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Mg-doped antimony sulfide-based thin-film solar cell and preparation method thereof

A technology of solar cells and antimony sulfide, which is applied in the field of materials, can solve the problems of battery efficiency decline, unsatisfactory performance of thin-film solar cells, and short-circuit current loss, etc., to improve battery performance, reduce surface defects, and reduce impurities. Effect

Active Publication Date: 2019-11-15
CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY
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  • Description
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AI Technical Summary

Problems solved by technology

However, the Sb prepared by the spin-coating method 2 S 3 The performance of thin-film solar cells is still unsatisfactory, mainly because there are still some pinholes in the films prepared by spin-coating method, which lead to the loss of short-circuit current, resulting in a decrease in cell efficiency

Method used

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  • Mg-doped antimony sulfide-based thin-film solar cell and preparation method thereof
  • Mg-doped antimony sulfide-based thin-film solar cell and preparation method thereof
  • Mg-doped antimony sulfide-based thin-film solar cell and preparation method thereof

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preparation example Construction

[0035] The present invention also provides a method for preparing a thin-film solar cell based on Mg-doped antimony sulfide, comprising the following steps:

[0036] (1) Clean the oxide transparent conductive substrate and dry it;

[0037] (2) Preparation of the electron transport layer: the ZnO precursor sol was prepared by the sol-gel method, and the ZnO precursor sol was evenly spin-coated on the transparent conductive substrate, and then calcined in a muffle furnace to obtain the electron transport layer;

[0038] (3) Preparation of light-absorbing layer: Sb containing Mg element 2 S 3 The precursor liquid is spin-coated on the electron transport layer, and then heated to cause the solution to react to form Mg-doped Sb 2 S 3 Thin films; repeated spin-coating and heating reaction steps to tune the resulting Mg-doped Sb 2 S 3 The thickness of the film; and then in an inert gas environment, the Mg doped Sb was annealed 2 S 3 The film is crystallized to obtain an inorga...

Embodiment 1

[0051] A kind of Mg-doped Sb based on the present invention 2 S 3 Prepared thin film solar cell, its preparation steps are as follows:

[0052] (1) Substrate treatment: Clean the FTO conductive glass sheet with appropriate shape and size repeatedly with cleaning agent and then rinse it with tap water; Ultrasonic cleaning for 15 minutes, and finally drying in an oven at 100°C, to obtain a FTO conductive glass substrate with a clean surface.

[0053] (2) Preparation of electron transport layer: Dissolve 0.4M zinc acetate and ethanolamine in ethylene glycol methyl ether according to 1:1, stir well until the yellow sol of ZnO precursor is obtained, and then spin-coat the ZnO precursor liquid on On the FTO glass substrate, the forward rotation speed (low rotation speed) is 500r / min for 15s, the rear rotation speed (high rotation speed) is 3000r / min for 30s, and then the sample is dried on a hot stage at 80°C for 5min. To ensure the thickness of the ZnO film, the above process wa...

Embodiment 2

[0057] A kind of Mg-doped Sb based on the present invention 2 S 3 Prepared thin film solar cell, its preparation steps are as follows:

[0058] (1) Substrate treatment: same as in Example 1;

[0059] (2) Preparation of electron transport layer: same as Example 1;

[0060] (3) Preparation of light-absorbing layer: first dissolve 1.14g antimony chloride in 20ml ethylene glycol methyl ether, and stir at room temperature for 30 minutes; then add 0.38g thiourea into the solution of antimony chloride in ethylene glycol methyl ether, and continue Stir at room temperature for 30 minutes until a light yellow sol is obtained; then add 0.2 g of thioacetamide to the above yellow sol, and continue stirring for 30 minutes; then follow the molar doping ratio of Mg (ie, Mg / (Mg+Sb) is 3% ) to which anhydrous MgCl was added 2 , and stirred for 30min to obtain a precursor solution containing Mg element; the Sb prepared according to the doping ratio (the molar ratio of Mg and Sb) of 3% 2 S ...

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Abstract

The invention discloses a Mg-doped antimony sulfide-based thin-film solar cell, which sequentially comprises a transparent conductive substrate, an electron transport layer, a light absorption layer and a metal electrode from bottom to top. The light absorption layer is in the form of a Mg-doped antimony sulfide thin film. The invention also provides a preparation method of the Mg-doped antimony sulfide-based thin-film solar cell. The preparation method comprises the following steps: (1) cleaning and drying the oxide transparent conductive substrate; (2), preparing the electron transport layer; (3) preparing the light absorption layer: spin-coating the electron transport layer with the antimony sulfide precursor solution containing the Mg element, and heating to generate Mg-doped antimonysulfide; repeating the steps of spin coating and heating reaction to adjust the thickness of the Mg-doped antimony sulfide film; annealing in an inert gas environment to crystallize the Mg-doped antimony sulfide film to obtain an inorganic light absorption layer; (4) preparing the electrode. The thin-film solar cell is good in light absorption, high in cell short-circuit current and obviously improved in equipment conversion efficiency. The Mg-doped thin film is smoother, more uniform and more compact due to Mg doping, and recombination of carriers is reduced. The method is simple in raw material and process and low in equipment requirement.

Description

technical field [0001] The invention belongs to the technical field of materials, in particular to a Mg-Sb prepared by spin coating 2 S 3 A thin-film solar cell as a light-absorbing layer and a preparation method thereof. Background technique [0002] Earth-abundant, non-toxic thin-film solar cell technology is attracting widespread attention as an environmentally friendly and sustainable renewable energy source. As the power conversion efficiency (PCE) of silicon-based solar cells is approaching the practical limit, the adoption of low-cost thin-film solar cells has attracted increasing attention. Sb 2 S 3 With the advantages of bandgap matching, high absorption coefficient, single-phase stability, and favorable synthesis conditions, it is a promising candidate material for thin-film solar cells. Sb 2 S 3 material is a typical representative of emerging thin-film solar cells. A suitable Sb 2 S 3 The preparation method is the key to achieve high conversion efficien...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/0445H01L31/072H01L31/18
CPCH01L31/0321H01L31/072H01L31/18H01L31/0445Y02E10/50Y02P70/50
Inventor 陈建林刘壮彭卓寅刘宙张瑜赵武松黄才友陈荐
Owner CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY
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