FM/FE/FM multi-iron heterojunction and magnetoelectric coupling sensor
A multi-ferrous heterojunction and ferroalloy technology, which is applied in the direction of using electromagnetic devices for magnetic field measurement, instrumentation, measurement of magnetic variables, etc., can solve the problems of decreased sensitivity and low sensitivity, and achieve the effect of high resonance frequency and high sensitivity measurement.
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Embodiment 1
[0028] An FM / FE / FM multiferroic heterojunction, comprising a positive pressure magnetic layer, a negative pressure magnetic layer and a piezoelectric layer between the two, the piezoelectric layer and the piezoelectric layer are narrow strips Single-layer structure, aspect ratio greater than 5, the positive pressure magnetic layer adopts Fe-Co-B thin strip with a thickness of 20-300 μm, Fe-Co-B thick film with a thickness of 1-10 μm, and amorphous soft magnetic strip with a thickness of 20-300 μm One of Metglas (Fe-Si-B), Terfenol-D, electrical soft iron 1J22, and Fe-Ga alloy; CoFe with a thickness of 20-300 μm is selected for the negative pressure magnetic layer 2 o 4 Thin ribbon, 1-10μm CoFe 2 o 4 Thick film, one of Sm-Nd-Fe alloys; the piezoelectric layer is used as the substrate, and its material is selected from lead titanate (PZT), lead magnesium niobate titanate (PMN-PT), niobium niobate with a thickness of 1 to 500 μm One of lead zinc titanate (PZN-PT), polyvinylide...
Embodiment 2
[0031] In general, the thickness of the piezoelectric layer is smaller than that of the piezoelectric layer. In order to obtain high magnetoelectric coupling performance, it is necessary to stack multiple piezoelectric layers to form a multilayer structure to achieve the matching of the thickness of the piezoelectric layer and the piezoelectric layer, and to optimize the magnetic field. electrical coupling coefficient.
[0032] A FM / FE / FM multiferroic heterojunction, comprising a positive pressure magnetic layer, a negative pressure magnetic layer and a piezoelectric layer between the two, the piezoelectric layer has a multilayer structure, a layer of a bulk structure The number of layers can be selected from 2-5 layers, and the number of layers of the film structure can be selected from 2-100 layers; the layers of the thick film structure are insulator Al 2 o 3 Segmentation; both the piezoelectric layer and the piezoelectric layer have a narrow strip structure, and the aspec...
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