The present invention discloses a current mirror type TFT-OLED display pixel unit circuit, which comprises four polysilicon TFT tubes T1, T2, T3 and T4, an organic light emitting diode (OLED) and a capacitor Cs, wherein, the tubes T3 and T4 are completely symmetrical and form a current mirror; the tubes T1 and T2 serve as switch tubes, and line scanning signals are put in the grids of the tubes T1 and T2 to control the on-off of data current; the capacitor Cs is used for storing display data in a voltage mode, and the voltage on both ends of the capacitor Cs is loaded to the grid of the tube T4 to drive OLED to emit light; and the polysilicon TFT tubes T1, T2, T3 and T4 are all P channel devices. The present invention also provides a preparation method for transversal crystallization or laser crystallization of a mirror image TFT tube with high quality. The current mirror type TFT-OLED display pixel unit circuit and the method of the invention can enhance the consistency and precision of device properties of the TFT tube which forms mirror image current and can improve the image response speed, the image gray level and the picture display quality of an OLED screen.