Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing tapered light trapping structure with adjustable density on silicon surface and prepared black silicon

A light trapping structure, silicon surface technology, applied in chemical instruments and methods, crystal growth, electrical components, etc., can solve the problems of increasing raw material and process costs, unfavorable scale and batch preparation, and complex mixing methods and processes, and achieve the effect. Outstanding, low cost, low reflectivity effect

Active Publication Date: 2020-02-11
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A silicon dioxide photoresist mask requires the SiO 2 The particles are uniformly mixed in the photoresist, the mixing method is complex and difficult to operate, and SiO 2 Raw materials need to be obtained separately, which significantly increases the cost of raw materials and processes, which is not conducive to large-scale and batch preparation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing tapered light trapping structure with adjustable density on silicon surface and prepared black silicon
  • Method for preparing tapered light trapping structure with adjustable density on silicon surface and prepared black silicon
  • Method for preparing tapered light trapping structure with adjustable density on silicon surface and prepared black silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] (1) Oxygen plasma treatment on silicon wafer surface

[0061] Place the 4-inch silicon wafer in the SENTECH SI500 ICP etching system, pass through oxygen, and perform oxygen plasma treatment for 5 minutes.

[0062] (2) Plasma etching with high selectivity

[0063] The silicon wafer was placed in the Oxford Plasmalab System100 ICP180 etching machine, the temperature of the lower electrode loading table was set to -110 °C, and the gas SF 6 and O 2 , the flow rate is 30sccm and 10sccm, the pressure is 7.5mTorr, the power of the upper electrode is 300W, the power of the lower electrode is a low-frequency pulse power supply, the power is 5W, the frequency is 333Hz, the duty cycle of the pulse signal is 25%, the etching time is 2min, and black silicon is prepared. Finish.

[0064] Figure 4 It is the photo of the 4-inch black silicon object obtained in Example 1 of the present invention.

Embodiment 2

[0066] (1) Argon plasma treatment on the surface of silicon wafer

[0067] Place the 4-inch silicon wafer in the SENTECH SI500 ICP etching system, pass in argon gas, and perform argon plasma treatment for 1 minute, then take out the etching chamber and place it in the air for 15 minutes.

[0068] (2) Plasma etching with high selectivity

[0069] Place the silicon wafer in the Oxford Plasmalab System100 ICP180 etching machine, set the temperature of the lower electrode loading table to -120 ° C, and pass the gas SF 6 and O 2 , the flow rate is 35sccm and 16sccm, the pressure is 5mTorr, the power of the upper electrode is 400W, the power of the lower electrode is a low-frequency pulse power supply, the power is 7W, the frequency is 200Hz, the duty cycle of the pulse signal is 10%, the etching time is 4min, and the black silicon is prepared. .

Embodiment 3

[0071] (1) Oxygen plasma treatment on silicon wafer surface

[0072] A 4-inch silicon wafer was placed in an Oxford Plasmalab System100 ICP180 system, and oxygen and argon were introduced into it for plasma treatment for 10 minutes.

[0073] (2) Plasma etching with high selectivity

[0074] Place the silicon wafer in the chamber of the Oxford Plasmalab System100 ICP180 etching machine, set the temperature of the lower electrode platform to -80°C, feed gas SF6 and O2, the flow rates are 40sccm and 20sccm respectively, the pressure is 10mTorr, and the power of the upper electrode is 500W, the power of the lower electrode is a low-frequency pulse power supply, the power is 10W, the frequency is 500Hz, the duty cycle of the pulse signal is 50%, the etching time is 5min, and the black silicon is prepared.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
The average particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing a tapered light trapping structure with adjustable density on a silicon surface and prepared black silicon. The method includes: 1) processing the surface of a silicon wafer by using a plasma processing method so as to form a dotted discontinuous SiOx mask on the surface of the silicon wafer, wherein the processing time determines the density of theblack silicon tapered structure; 2) then performing plasma etching, namely preparing the tapered light trapping structure on the silicon surface, wherein the etching time determines the depth of the tapered structure. The method of the present invention can form black silicon with a good light absorption characteristic on the silicon wafer, and the light absorption characteristic can be adjusted separately by the density and the depth of the structure. In addition, the method has a simple process flow, low cost, and good repeatability, can directly prepare a large area of black silicon, has high preparation efficiency, and is suitable for batch production in actual production. The prepared black sliicon has excellent light absorption performance.

Description

technical field [0001] The invention relates to the field of micro-nano processing of semiconductor materials, and relates to a method for manufacturing a density-adjustable conical light-trapping structure on a silicon surface and the prepared black silicon. Background technique [0002] As a material with low reflection to light, black silicon can absorb almost all the light in the near ultraviolet to near infrared band, and has extensive and important applications in the fields of solar cells, photodetection and light-emitting devices. [0003] At present, the methods for preparing black silicon mainly include femtosecond laser scanning, chemical etching and plasma etching. Among them, the microstructure of the black silicon surface prepared by the femtosecond laser scanning method is relatively regular, but the equipment is expensive, the prepared black silicon area is small, the process is complicated, and the cost is high. Large-area black silicon can be prepared by c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0236H01L33/22C30B33/12
CPCC30B33/12H01L31/02366H01L33/22
Inventor 徐丽华褚卫国陈佩佩闫兰琴
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA