Gallium oxide-based solar-blind detector and preparation method thereof

Abstract

The invention provides a solar-blind photodetector and a preparation method thereof. The solar-blind photodetector comprises: a gallium oxide substrate containing a gallium oxide epitaxial layer; a source electrode and a drain electrode respectively form Schottky contacts with the gallium oxide substrate The silicon oxide passivation layer is formed on the gallium oxide substrate, the source and the drain; the groove in the gallium oxide substrate is opened from the silicon oxide passivation layer; the aluminum oxide layer is formed on the bottom of the groove and the groove Trench sidewalls; gates, over the aluminum oxide layer of the trench and over the silicon oxide passivation layer. The invention adopts a specific three-terminal structure, and the carrier concentration of the channel can be adjusted through the gate, so that the dark current of the device can be adjusted conveniently.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and further relates to a gallium oxide-based solar-blind detector and a preparation method of the gallium oxide-based solar-blind detector. Background technique [0002] Solar-blind refers to ultraviolet light with a wavelength range of 200-280nm. Solar-blind photodetectors have outstanding advantages such as small background interference, and have broad application prospects in the fields of warning and guidance. The band gap of gallium oxide directly corresponds to the solar blind band, and is a natural solar blind detection material. There are mainly the following parameters to characterize the performance of photodetectors: photoresponsivity, dark current, specific detectivity, response speed, and quantum efficiency. Due to the limitations of material quality and device structure, the performance of current gallium oxide-based solar-blind detectors is poor, which is not enough to meet...

AI Technical Summary

Problems solved by technology

Due to the limitation of material quality and device structure, the performance of current gallium oxide-based solar-blind detectors is poor, which is not enough to meet the needs of practical applications.

Existing gallium oxide-based solar-blind detectors usually use metal-semiconductor-metal (MSM) and Schottky junction (Schottky diode) two-terminal structures, but the dark current of the detectors with these two structures is generally large and the device fabrication Not adjustable after completion

In addition, metal-semiconductor-metal structure detectors cannot achieve high gain and large bandwidth at the same time, and the response speed of the device is slow

For Schottky detectors, metals with high work function are usually combined with gallium oxide to form a Schottky junction. The formed Schottky barrier can reduce the dark current of the device to a certain extent, and the built-in electric field can accelerate the current carrying. The collection of electrons, thereby improving the light response speed of the device, but the light responsivity of the sun-blind detector of this structure is usually low

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