A preparation method of organic solar cells based on dual-solvent sol-gel ZNO cathode buffer layer

Abstract

The invention relates to a method for preparing an organic solar cell based on a dual-solvent sol-gel ZnO cathode buffer layer. The preparation method of the ZnO cathode buffer layer is as follows: at room temperature, zinc acetate and ethanolamine are dissolved in limonene and dimethoxyethanol fully dissolved in the mixed solvent of , and then spin-coated on the pretreated glass substrate to form a film, and annealed to obtain the ZnO cathode buffer layer. The preparation method improves the uniformity and compactness of the cathode buffer layer.

Description

technical field [0001] The invention relates to the technical field of organic semiconductor thin-film solar cells, in particular to a method for preparing an organic solar cell based on a dual-solvent sol-gel ZnO cathode buffer layer. Background technique [0002] The rapid development of modern society is inseparable from energy, and the effective exploitation and utilization of energy has become an urgent problem to be solved. At present, most of the energy used in the world comes from the exploitation of fossil fuels, which mainly include oil, natural gas and coal. But on the one hand, these resources are non-renewable and limited, and on the other hand, the use of fossil energy will cause great environmental pollution, so finding new alternative energy has become an urgent problem for human beings to solve. Considering that solar energy is inexhaustible, inexhaustible, and non-polluting, scientists from all over the world regard the development and utilization of solar...

AI Technical Summary

Problems solved by technology

The ZnO cathode buffer layer prepared by the above traditional method has some defects: the ZnO precursor solution will always contain a lot of bubbles during the long-term stirring preparation process, and these bubbles are not conducive to the subsequent spin coating film formation; at the same time, the traditional process film formation The gap between the ZnO particles is large, the dispersion is uneven, and defects are easy to form, which leads to the obstruction of the transport and separation of carriers; further, the interface of the ZnO film formed by annealing is relatively rough, and even has small spots visible to the naked eye, making The device has a high probability of carrier recombination and a large interface contact resistance, which greatly reduces the ability of the device to capture sunlight and transmit photogenerated carriers, and inhibits the performance of the entire device.

Images