Boron-doped diamond/graphite composite electrode, preparation method, and double-cell reactor

A boron-doped diamond and composite electrode technology, which is applied in the field of new functional thin film materials, can solve problems such as large differences in thermal expansion coefficients, damage to normal use of equipment, and easy to contaminate chambers, etc., to improve the bonding force of the film base, strengthen the mechanical lock and The effect of improving the binding force of the membrane base

Inactive Publication Date: 2020-03-10
EZHOU JINFENG SUPERHARD MATERIALS CO LTD
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, some people add tungsten carbon compounds to the boron-doped diamond / graphite composite electrode to reduce the etching effect of active hydrogen ions on the substrate graphite in the process of chemical vapor deposition to prepare boron-doped diamonds. But tungsten carbon compounds and boron-doped diamond and graphite The thermal expansion coefficient of the tungsten has a large difference, and it is still easy to cause the film to fall off under the action of residual stress. Secondly, the tungsten source is easy to pollute the chamber, block the pipeline, and destroy the normal use of the equipment.

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  • Boron-doped diamond/graphite composite electrode, preparation method, and double-cell reactor
  • Boron-doped diamond/graphite composite electrode, preparation method, and double-cell reactor

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preparation example Construction

[0030] Please refer to figure 2 , a method for preparing a boron-doped diamond / graphite composite electrode provided in an embodiment of the present invention, comprising the following steps:

[0031] Step 1: Take the graphite substrate 1, and after sandblasting the graphite substrate 1, deposit a silicon-carbon compound layer 2 on the surface of the graphite substrate 1 to obtain a graphite substrate 1 with a silicon-carbon compound layer 2 on the surface;

[0032] Step 2: Carry out a diamond planting operation on the graphite substrate 1 with a silicon carbide layer 2 on the surface, and then deposit a boron-doped diamond layer 3 on the surface of the silicon carbide layer 2 to obtain a boron-doped diamond / graphite composite electrode.

[0033]In the preparation method provided by the embodiment of the present invention, firstly, the surface of the electrode is roughened by sandblasting pretreatment, which further enhances the mechanical lock and effect between the graphite...

Embodiment 1

[0044] A preparation method of boron-doped diamond / graphite composite electrode, comprising the following steps:

[0045] Step 1: Take the graphite substrate, place the graphite substrate in a sandblasting machine for wet sandblasting. Among them, the sand particles are silicon carbide, the particle size of the sand particles is 50μm, the pressure of the spray gun is 2bar, and the sandblasting is until the surface is rough, and finally Rinse with deionized water and blow dry with nitrogen.

[0046] The silicon carbide layer is deposited on the surface of the sandblasted graphite substrate by magnetron sputtering. During the deposition process, the graphite substrate is firstly cleaned by glow cleaning and ion etching. Among them, the specific operation of the glow cleaning is as follows: argon gas with a flow rate of 300 sccm is introduced, the negative bias voltage of the graphite substrate is 500 V, the cleaning pressure is 1.0 Pa, and the cleaning time is 30 minutes. The s...

Embodiment 2

[0050] A preparation method of boron-doped diamond / graphite composite electrode, comprising the following steps:

[0051] Step 1: Take the graphite substrate, place the graphite substrate in a sandblasting machine for wet sandblasting. Wherein, the sand particles are aluminum oxide, the particle size of the sand particles is 100 μm, the pressure of the spray gun is 4 bar, and the sand is blasted until the surface is rough, and finally cleaned with deionized water and dried with nitrogen. The silicon carbide layer is deposited on the surface of the sandblasted graphite substrate by magnetron sputtering. During the deposition process, the graphite substrate is firstly cleaned by glow cleaning and ion etching. Among them, the specific operation of glow cleaning is: argon gas with a flow rate of 500 sccm is introduced, the negative bias voltage of the graphite substrate is 800 V, the cleaning pressure is 1.7 Pa, and the cleaning time is 10 minutes. The specific operation of ion e...

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Abstract

The invention provides a boron-doped diamond/graphite composite electrode including a graphite substrate and a silicon-carbon compound layer and a boron-doped diamond layer that are successively laminated on the graphite substrate; since the thermal expansion coefficient of the silicon-carbon compound is located between the thermal expansion coefficients of the graphite and the boron-doped diamond, the silicon-carbon compound, as a transition layer, can reduce the difference of the thermal expansion coefficients between the layers of the boron-doped diamond/graphite composite electrode, so that the influence on the film-substrate binding force due to thermal residual stress is finally reduced and the film-substrate binding force of the composite electrode is enhanced. The invention also provides a preparation method of the composite electrode, which is simple in process and low in cost; deposition of the silicon-carbon compound layer avoids pollution on the chamber, so that the processis great in industrial applicability.

Description

technical field [0001] The invention belongs to the technical field of new functional thin film materials, and specifically relates to a boron-doped diamond / graphite composite electrode, a preparation method, and a double-cell reactor. Background technique [0002] The electrochemical advanced oxidation method has attracted widespread attention from scholars due to its advantages of high energy consumption, low cost, and no secondary pollution in the treatment of high-concentration organic wastewater. The key to electrochemical advanced oxidation technology is to find a suitable electrode. The boron-doped diamond / graphite composite electrode has become an ideal choice for industrial electrodes because of its good electrochemical properties, low price, stable chemical properties, and high oxygen evolution overpotential. However, between boron-doped diamond and graphite matrix The binding force is one of the main factors affecting the service life of composite electrodes. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C02F1/461C02F1/467C02F1/46C02F1/72
CPCC02F1/46C02F1/46109C02F1/4672C02F1/72C02F2001/46138C02F2001/46147C02F2201/46105
Inventor 方海严春银翁佑发
Owner EZHOU JINFENG SUPERHARD MATERIALS CO LTD
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