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Boron-doped carbon nano-tube film, preparation method and applications thereof

A carbon nanotube film, carbon nanotube technology, applied in carbon nanotubes, nanocarbons, chemical instruments and methods, etc., can solve problems such as time-consuming, complex process, and achieve simple process, low cost, and self-supporting. good effect

Inactive Publication Date: 2020-03-03
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the methods for compounding boron and carbon nanotubes mainly include template method, chemical vapor deposition method, and hydrothermal / solvothermal method combined with later heat treatment. The process is relatively complicated and time-consuming.

Method used

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  • Boron-doped carbon nano-tube film, preparation method and applications thereof
  • Boron-doped carbon nano-tube film, preparation method and applications thereof
  • Boron-doped carbon nano-tube film, preparation method and applications thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] (1) Completely seal the vertical CVD furnace, continuously feed 100 sccm of Ar to remove the air in the furnace, then raise the temperature of the vertical CVD furnace to 1150°C through the temperature controller, and keep it warm for 3 hours to prepare the subsequent carbon nanotube film The growth provides a constant temperature environment;

[0040] (2) Weigh ethanol, ferrocene, thiophene according to the mass ratio of 95:1.5:1, be mixed into solution, wherein ethanol is as carbon source, ferrocene is as catalyst, and thiophene is as promotor; Then on the basis of above-mentioned mixed solution Add 1wt.% boric acid as the boron source for the reaction, and disperse the above solution by ultrasonic for 30 minutes at a temperature of 50°C to obtain a uniform dispersion and transfer it to a syringe as a precursor solution;

[0041] (3) After steps (1) and (2) are completed, close Ar, and continuously feed 800 sccm of H 2 As a reagent gas up to H 2 Fill the entire furn...

Embodiment 2

[0044] (1) Completely seal the vertical CVD furnace, continuously feed 100 sccm of Ar to remove the air in the furnace, then raise the temperature of the vertical CVD furnace to 1150°C through the temperature controller, and keep it warm for 3 hours to prepare the subsequent carbon nanotube film The growth provides a constant temperature environment;

[0045](2) Weigh ethanol, ferrocene, thiophene according to the mass ratio of 95:1.5:1, be mixed into solution, wherein ethanol is as carbon source, ferrocene is as catalyst, and thiophene is as promotor; Then on the basis of above-mentioned mixed solution Add 2wt.% boric acid as the boron source for the reaction, and disperse the above solution by ultrasonic for 30 minutes at a temperature of 50°C to obtain a uniform dispersion and transfer it to a syringe as a precursor solution;

[0046] (3) After steps (1) and (2) are completed, close Ar, and continuously feed 800 sccm of H 2 As a reagent gas up to H 2 Fill the entire furna...

Embodiment 3

[0049] (1) Completely seal the vertical CVD furnace, continuously feed 100 sccm of Ar to remove the air in the furnace, then raise the temperature of the vertical CVD furnace to 1150°C through the temperature controller, and keep it warm for 3 hours to prepare the subsequent carbon nanotube film The growth provides a constant temperature environment;

[0050] (2) Weigh ethanol, ferrocene, thiophene according to the mass ratio of 95:1.5:1, be mixed into solution, wherein ethanol is as carbon source, ferrocene is as catalyst, and thiophene is as promotor; Then on the basis of above-mentioned mixed solution Add 3wt.% boric acid as the boron source for the reaction, and disperse the above solution by ultrasonic for 30 minutes at a temperature of 50°C to obtain a uniform dispersion and transfer it to a syringe as a precursor solution;

[0051] (3) After steps (1) and (2) are completed, close Ar, and continuously feed 800 sccm of H 2 As a reagent gas up to H 2 Fill the entire furn...

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Abstract

The invention discloses a boron-doped carbon nano-tube film, a preparation method and applications thereof. The preparation method comprises the following steps: 1) weighing ethanol, ferrocene and thiophene according to a mass ratio of (90-100):(1.3-1.7):(0.5-1.5) to obtain a mixed solution, adding boric acid accounting for 1-3 wt% of the mixed solution into the mixed solution, and uniformly dispersing at 40-60 DEG C to obtain a precursor solution; 2) completely sealing a CVD furnace, continuously introducing 100-200 sccm of Ar to remove air in the furnace, adjusting the temperature of the CVDfurnace to 1100-1200 DEG C, and keeping the temperature for 2-5 h to provide a constant-temperature environment for subsequent growth of a carbon nano-tube film; 3) closing Ar, continuously introducing 700-900 sccm of H2 as a reaction gas until the whole hearth is filled with H2, injecting the precursor solution obtained in the step 1 into the furnace in a uniformly-dispersed mist liquid dropletmode at a liquid injection rate of 8-15 mL / h through an ultrasonic atomization device, and after 10-30 min, obtaining a boron-doped carbon nano-tube film at the bottom of the hearth, wherein the massspecific capacitance can reach up to 65.6 F / g.

Description

technical field [0001] The invention relates to the field of carbon nanotube-based thin film technology materials, in particular to a boron-doped carbon nanotube thin film and its preparation method and application. Background technique [0002] As a unique one-dimensional material, carbon nanotubes have excellent electrical conductivity and good ion and electron transport capabilities, and are widely used in the preparation of electrochemically modified electrodes. However, when carbon nanotubes are directly used as anode materials, there are still shortcomings, mainly manifested in large first-time irreversible capacity and potential hysteresis, which limit the practical application of carbon nanotubes. Heteroatom doping of carbon nanotubes can effectively control the crystal and electronic structure of carbon nanotubes and improve the electrochemical performance of pure carbon nanotubes. Among various doping elements, boron can activate the sp in the carbon structure bec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/162H01G11/36
CPCC01B32/162H01G11/36C01B2202/36C01B2202/22Y02E60/13
Inventor 侯峰王磊郭文磊
Owner TIANJIN UNIV
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