Displacement Irradiation Resistance Method for Single Crystal Si Solar Cells Based on Substrate Deep Ion Implantation

Abstract

The invention relates to a method for anti-displacement irradiation of a single crystal Si solar cell based on deep-layer ion implantation of a substrate, belonging to the technical field of solar cell microelectronics. The invention aims at the problem that the existing solar cells will produce irradiation defects due to the irradiation of space charged particles, and then cause the degradation of the I-V characteristics of the solar cells. It determines the intended implantation position of ions according to the structural parameters of the original single crystal Si solar cell, and simulates and determines the energy and range of the ions according to the intended implantation position; then simulates the target I‑V change curve during the ion implantation process, when the target I‑V When the amount of change of the change curve is less than 10% of the I-V change curve of the original single crystal Si solar cell, record the ion implantation amount; then calculate the ion source voltage, ion beam current and ion implantation time of the ion implanter; set the ion implanter, for The original single crystal Si solar cell is ion-implanted and annealed to realize the anti-displacement radiation reinforcement of the original single crystal Si solar cell. The invention is used for reinforcement of single crystal Si solar cells.

Description

technical field [0001] The invention relates to a single-crystal Si solar cell anti-displacement irradiation method based on substrate deep layer ion implantation, and belongs to the technical field of solar cell microelectronics. Background technique [0002] Monocrystalline Si solar cells are silicon-based solar cells with the highest photoelectric conversion efficiency. Compared with gallium arsenide (GaAs) solar cells with higher efficiency, they have the advantage of low cost and light weight, so they are widely used in low-cost small spacecraft power systems middle. At present, the preparation technology of monocrystalline silicon solar cells is basically mature, but with the rapid development of the aerospace industry, solar cells will face a more complex space service environment, which requires spacecraft space power systems to have a longer service time. Crystalline silicon solar cells cannot meet the requirements for use. Since the most important environmental f...

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Problems solved by technology

[0005] Aiming at the problem that existing solar cells will produce irradiation defects due to the irradiation of charged particles in space, which will further cause the degradation of I-V characteristics of solar cells, the present invention provides a single crystal Si solar cell anti-displacement irradiation method based on deep ion implantation of the substrate

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