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A kind of zns/sn/zno heterostructure film material and its preparation method and application

A thin film material and heterostructure technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of slow response speed, wide band gap, weak light absorption, etc., to achieve fast response speed, The effect of narrow band gap and small lattice mismatch

Active Publication Date: 2021-10-29
KUNMING UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] However, the existing multilayer 2D heterostructures still have the problems of weak light absorption, wide bandgap, and slow response under visible light irradiation.

Method used

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  • A kind of zns/sn/zno heterostructure film material and its preparation method and application
  • A kind of zns/sn/zno heterostructure film material and its preparation method and application
  • A kind of zns/sn/zno heterostructure film material and its preparation method and application

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preparation example Construction

[0035] The present invention provides a preparation method of the ZnS / Sn / ZnO heterostructure thin film material described in the above technical solution, comprising the following steps:

[0036] Using ZnO ceramics as the target material, the first sputtering is carried out on the substrate to obtain ZnO thin film;

[0037] performing a first annealing treatment on the ZnO film in an air atmosphere, and performing sulfuration annealing on the obtained film in a sulfide gas to obtain a ZnS film;

[0038] Using the ZnS thin film as a substrate, and using single crystal Sn as a target, sequentially performing a second sputtering and a second annealing treatment to obtain a ZnS / Sn thin film;

[0039] Using the ZnS / Sn thin film as the substrate and ZnO ceramics as the target material, the third sputtering and the third annealing treatment are performed in sequence to obtain the ZnS / Sn / ZnO thin film material.

[0040] In the present invention, unless otherwise specified, the requir...

Embodiment 1

[0051] The quartz plate substrate was ultrasonically cleaned in acetone (purity 99%) for 25min, then rinsed with deionized water, then ultrasonically cleaned in high-purity ethanol (purity 99.9%) for 25min, then rinsed with deionized water, and placed in ethanol stand-by;

[0052] Preparation of ZnS thin film: use ZnO ceramics as the target material, carry out the first sputtering on the above-mentioned cleaned quartz sheet to obtain the ZnO thin film; then anneal the ZnO thin film in air; Anneal to get ZnS thin film; the specific sputter coating parameters are: the purity of ZnO ceramic target is 99.99%, the diameter and thickness of the target are 40mm and 3mm respectively; the sulfide gas is high-purity H 2 S, H 2 and N 2 mixed gas, H 2 S, H 2 and N 2 The gas flow ratio is 10:1:40; the vacuum degree is 0.5×10 -4 Pa; substrate temperature is 80°C, distance between target and substrate is 45mm; working pressure is 0.5Pa, sputtering power is 40W, deposition time is 35min...

Embodiment 2

[0057] The quartz plate substrate was ultrasonically cleaned in acetone (purity 99%) for 30min, then rinsed with deionized water, then ultrasonically cleaned in high-purity ethanol (purity 99.9%) for 30min, then rinsed with deionized water, and placed in ethanol stand-by;

[0058] Preparation of ZnS thin film: use ZnO ceramics as the target material, carry out the first sputtering on the above-mentioned cleaned quartz sheet to obtain the ZnO thin film; then anneal the ZnO thin film in air; Anneal to get ZnS thin film; the specific sputtering coating parameters are: the purity of ZnO ceramics is 99.99%, the diameter and thickness are 50mm and 4mm respectively; the sulfide gas is high-purity H 2 S, H 2 and N 2 mixed gas, H 2 S, H 2 and N 2 The gas flow ratio is 11:1:38; the vacuum degree is 1×10 -4 Pa; substrate temperature is 120°C, distance between target and substrate is 20mm; working pressure is 1Pa, sputtering power is 60W, deposition time is 40min; annealing time in ...

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Abstract

The invention belongs to the technical field of semiconductor thin film material preparation, and in particular relates to a ZnS / Sn / ZnO heterostructure thin film material and its preparation method and application. The ZnS / Sn / ZnO heterostructure thin film material provided by the invention comprises a substrate, a ZnS layer, a Sn layer and a ZnO layer which are sequentially stacked from bottom to top. The ZnS / Sn / ZnO heterostructure film provided by the present invention is composed of ZnS layer, Sn layer and ZnO layer arranged in sequence to form a sandwich structure, has excellent optical absorption capacity and its high light absorption coefficient is maintained until the visible light region (sub-intensity absorption peak is located at Visible light region); narrow bandgap, fast response. The lattice mismatch of ZnS, Sn and ZnO semiconductor materials used in the present invention is small, and the internal stress and defects of the obtained ZnS / Sn / ZnO heterostructure film material are small; and the ZnO dense film is used as the coating layer to protect the The inside is not easy to be oxidized, thus prolonging the service life of the film material.

Description

technical field [0001] The invention relates to the technical field of semiconductor thin film material preparation, in particular to a ZnS / Sn / ZnO heterostructure thin film material and its preparation method and application. Background technique [0002] Solar-driven photocatalytic water splitting into hydrogen has become one of the most attractive renewable energy technologies to solve energy crisis and environmental problems. However, finding ideal photocatalysts with relatively high activity, low cost, and long-term stability under visible light remains a great challenge for practical applications. [0003] So far, many efforts have been made to develop suitable semiconductor photocatalysts for efficient photocatalytic water splitting performance. Coupling multiple single materials to form a van der Waals (vdW) heterostructure is an effective way to improve the overall performance of materials. This approach has been used in graphene / GaAs, GaP / AlP, ZnS / ZnSe, MoS 2 / InP...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/08C23C14/18C23C14/34C23C14/58C25B11/091C25B1/04
CPCC23C14/0629C23C14/086C23C14/185C23C14/3464C23C14/5806C25B1/04C25B1/55C25B11/091Y02E60/36
Inventor 周晓龙郭艳欣熊爱虎詹放阴树标曹建春黎敬涛
Owner KUNMING UNIV OF SCI & TECH
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