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Polishing layer of chemical-mechanical polishing pad and application of polishing layer

A chemical mechanical and polishing layer technology, applied in the field of polishing layer, can solve the problems of polishing pad hardness, uneven density distribution, uneven distribution of polishing pad, resistance to hydrolysis, etc.

Active Publication Date: 2020-04-10
万华化学集团电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the selection of polyols, polyether polyols are preferred due to the consideration of hydrolysis resistance and elasticity, but the strength and wear resistance of the prepared polishing pads are slightly poor, and the service life of the polishing pads is short
Compared with polyether polyols, polyester polyols have stronger crystallinity due to having more strong polar groups, so the prepared polishing pads have higher hardness, mechanical strength and wear resistance; however , the polishing pad prepared with polyester polyol is not resistant to hydrolysis because of its polyester polyol (the polishing pad will contact the polishing liquid during the polishing process, and the main component of the polishing liquid is water), so the prepared polishing pad is also not resistant to hydrolysis. Once the polishing pad is hydrolyzed, its strength and wear resistance will drop sharply, directly affecting the polishing rate and polishing quality as well as the life of the polishing pad
In addition, due to the violent reaction between the isocyanate-terminated urethane prepolymer and the polyamine during curing, the gel time is short, so the formation of pores in the polishing pad will be unevenly distributed, resulting in hardness and density distribution of the polishing pad. Unevenness, affecting the polishing effect

Method used

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  • Polishing layer of chemical-mechanical polishing pad and application of polishing layer
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  • Polishing layer of chemical-mechanical polishing pad and application of polishing layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Isocyanate prepolymer component: Take 35 parts of TDI-100 (2,4-toluene diisocyanate), 60 parts of PlaccelT2205T (polyether ester polyol), 7 parts of DEG (diethylene glycol), react at 75 ° C for 2 hours Afterwards, the reactants were subjected to vacuum defoaming treatment to obtain prepolymer A1 with an NCO% of 8.0%.

[0053]Weigh 3g functional filler (expanded polymer hollow microspheres) 551DE40d42 and add it to the above-mentioned 100g isocyanate prepolymer A1, then add 43g curing agent Duracure C3LF, the stoichiometric ratio of NH2:NCO is 90%, at a mixing temperature of 55°C 1. Mix the mixture evenly at a rotating speed of 3500r / min, and pour it into a mold at 80°C, gel at room temperature for 15 minutes, then release the mold, and then perform secondary vulcanization at 100°C for 16 hours to obtain the polyurethane polishing layer N1.

[0054] figure 1 It is the scanning electron micrograph of the polished layer obtained in Example 1. It can be seen from the figu...

Embodiment 2

[0055] Embodiment 2 (compared with embodiment 1, change functional filler)

[0056] Isocyanate prepolymer component: Take 35 parts of TDI-100 (2,4-toluene diisocyanate), 60 parts of PlaccelT2205T (polyether ester polyol), 7 parts of DEG (diethylene glycol), react at 75 ° C for 2 hours Afterwards, the reactants were subjected to vacuum defoaming treatment to obtain prepolymer A1 with an NCO% of 8.0%.

[0057] Weigh 1.8g functional filler (expanded polymer hollow microspheres) 461DET40d25 and add it to the above-mentioned 100g isocyanate prepolymer A1, then add 43g curing agent Duracure C3LF, NH2: The stoichiometric ratio of NCO is 90%, at a mixing temperature of 55 Mix the mixture evenly at 3500r / min at a speed of 3500°C, and pour it into a mold at 80°C, gel at room temperature for 15 minutes and demould, and then perform secondary vulcanization at 100°C for 16 hours to obtain a polyurethane polishing layer N2.

Embodiment 3

[0059] Isocyanate prepolymer component: Take 35 parts of TDI-100 (2,4-toluene diisocyanate), 50 parts of PlaccelT2205T (polyether ester polyol), 8 parts of DEG (diethylene glycol), react at 75 ° C for 2 hours Afterwards, the reactants were subjected to vacuum defoaming treatment to obtain prepolymer A2 with an NCO% of 9.0%.

[0060] Weigh 3.7g functional filler (expanded polymer hollow microspheres) 551DE40d42 and add it to the above-mentioned 100g isocyanate prepolymer A2, then add 48g curing agent Duracure C3LF, NH2: The stoichiometric ratio of NCO is 90%, at a mixing temperature of 55 Mix the mixture evenly at 3500r / min at a speed of 3500°C, and pour it into a mold at 80°C, gel at room temperature for 15 minutes and demould, and then perform secondary vulcanization at 100°C for 16 hours to obtain the polyurethane polishing layer N3.

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Abstract

The invention provides a polishing layer of a chemical-mechanical polishing pad and application of the polishing layer. The polishing layer is prepared by the reaction of isocyanate prepolymer, a curing agent and functional filling; the isocyanate prepolymer is prepolymer prepared by the reaction of raw materials including diisocyanate, polyether ester polyol and optional small molecular polyol; the curing agent is dispersion liquid formed in dioctyl adipate by a complex of diamine compound and sodium chloride, wherein concentration of the complex is 40 wt%-50 wt%; and the functional filling is expanded polymer hollow microspheres. The polishing layer has higher mechanical strength and abrasive resistance while having high elasticity and hydrolysis resistance, so that the durability of thepolishing layer is good.

Description

technical field [0001] The present invention relates to polishing layers of polishing pads that can be used to polish and planarize substrates such as semiconductor substrates or magnetic disks. Background technique [0002] Semiconductor production typically includes some chemical mechanical planarization (CMP) process. During each CMP process, the polishing pad is planed together with a polishing fluid (eg, an abrasive-containing polishing slurry or an abrasive-free activating fluid) to remove excess material or maintain its planarity for subsequent acceptance of a new layer. The stack of these layers is brought together in such a way as to form an integrated circuit. The fabrication of these semiconductor devices is becoming increasingly complex due to the demand for devices with higher operating speeds, lower leakage currents, and lower power consumption. On the structural side of the device, this means finer geometry and metallization of features. These increasingly ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/24H01L21/306
CPCB24B37/24H01L21/30625
Inventor 罗建勋王凯方璞孙烨杨洗
Owner 万华化学集团电子材料有限公司
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