FM/FE/FM multi-iron heterojunction and magnetoelectric coupling sensor

A multi-ferrous heterojunction and ferroalloy technology, which is applied in the direction of using electromagnetic devices for magnetic field measurement, instrumentation, measurement of magnetic variables, etc., can solve the problems of decreased sensitivity and low sensitivity, and achieve the effect of high resonance frequency and high sensitivity measurement.

Inactive Publication Date: 2020-02-14
QINGDAO UNIV
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Problems solved by technology

[0004] At present, when the magnetoelectric coupling sensor measures several kHz high-frequency magnetic fields, its sensitivity is as high as sub- However, due to the 1/f characteristic of noise, when measuring ultra-low frequency magnetic signal...

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  • FM/FE/FM multi-iron heterojunction and magnetoelectric coupling sensor
  • FM/FE/FM multi-iron heterojunction and magnetoelectric coupling sensor
  • FM/FE/FM multi-iron heterojunction and magnetoelectric coupling sensor

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Embodiment 1

[0028] An FM / FE / FM multiferroic heterojunction, comprising a positive pressure magnetic layer, a negative pressure magnetic layer and a piezoelectric layer between the two, the piezoelectric layer and the piezoelectric layer are narrow strips Single-layer structure, aspect ratio greater than 5, the positive pressure magnetic layer adopts Fe-Co-B thin strip with a thickness of 20-300 μm, Fe-Co-B thick film with a thickness of 1-10 μm, and amorphous soft magnetic strip with a thickness of 20-300 μm One of Metglas (Fe-Si-B), Terfenol-D, electrical soft iron 1J22, and Fe-Ga alloy; CoFe with a thickness of 20-300 μm is selected for the negative pressure magnetic layer 2 o 4 Thin ribbon, 1-10μm CoFe 2 o 4 Thick film, one of Sm-Nd-Fe alloys; the piezoelectric layer is used as the substrate, and its material is selected from lead titanate (PZT), lead magnesium niobate titanate (PMN-PT), niobium niobate with a thickness of 1 to 500 μm One of lead zinc titanate (PZN-PT), polyvinylide...

Embodiment 2

[0031] In general, the thickness of the piezoelectric layer is smaller than that of the piezoelectric layer. In order to obtain high magnetoelectric coupling performance, it is necessary to stack multiple piezoelectric layers to form a multilayer structure to achieve the matching of the thickness of the piezoelectric layer and the piezoelectric layer, and to optimize the magnetic field. electrical coupling coefficient.

[0032] A FM / FE / FM multiferroic heterojunction, comprising a positive pressure magnetic layer, a negative pressure magnetic layer and a piezoelectric layer between the two, the piezoelectric layer has a multilayer structure, a layer of a bulk structure The number of layers can be selected from 2-5 layers, and the number of layers of the film structure can be selected from 2-100 layers; the layers of the thick film structure are insulator Al 2 o 3 Segmentation; both the piezoelectric layer and the piezoelectric layer have a narrow strip structure, and the aspec...

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Abstract

The invention belongs to the technical field of weak magnetic field detection, and provides an FM/FE/FM multi-iron heterojunction and a sensor. A piezomagnetic material with opposite saturation magnetostriction coefficients is selected, a positive pressure magnetic layer and a negative pressure magnetic layer are reasonably designed, the material of the positive pressure magnetic layer is selectedfrom at least one of Fe-Co-B alloy, amorphous soft magnetic strips, electrical soft iron, rare earth-iron alloy and Fe-Ga alloy, and the material of the negative pressure magnetic layer is selected from at least one of CoFe2O4 and Sm-Nd-Fe alloy. The FM/FE/FM multi-iron heterojunction can generate bending motion along with the change of an alternating magnetic field in the vertical direction, traditional telescopic motion is changed, and the resonance frequency is remarkably reduced and meanwhile the FM/FE/FM multi-iron heterojunction has high magnetic field sensitivity. The bending mode magnetoelectric coupling sensor achieves high-sensitivity measurement of an ultralow-frequency weak magnetic field, and can be used in the fields of weak magnetic field detection, military, biomedical image and inspection, geophysical, geological and mineral resource exploration, nondestructive inspection and the like.

Description

technical field [0001] The invention belongs to the technical field of weak magnetic field detection, and relates to a bending type multiferroic heterojunction based on materials with positive and negative magnetostriction coefficients and an ultra-low frequency weak magnetic field magnetoelectric coupling sensor. Background technique [0002] Weak magnetic field detection technology is widely used in basic and cutting-edge science (physics, chemistry, cosmology, etc.), military affairs (such as aviation submarine exploration, unexploded bomb UXO search, inertial guidance, etc.), biomedicine (magnetoencephalography, magnetocardiography, etc.), Geophysics (geomagnetic model, geomagnetic anomalous magnetic field), resource exploration (iron ore, metal deposits, oil, etc.), non-destructive testing (aircraft body and wheel hub, etc.) and other fields are widely used. At present, the commonly used magnetic sensors mainly include Hall effect sensor, anisotropic magnetoresistance (...

Claims

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Application Information

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IPC IPC(8): G01R33/00G01R33/06H01L43/02H01L43/10
CPCG01R33/0011G01R33/06H10N50/80H10N50/85
Inventor 李山东李进明杜洪磊金哲俊李强
Owner QINGDAO UNIV
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