Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for growing gallium nitride on diamond substrate based on hexagonal boron nitride and aluminum nitride

A hexagonal boron nitride and diamond technology, applied in the field of microelectronics, can solve problems such as thermal mismatch, poor thermal conductivity, lack of transition layer, etc., to improve quality, reduce lattice mismatch, and reduce thermal mismatch Effect

Active Publication Date: 2021-09-28
XIDIAN UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the shortcomings of this method are: 1. There is lattice mismatch and thermal mismatch in the sapphire substrate, and the thermal conductivity is not very good
2. Lacking a transition layer, it is difficult to effectively alleviate the lattice mismatch between the substrate and GaN. Directly growing GaN thin films on the substrate will generate a large number of background carriers, which will affect the use in optoelectronic devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for growing gallium nitride on diamond substrate based on hexagonal boron nitride and aluminum nitride
  • Method for growing gallium nitride on diamond substrate based on hexagonal boron nitride and aluminum nitride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Embodiment 1: Fabricate a gallium nitride material with a thickness of a low-temperature gallium nitride layer of 200 nm and a thickness of a high-temperature gallium nitride layer of 2000 nm.

[0028] Step 1. Growing a diamond film on a silicon wafer to form a diamond substrate.

[0029] (1a) the silicon wafer is put into a hydrofluoric acid solution for cleaning to remove silicon dioxide on the surface;

[0030] (1b) Put the silicon chip into diamond powder of about 500nm and grind it for 10 minutes, and put it into the microwave plasma chemical vapor deposition MPCVD reaction chamber after ultrasonically cleaning with ethanol and acetone successively;

[0031] (1c) Vacuumize the microwave plasma chemical vapor deposition MPCVD reaction chamber, feed 1% hydrogen, turn on the microwave generator in the microwave plasma chemical vapor deposition MPCVD reaction chamber to generate plasma, and pretreat the surface of the silicon wafer for 10 minutes ;

[0032] (1d) feed...

Embodiment 2

[0056] Embodiment 2: Fabricate a gallium nitride material with a thickness of a low-temperature gallium nitride layer of 250 nm and a high-temperature gallium nitride layer of 2500 nm.

[0057] Step 1. Growing a diamond film on a silicon wafer to form a diamond substrate.

[0058] (1.1) silicon wafer is put into hydrofluoric acid solution and cleaned, and the silicon dioxide on the surface is removed;

[0059] (1.2) Put the silicon wafer into about 500nm diamond powder and grind it for 15 minutes, and put it into the microwave plasma chemical vapor deposition MPCVD reaction chamber after ultrasonically cleaning with ethanol and acetone in turn;

[0060] (1.3) Vacuumize the microwave plasma chemical vapor deposition MPCVD reaction chamber, feed 1% hydrogen, turn on the microwave generator in the microwave plasma chemical vapor deposition MPCVD reaction chamber to generate plasma, and pretreat the surface of the silicon wafer for 15 minutes ;

[0061] (1.4) Feed 5% methane int...

Embodiment 3

[0085] Embodiment 3: Fabricate a gallium nitride material with a thickness of a low-temperature gallium nitride layer of 300 nm and a high-temperature gallium nitride layer of 3000 nm.

[0086] Step A. growing a diamond film on a silicon wafer to form a diamond substrate.

[0087] Put the silicon wafer into hydrofluoric acid solution to clean first, remove the silicon dioxide on the surface; then put the silicon wafer into about 500nm diamond powder and grind it for 20 minutes, and then use ethanol and acetone to ultrasonically clean it, then put it into microwave plasma Bulk chemical vapor deposition MPCVD reaction chamber; vacuumize the microwave plasma chemical vapor deposition MPCVD reaction chamber, feed 1% hydrogen, turn on the microwave generator in the microwave plasma chemical vapor deposition MPCVD reaction chamber to generate plasma, Pretreat the surface of the silicon wafer for 10 minutes; then feed 5% methane into the reaction chamber, and under the condition of t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of microelectronics, in particular to a gallium nitride growth method, which mainly solves the problem of poor quality of epitaxially grown gallium nitride materials in the prior art. The realization scheme is: 1) grow diamond substrate by microwave plasma chemical vapor deposition MPCVD on silicon wafer; 2) grow hexagonal boron nitride transition layer on diamond substrate by metal organic chemical vapor deposition MOCVD method; 3 ) using photolithography and etching to pattern the hexagonal boron nitride transition layer; 4) using electrochemical deposition to deposit aluminum nitride on the patterned hexagonal boron nitride transition layer; 5) using metal organic chemical vapor deposition A low-temperature GaN layer and a high-temperature GaN layer are epitaxially grown sequentially on a diamond substrate covered with patterned hexagonal boron nitride and aluminum nitride by the cumulative MOCVD method. The invention improves the quality of the gallium nitride material and can be used for making gallium nitride thin films and devices thereof.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and further relates to a gallium nitride growth method, which can be used for making gallium nitride thin films and devices thereof. Background technique [0002] The third-generation semiconductors represented by gallium nitride have the advantages of large band gap, high breakdown field strength, high thermal conductivity, corrosion resistance and radiation resistance, and are widely used in optoelectronic devices and electronic devices. However, due to the lattice mismatch and thermal mismatch between the GaN material and the substrate, GaN obtained by heteroepitaxy often has a high dislocation density, which limits the performance and reliability of GaN-based devices. . Therefore, growing GaN with low dislocation density and high quality is the key to making microwave power devices. [0003] Traditional heterogeneous epitaxial substrates, such as sapphire, silicon, and silicon carb...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02376H01L21/0254
Inventor 宁静刘起显王东张进成贾彦青闫朝超郝跃
Owner XIDIAN UNIV