1results about How to "Reduce mechanical force" patented technology

The invention discloses a cleaning method for a semiconductor photoetching mask substrate, and belongs to the technical field of semiconductor manufacturing. According to the method, dynamic cleaning logic of step cooperation and energy matching is adopted, and the steps of interface wetting and pre-cleaning, chemical soft interface construction, low-damage mechanical stripping and synchronous washing, targeted reaction clearing, microstructure deep cleaning, interface dehydration and modification and final energy-assisted drying are sequentially executed. The method is characterized in that through the dependency relationship of chemical interface softening and low-damage mechanical stripping in sequence, the rotation speed of a substrate in each step is strictly controlled to meet the specific dynamic relationship (V2 < V1 < V4 < V3 < V5 < V6), and precise cooperation of chemical action, physical stripping and energy field cleaning is achieved. The contradiction between efficiency and substrate damage in a traditional cleaning process is effectively solved, full-scale pollutants from micron-scale particles to nano-scale molecular contamination can be removed without dead corners, and a clean, stable and secondary pollution resistant surface state is actively reconstructed at a cleaning end point; and the cleanliness and the service life of the mask substrate and the yield of a downstream photoetching process are remarkably improved.