Preparation method of Micro-LED
A chip and semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing capital expenditure and depreciation cost, and achieve the effect of low manufacturing cost, high color rendering index, and easy processing
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[0049] A kind of Micro-LED preparation method, comprises the following steps:
[0050] Step 1. On a glass substrate or an organic flexible substrate, inlay a driving circuit board composed of thin film transistors and storage capacitors;
[0051] Step 2. Mass transfer the white light semiconductor chips onto the glass substrate or the organic flexible substrate, and connect each white light chip to a driving circuit unit composed of a thin film transistor and a storage capacitor.
[0052] Step 3. Cover each white light semiconductor chip with red, green, and blue primary color filters in turn to form red, green, and blue primary color light, and every three white light semiconductor chips covered with red, green, and blue three primary color filters The chip constitutes a light-emitting pixel unit;
[0053] Step 4. Fasten the transparent upper substrate to complete the preparation of Micro-LED. Its structure is as follows Figure 6 shown. More preferably, in step 3, before ...
Embodiment 1
[0056] Such as figure 1 As shown, from bottom to top, at 150 °C, a punch-through barrier film (Ga 2 o 3 ), with a thickness of 3nm. Then continue to grow n-type ZnO material with a thickness of 300nm. Then continue to grow AZO material (aluminum-doped zinc oxide (ZnO) transparent conductive glass) as an n-type electrode with a thickness of 60nm. Then photolithography and then wet etching with 10% volume fraction of dilute phosphoric acid until the bottom punch-through barrier layer is reached. Then Ar ion reactive ion beam was used to etch through the barrier layer, the etching power was 100w, and the gas flow rate was 200 sccm. Then photolithography is performed on the n-region and the p-region respectively, and the shape of the electrode is etched, so that the size of the electrode is 5 μm×5 μm. A Cr / Au electrode is vapor-deposited on the p region as a p-type electrode, the thickness of Cr is 5nm (to form an ohmic contact), and the thickness of Au is 95nm (to reduce ele...
Embodiment 2
[0058] Such as figure 2 As shown, from bottom to top, at 300 °C, a punch-through barrier film (ZrO 2 ), with a thickness of 10nm. Then an n-type ZnO material is grown on the punch-through barrier film with a thickness of 600nm. Then continue to grow ITO material as an n-type electrode layer with a thickness of 400nm. One side of ZnO is bonded on the Al substrate coated with a thin layer of Ag, and the other side is peeled off the p-type GaN sapphire substrate or silicon substrate by laser scanning, and then photolithography is performed on the n-region and p-region respectively, so that The size of the electrode is 5μm×5μm, the n-region and the p-region are located on both sides of the device (one on the front and one on the back), and then a Cr / Au electrode is deposited on the p-region as a p-type electrode, and the thickness of Cr is 2nm (forming an ohmic contact). , the thickness of Au is 50nm (to reduce the electrode resistance). At this time, the basic structure of t...
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