Transistor with embedded source and drain and preparation method of transistor

Abstract

The invention provides a transistor with embedded source and drain and a preparation method of the transistor The transistor structurally comprises a weak p-type doped silicon substrate 1, trench isolation regions 2 embedded into the two end parts of the silicon substrate 1, a heavy N-type doped drain 4 and a heavy N-type doped source 5 embedded into the vicinity of the two end parts of the silicon substrate 1 respectively, a gate oxide layer 6 positioned on the silicon substrate 1, a grid electrode 7 positioned on the gate oxide layer 6, a gate contact 12 on the gate 7, and a side wall 8 positioned on the side surface of the grid 7. Embedded gallium nitride is introduced into the drain electrode, and the withstand voltage of the transistor is greatly improved by means of the wide bandgapcharacteristic of gallium nitride. Compared with the traditional silicon-based field effect transistor, the novel transistor provided by the invention has a similar symmetrical structure, does not need a channel region without grid coverage, and has the advantages of small device size, small on-resistance and complete compatibility with a self-alignment process.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits and semiconductor devices, and in particular relates to a transistor with embedded source and drain and a preparation method thereof. Background technique [0002] Integrated circuit technology is the cornerstone of the development of contemporary information society. Since the invention of the first integrated circuit with only five components in the 1950s, the integrated circuit has developed rapidly towards the trend of multi-function, high speed, low power consumption and low price, and has become an indispensable part of various information technologies. Core components. The driving force behind the rapid development of integrated circuits is the continuous reduction in the size of unit field effect transistors. In large-scale digital integrated circuits and low-power analog integrated circuits, field effect transistors generally have low operating voltages to achieve low power ...

AI Technical Summary

Problems solved by technology

However, LDMOS has some shortcomings that need to be overcome

Due to the introduction of a longer drift region, the size of the device becomes larger and the integration density is reduced

In addition, this drift region introduces a large series resistance, which reduces the effective drive current of the device

In terms of process preparation, since the entire device becomes very asymmetrical, it is difficult to form the drain with a self-aligned process method, and it is easily affected by the overlay error of lithography.

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