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Alkaline cleaning agent for integrated circuit wiring low-k dielectric material after polishing and cleaning method thereof

A technology of integrated circuit and cleaning agent, which is applied in the field of low-k dielectric cleaning agent and its cleaning after alkaline integrated circuit wiring polishing, which can solve problems such as k value change, destruction of copper surface morphology and chemical structure, electrochemical corrosion leakage current, etc.

Pending Publication Date: 2019-11-22
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If these pollutants cannot be removed, the quality and excellent rate of semiconductor devices will eventually be reduced
[0004] It is understood that the cleaning agents currently used after polishing are divided into two categories, one is acid cleaning agent, the main component is citric acid, etc., the surface adsorption layer is further peeled off through chemical corrosion, but it is easy to cause electrochemical corrosion and serious leakage current. Destroying the surface morphology of copper and the chemical structure of low-k dielectric materials, especially porous media, changes the k value; the other is alkaline cleaning agents, such as tetramethylammonium hydroxide and tetraethylammonium hydroxide, etc. are often used. This type of substance can reduce the corrosion of copper by acidic polishing liquid, but it will also have a certain impact on low-k dielectric materials, changing the k value

Method used

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  • Alkaline cleaning agent for integrated circuit wiring low-k dielectric material after polishing and cleaning method thereof
  • Alkaline cleaning agent for integrated circuit wiring low-k dielectric material after polishing and cleaning method thereof
  • Alkaline cleaning agent for integrated circuit wiring low-k dielectric material after polishing and cleaning method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] 1. Cleaning agent preparation:

[0041] The fatty alcohol polyoxyethylene ether nonionic active agent AEO-9 is used. The preparation method is to dissolve the nonionic active agent in water at a mass ratio of 0.5% to deionized water, stir until completely dissolved, and add hexadecyldimethylsulfonate Propyl betaine, with a mass ratio of 0.5% to deionized water, after stirring to dissolve completely, add a pH regulator while stirring, the pH regulator is N,N-diethylhydroxylamine, and the amount is 2ml per liter Add it, and check the pH value while stirring. When the pH value reaches 10, stop adding the pH regulator and continue stirring for 0.5 minutes. After the stirring process is over, let it stand for use.

[0042] 2. Cleaning process:

[0043] Brushing machine process: PVA brushing process suitable for low-k dielectric materials:

[0044] Process parameters: Use a PVA chip brushing machine for cleaning, and the process parameters are set as:

[0045](1) The clean...

Embodiment 2

[0067] 1. Cleaning agent preparation:

[0068] Adopt fatty alcohol polyoxyethylene ether nonionic active agent O-20, the preparation method is to dissolve nonionic active agent in water, and deionized water mass ratio is 2%, stir until completely dissolved, add lauryl betaine, and The mass ratio of deionized water is 0.1%. After stirring until completely dissolved, a pH regulator is added during the stirring process. The pH regulator is ethylenediamine, which is added successively according to the amount of 1ml per liter each time, and the pH value is detected while stirring. When the pH value reaches 9.5, stop adding the pH regulator and continue stirring for 1 minute. After the stirring process is over, let it stand for use.

[0069] 2. Cleaning process:

[0070] Brushing machine process: PVA brushing process suitable for low-k dielectric materials:

[0071] Process parameters: Use a PVA chip brushing machine for cleaning, and the process parameters are set as:

[0072] (...

Embodiment 3

[0093] 1. Cleaning agent preparation:

[0094] The fatty alcohol polyoxyethylene ether nonionic active agent AEO-15 is used. The preparation method is to dissolve the nonionic active agent in water at a mass ratio of 0.3% to deionized water, stir until completely dissolved, and then add cetyl dimethyl The mass ratio of sulfopropyl betaine to deionized water is 0.5%, and the mass ratio of lauryl betaine to deionized water is 1%. After stirring until completely dissolved, add a pH regulator during the stirring process, the pH regulator is ammonia water, add successively according to the amount of 5ml per liter each time, detect the pH value while stirring, stop adding the pH regulator when the pH value reaches 9, Stir continuously for 1 minute, the stirring process is completed, and stand for use.

[0095] 2. Cleaning process:

[0096] Brushing machine process: PVA brushing process suitable for low-k dielectric materials:

[0097] Process parameters: Use a PVA chip brushing m...

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Abstract

The invention relates to an alkaline cleaning agent for an integrated circuit wiring low-k dielectric material after polishing and a cleaning method thereof. The cleaning agent is prepared from a nonionic surfactant, an amphoteric surfactant, a pH regulator and deionized water, wherein the mass of the nonionic surfactant is 0.3%-2% of the mass of water; the mass of the amphoteric surfactant is 0.1%-1.5% of the mass of the deionized water; the pH value of the cleaning agent is 9-10. According to the cleaning method, by setting the washing parameters and adding the steps of heating, drying and CVD treatment, the low-k dielectric material can be protected, the service lifetime of a brush is prolonged, the damaged part of the low-k material structure can be repaired, and recovery of the k value is achieved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a low-k dielectric cleaning agent after polishing of alkaline integrated circuit wiring and a cleaning method thereof. Background technique [0002] With the rapid development of the integrated circuit industry, the degree of integration is constantly increasing, the feature size is constantly decreasing, and the number of wiring layers of very large-scale integrated circuits is constantly increasing. In order to improve RC delay and reduce loss, the k value of the dielectric between copper wirings is usually reduced, and low-k materials are used as interlayer and intralayer dielectrics for Cu interconnection. BD is a commonly used low-k dielectric material. In order to further reduce the RC delay, the low-k medium adopts a porous dielectric material with a lower dielectric constant, which is called an ultra-low-k dielectric material, and the pores of the ultra-low...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/94C11D3/60C11D3/30C11D3/04B08B3/08B08B3/02B08B1/04
CPCC11D1/94C11D3/30C11D3/044B08B3/08B08B3/02C11D1/72C11D1/90C11D1/92B08B1/12B08B1/32C11D2111/44
Inventor 高宝红曲里京黄妍妍张保国何彦刚
Owner HEBEI UNIV OF TECH