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Low-temperature-resistant high-resistance transparent conductive film and preparation method thereof

A transparent conductive film, low temperature resistant technology, used in equipment for manufacturing conductive/semiconducting layers, cable/conductor manufacturing, semiconductor/solid-state device manufacturing, etc. Safety and other issues, to achieve the effect of improving resistivity and light transmittance

Active Publication Date: 2019-12-03
乐清市泰博恒电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the storage or use temperature is too low (-30°C), the viscosity of the liquid crystal will increase, which will destroy the alignment layer of the display device, resulting in a decrease in the overall brightness of the liquid crystal display, a rapid decrease in contrast ratio, color fading, and prolonged image response time. Even when the screen cannot be displayed
Especially in areas with harsh winter conditions, when driving outdoors, it is very easy for the LCD screen of the car TV to fail, which affects driving safety

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A low-temperature-resistant high-resistance transparent conductive film, which mainly includes the following raw material components in parts by weight: 45 parts of modified graphene, 8 parts of ammonium tetrachlorozincate and 25 parts of polyallylamine hydrochloride Salt.

[0031] A method for preparing a low-temperature resistant and high-resistance transparent conductive film, the low-temperature resistant and high-resistance transparent conductive film mainly includes the following preparation steps:

[0032] (1) Mix graphene oxide and water at a mass ratio of 1:200, ultrasonically disperse at a frequency of 45 kHz for 80 minutes to obtain graphene oxide sol, and mix graphene oxide sol and dextran at a mass ratio of 30:5 , adjust the pH of the mixture of graphene oxide sol and dextran to 11 with ammonia water with a mass fraction of 18%, stir and react for 5 hours at a temperature of 60°C and a rotation speed of 300r / min, and then filter to obtain a filter residue. ...

Embodiment 2

[0039] A low-temperature-resistant and high-resistance transparent conductive film mainly includes the following raw material components in parts by weight: 45 parts of graphene, 8 parts of ammonium tetrachlorozincate and 25 parts of polyallylamine hydrochloride.

[0040]A method for preparing a low-temperature resistant and high-resistance transparent conductive film, the low-temperature resistant and high-resistance transparent conductive film mainly includes the following preparation steps:

[0041] (1) Mix graphene oxide and water at a mass ratio of 1:200, and ultrasonically disperse at a frequency of 45 kHz for 80 minutes to obtain a graphene oxide sol. Mix the graphene oxide sol and hydrazine hydrate at a mass ratio of 30:5, Use ammonia water with a mass fraction of 18% to adjust the pH of the mixture of graphene oxide sol and hydrazine hydrate to 11, stir and react for 5 hours at a temperature of 60°C and a rotation speed of 300r / min, and then filter to obtain a filter r...

Embodiment 3

[0048] A low-temperature-resistant and high-resistance transparent conductive film mainly includes the following raw material components in parts by weight: 45 parts of modified graphene and 25 parts of polyallylamine hydrochloride.

[0049] A method for preparing a low-temperature resistant and high-resistance transparent conductive film, the low-temperature resistant and high-resistance transparent conductive film mainly includes the following preparation steps:

[0050] (1) Mix graphene oxide and water at a mass ratio of 1:200, ultrasonically disperse at a frequency of 45 kHz for 80 minutes to obtain graphene oxide sol, and mix graphene oxide sol and dextran at a mass ratio of 30:5 , adjust the pH of the mixture of graphene oxide sol and dextran to 11 with ammonia water with a mass fraction of 18%, stir and react for 5 hours at a temperature of 60°C and a rotation speed of 300r / min, and then filter to obtain a filter residue. Dry at a temperature of 90°C for 2 hours;

[00...

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PUM

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Abstract

The invention discloses a low-temperature-resistant high-resistance transparent conductive film and a preparation method thereof, and relates to the technical field of transparent conductive thin filmmaterials. According to the invention, graphene oxide is first reduced by dextran to acquire modified graphene; a pretreated silicon wafer is immersed in a polyallylamine hydrochloride solution and an ammonium tetrachlorozincate solution to acquire a modified silicon wafer; the modified silicon wafer and the modified graphene are mixed and react under the action of a reducing agent to prepare a film-bearing silicon wafer; the film is peeled off; and drying is carried out to acquire the low-temperature-resistant high-resistance transparent conductive film. The low-temperature-resistant high-resistance transparent conductive film prepared by the invention has the advantages of good light transmittance and relatively high resistivity, and can be used well under low-temperature conditions.

Description

technical field [0001] The invention relates to the technical field of transparent conductive film materials, in particular to a low-temperature-resistant high-resistance transparent conductive film and a preparation method thereof. Background technique [0002] Liquid crystal is a special form of matter, which has both the birefringence characteristic of crystal and the fluidity of liquid. Liquid crystal display is a display device made by using liquid crystal molecules to change their optical properties under the action of an external electric field. It has different types and has been widely used in various displays. As an n-type semiconductor material, ITO film has high conductivity and high light transmittance, and is the most commonly used film material for liquid crystal displays. [0003] However, in practical applications, indium resources, the main component of ITO, are scarce. If the current consumption rate is used, the global indium resources will be exhausted ...

Claims

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Application Information

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IPC IPC(8): H01B1/04H01B5/00H01B13/00C01B32/184
CPCH01B13/0026H01L21/02697Y02P70/50
Inventor 史俊
Owner 乐清市泰博恒电子科技有限公司
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