Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is used in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices to achieve the effects of improving luminous efficiency, promoting transmission, and improving performance

Inactive Publication Date: 2020-03-31
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

TiO 2 It has similar properties to ZnO, has similar photoelectric performance, but has higher electron mobility than ZnO, and should also be used as an electron transport material, but it is rarely reported in QLED

Method used

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  • Quantum dot light-emitting diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Embodiment 1: The following uses titanium acetate, ethanol, sodium hydroxide, PFN, and ethanol as examples for detailed introduction.

[0054] Add appropriate amount of titanium acetate to 50ml ethanol to form a concentration of 0.5M titanium acetate solution, at 70 o Stir to dissolve at C; dissolve sodium hydroxide in 10ml ethanol to form a sodium hydroxide solution, add sodium hydroxide solution to the titanium acetate solution (the molar ratio of sodium hydroxide to titanium ions is 4:1, pH=12), Continue stirring at 70°C for 4 h to form Ti(OH) 4 solution.

[0055] Subsequently, an appropriate amount of PFN was dissolved in ethanol to form a 1.5 mg / ml PFN solution.

[0056] Finally, on the treated substrate, Ti(OH) 4 The solution was spin-coated with a coater and heated at 250 o C annealed to form TiO 2 layer; and drop the PFN solution onto the TiO 2 layer, and at 100 o C annealed to form a film to form TiO 2 layer / PFN layer stack structure.

Embodiment 2

[0057] Embodiment 2: The following takes titanium nitrate, methanol, potassium hydroxide, PFN, and methanol as examples for detailed introduction.

[0058] An appropriate amount of titanium nitrate was added to 50ml of methanol to form a concentration of 0.5M titanium nitrate solution, at 60 o Stir and dissolve under C; dissolve potassium hydroxide in 10ml methanol to form sodium hydroxide solution, add sodium hydroxide solution to titanium nitrate solution (the molar ratio of potassium hydroxide to titanium ions is 4:1, pH=12), Continue stirring at 60°C for 4h to form Ti(OH) 4 solution.

[0059] Subsequently, an appropriate amount of PFN was dissolved in methanol to form a 1.5 mg / ml PFN solution.

[0060] Finally, on the treated substrate, Ti(OH) 4 The solution was spin-coated with a coater and heated at 250 o C annealed to form TiO 2 layer; and drop the PFN solution onto the TiO 2 layer, and at 100 o C annealed to form a film to form TiO 2 layer / PFN layer stack struc...

Embodiment 3

[0061] Embodiment 3: The following uses titanium chloride, propanol, lithium hydroxide, PFN, and propanol as examples for detailed introduction.

[0062] Add an appropriate amount of titanium chloride to 50 ml of propanol to form a titanium chloride solution with a concentration of 0.5 M, at 80 o C under stirring to dissolve. Dissolve lithium hydroxide in 10 ml propanol to form a lithium hydroxide solution, add lithium hydroxide solution to the titanium chloride solution (the molar ratio of lithium hydroxide to titanium ions is 4:1, pH=12), and continue to Stir at 80°C for 4 h to form Ti(OH) 4 solution.

[0063] Subsequently, an appropriate amount of PFN was dissolved in propanol to form a 1.5 mg / ml PFN solution.

[0064] Finally, on the treated substrate, Ti(OH) 4 The solution was spin-coated with a coater and heated at 250 oC annealed to form TiO 2 layer; and drop the PFN solution onto the TiO 2 layer, and at 100 oC Annealed to form a film to form TiO 2 layer / PFN la...

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Abstract

The invention discloses a quantum dot light emitting diode and a preparation method thereof. The quantum dot light emitting diode comprises a quantum dot substrate and a quantum dot layer, a laminatedlayer arranged therebetween, wherein the laminated layer comprises a quantum dot light-emitting layer, an electron transport layer and a poly [9, 10-b] [1, 2, 4] triazole layer which are laminated; the quantum dot light-emitting layer is arranged close to the anode, the electron transport layer is arranged close to the cathode, and the poly [9, 9-dioctyl fluorene-9, 9-bis (N, N-dimethylaminopropyl) fluorene] layer is arranged between the quantum dot light-emitting layer and the electron transport layer. According to the invention, a PEN layer can reduce the work function of the cathode, thereby leveling the energy levels of the cathode and the quantum dot light-emitting layer to form ohmic contact, promoting the transmission of electrons, improving the light-emitting efficiency of the quantum dot light-emitting diode, and improving the performance of the quantum dot light-emitting diode.

Description

technical field [0001] The invention relates to the field of quantum dot light emitting devices, in particular to a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] TiO 2 It is a widely used multifunctional material with a wide bandgap of 3.2eV. It has unique optical, electrical and physical properties, excellent chemical stability, and can resist electrochemical corrosion of the medium. It has been widely used in coatings, Cosmetics, semiconductors, sensors, dielectric materials, catalysts and other fields. TiO 2 It is an important wide bandgap indirect bandgap semiconductor material, widely used as a functional material for anode catalytic water splitting, solar cells and other photochemical and optoelectronic devices. [0003] In addition, titanium oxide (TiO 2 ), as a cheaper and more stable metal oxide, is widely used in the fields of electrode materials, gas-sensitive materials and supercapacitors, and can also be pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K30/865H10K50/115H10K50/16H10K71/00
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
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