn, Al, Zn, Ge, In and other elements; X=C, N, B and other elements; M=Sc, Ti, V, Cr, Mn, Fe, Co, Ni and other elements ). The non-metallic element X is located at the body-centered position, and the six M atoms at the face-centered position constitute XM 6 regular octahedron. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F1/36C04B35/58C04B35/622
CPCC04B35/58C04B35/62222H01F1/36C04B2235/3281C04B2235/3272C04B2235/6583C04B2235/656C04B2235/465C04B2235/76
Inventor 惠贞贞朱雪斌张晨嵩唐婧左绪忠叶龙强汪徐春
Owner ANHUI SCI & TECH UNIV
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