Gallium oxide-based solar-blind detector and preparation method thereof

A gallium oxide and photodetector technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem that detectors cannot achieve high gain and large bandwidth at the same time, low photoresponsivity of solar-blind detectors, The problem of slow response speed of the device can achieve the effect of increasing the effective working area, super-light responsivity, and improving the response speed

Active Publication Date: 2021-07-09
UNIV OF SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the limitation of material quality and device structure, the performance of current gallium oxide-based solar-blind detectors is poor, which is not enough to meet the needs of practical applications.
Existing gallium oxide-based solar-blind detectors usually use metal-semiconductor-metal (MSM) and Schottky junction (Schottky diode) two-terminal structures, but the dark current of the detectors with these two structures is generally large and the device fabrication Not adjustable after completion
In addition, metal-semiconductor-metal structure detectors cannot achieve high gain and large bandwidth at the same time, and the response speed of the device is slow
For Schottky detectors, metals with high work function are usually combined with gallium oxide to form a Schottky junction. The formed Schottky barrier can reduce the dark current of the device to a certain extent, and the built-in electric field can accelerate the current carrying. The collection of electrons, thereby improving the light response speed of the device, but the light responsivity of the sun-blind detector of this structure is usually low

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  • Gallium oxide-based solar-blind detector and preparation method thereof
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  • Gallium oxide-based solar-blind detector and preparation method thereof

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preparation example Construction

[0043] Preparation of the layer The epitaxial layer can also be prepared by various other deposition or growth methods, including but not limited to methods such as MOCVD or PLD to obtain gallium oxide epitaxial films.

[0044] see figure 2 As shown, photolithographic patterning is used to isolate the device of the sample by reactive ion beam etching; the etching parameters can be: using Cl 2 / Ar gas for etching, where Cl 2 The flow rate was 15 sccm, the Ar flow rate was 5 sccm, the ICP (inductively coupled plasma) power was 400W, and the RF power was 200W.

[0045] see image 3 As shown, using a standard photolithographic lift-off process, the source and drain electrodes are deposited by electron beam evaporation, and the metals used are platinum / titanium / gold, and gallium oxide (Ga 2 o 3) to form a Schottky contact, the electrode thicknesses are 40nm / 10nm / 50nm respectively; the thickness range of platinum is 10-60nm, the thickness range of titanium is 5-20nm, and the th...

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Abstract

The invention provides a solar-blind photodetector and a preparation method thereof. The solar-blind photodetector comprises: a gallium oxide substrate containing a gallium oxide epitaxial layer; a source electrode and a drain electrode respectively form Schottky contacts with the gallium oxide substrate The silicon oxide passivation layer is formed on the gallium oxide substrate, the source and the drain; the groove in the gallium oxide substrate is opened from the silicon oxide passivation layer; the aluminum oxide layer is formed on the bottom of the groove and the groove Trench sidewalls; gates, over the aluminum oxide layer of the trench and over the silicon oxide passivation layer. The invention adopts a specific three-terminal structure, and the carrier concentration of the channel can be adjusted through the gate, so that the dark current of the device can be adjusted conveniently.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and further relates to a gallium oxide-based solar-blind detector and a preparation method of the gallium oxide-based solar-blind detector. Background technique [0002] Solar-blind refers to ultraviolet light with a wavelength range of 200-280nm. Solar-blind photodetectors have outstanding advantages such as small background interference, and have broad application prospects in the fields of warning and guidance. The band gap of gallium oxide directly corresponds to the solar blind band, and is a natural solar blind detection material. There are mainly the following parameters to characterize the performance of photodetectors: photoresponsivity, dark current, specific detectivity, response speed, and quantum efficiency. Due to the limitations of material quality and device structure, the performance of current gallium oxide-based solar-blind detectors is poor, which is not enough to meet...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/113H01L31/18
CPCH01L31/1136H01L31/18Y02P70/50
Inventor 龙世兵吴枫
Owner UNIV OF SCI & TECH OF CHINA
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