White-light LED based on perovskite electroluminescence and preparation method thereof

A perovskite, electroluminescence technology, applied in circuits, electrical components, electric solid devices, etc., can solve the problems of blue perovskite material shortage, limited development, low efficiency, etc., to avoid relatively low efficiency and avoid resources. Shortage, Solvent Solvent Erosion Effect

Active Publication Date: 2020-04-21
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] The blue-light perovskite materials required to prepare white light using methods a and c are in short supply and have relatively low efficiency. In addition, the lifespan of these materials is generally low, which limits its further development.

Method used

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  • White-light LED based on perovskite electroluminescence and preparation method thereof
  • White-light LED based on perovskite electroluminescence and preparation method thereof
  • White-light LED based on perovskite electroluminescence and preparation method thereof

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Embodiment 1

[0053] Such as figure 2 Shown is the structure of the device in this embodiment, from bottom to top: anode (ITO) / hole injection layer (PEDOT:PSS) / yellow light perovskite light-emitting layer (FAPbBr 2.1 I 0.9 ) / blue light polymer light-emitting layer and electron transport layer (PFSO) / electron injection layer (Ba) / cathode (Ag) with emission spectrum peak wavelength of 450nm.

[0054] The preparation process is:

[0055] (1) Put the ITO substrate used in tetrahydrofuran, isopropanol, alkaline cleaning agent and deionized water in sequence for ultrasonic cleaning. The time for ultrasonic cleaning in each liquid is 10 minutes. After the ultrasonic cleaning is completed, the ITO substrate Place it in an oven and dry it for later use; before the hole injection layer (PEDOT:PSS) is spin-coated, the ITO substrate used is subjected to O 2 -Plasma treatment to improve the wettability of PEDOT:PSS on ITO;

[0056](2) A layer of PEDOT:PSS with a thickness of 35nm was deposited as a...

Embodiment 2

[0061] Such as image 3 Shown is the device structure in the present embodiment, and it is successively from top to bottom: anode (graphene) / hole injection layer (NiO) / emission spectrum peak wavelength is the yellow light perovskite light-emitting layer (MAPbBr) of 580nm 1.8 I 1.2 ) / blue light polymer light-emitting layer and electron transport layer (PFO) / electron injection layer (LiF) / cathode (Al) with emission spectrum peak wavelength of 440nm.

[0062] The preparation process is:

[0063] (1) Place the graphene substrate used in tetrahydrofuran, isopropanol, alkaline cleaning agent and deionized water in sequence for ultrasonic cleaning. The time for ultrasonic cleaning in each liquid is 15 minutes. After the ultrasonic cleaning is completed, the substrate Place in the oven and dry for subsequent use; Before the spin-coated hole injection layer (NiO), the graphene substrate used was subjected to O 2 -Plasma treatment to improve the wettability of NiO on graphene.

[00...

Embodiment 3

[0069] Such as Figure 4 Shown is the device structure of the present embodiment, from top to bottom: anode (ITO) / hole injection layer (CuSCN) / emission spectrum peak wavelength is the yellow light perovskite light-emitting layer (CsPbBr) of 566nm 2.1 I 0.9 ) / blue light polymer light-emitting layer and electron transport layer (G0) / electron injection layer (Ca) / cathode (Al) with emission spectrum peak wavelength of 455nm.

[0070] The preparation process is:

[0071] (1) Put the ITO substrate used in tetrahydrofuran, isopropanol, alkaline cleaning agent and deionized water in sequence for ultrasonic cleaning. The time for ultrasonic cleaning in each liquid is 15 minutes. After the ultrasonic cleaning is completed, the ITO substrate Place it in an oven and dry it for later use; before spin-coating the hole injection layer (CuSCN), the ITO substrate used was subjected to O 2 -Plasma treatment to improve the wettability of NiO on graphene.

[0072] (2) Using a spin-coating pro...

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Abstract

The invention discloses a preparation method of a white-light LED based on perovskite electroluminescence. The method comprises the steps of (1) cleaning an anode, drying after the cleaning, and carrying out the pre-treatment on the dried anode; (2) depositing a hole injection layer by adopting a spin-coating process, and carrying out heat treatment; (3) preparing a yellow-light perovskite solution and a blue-light polymer solution, sequentially spin-coating a yellow-light perovskite layer and a blue-light polymer layer, and carrying out heat treatment after the spin coating of each layer, wherein the processed yellow-light perovskite layer and blue-light polymer layer form a light-emitting active layer; (4) transferring the device into a vacuum evaporation bin, and carrying out evaporation on an electron injection layer and a cathode; and (5) packaging the device with epoxy resin and a glass cover plate. The invention provides a new thought for realizing electroluminescent white light, that is, the white-light LED based on perovskite electroluminescence is prepared by adopting yellow light perovskite and a blue light polymer, and the electroluminescence spectrum of the white-lightLED can cover the whole visible light region.

Description

technical field [0001] The invention relates to the technical field of optical display, in particular to a perovskite electroluminescent white LED and a preparation method thereof. Background technique [0002] White light display (illumination) is an important research topic in the field of optics, because white light lighting is ubiquitous and has broad application prospects. The improvement of the efficiency of white light lighting materials can save tens of thousands of energy for the world every year. [0003] In recent years, organic-inorganic hybrid perovskite materials have high absorption coefficient, high and balanced electron and hole mobility, high defect tolerance, adjustable band gap, and adjustable exciton binding energy. The superior optoelectronic and physical properties such as tunability and nanostructure tunability have attracted much attention, and the perovskite structure can be simply constructed into polycrystalline thin films by solution processing w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/00H10K50/11H10K71/00
Inventor 王坚俞丹牡王娟红麦超晃李妙姿黎佳立寸阳珂张斌斌
Owner SOUTH CHINA UNIV OF TECH
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