Sulfur ion implanted nano-diamond-graphene composite film electrode and preparation method thereof

A composite technology of nano-diamond and graphene, which is applied in the direction of ion implantation plating, metal material coating process, superimposed layer plating, etc. In the field of high-precision electrochemical detection, the influence of electrical and electrochemical properties, etc., to achieve excellent electrochemical activity, improve electrical conductivity and electrochemical properties, and increase the electrochemical active area

Active Publication Date: 2022-06-21
ZHEJIANG UNIV OF TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The results of sulfur ion implantation and annealing of conventional NCD films show that sulfur ion implantation improves the conductivity of grains, and the electrochemical response characteristics of sulfur ion implanted NCD films after annealing at 900 ° C are greatly improved, but the background current is still Larger, the potential window is still narrow, it is difficult to be used in the field of high-precision electrochemical detection
[0004] The NCD-G film is different from the traditional NCD film, which is composed of nano-diamond and graphene. When sulfur ions are implanted into the NCD-G film, the electrical and electrochemical properties of graphene with different morphologies and positional relationships in the grain boundaries are affected. impact, no literature reports
At the same time, it has been studied in the literature that sulfur is covalently grafted to the surface of graphene as an anchor metal single atom or metal nano-ion, and the good conductivity of graphene is used to improve the electrochemical catalytic properties of the anchor material, and No report on conductivity and electrochemical activity of sulfur-doped graphene

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sulfur ion implanted nano-diamond-graphene composite film electrode and preparation method thereof
  • Sulfur ion implanted nano-diamond-graphene composite film electrode and preparation method thereof
  • Sulfur ion implanted nano-diamond-graphene composite film electrode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Mix diamond powder (purchased from Shanghai Jiye Abrasives Co., Ltd., model w1) and glycerin (glycerol) in a ratio of 1 g: 100 ml, stir evenly with a glass rod, and place it in an ultrasonic cleaner for ultrasonic dispersion for 5 minutes to make it. It is fully and evenly dispersed to form a diamond powder grinding paste, which is reserved for later use; take an appropriate amount of the prepared diamond powder grinding paste on the polishing flannel, and polish the single crystal silicon wafer for 30 minutes; The silicon wafers were ultrasonically cleaned successively in acetone and alcohol solutions for 5 minutes; the cleaned silicon wafers were blown dry with a nitrogen gun, and wrapped with lens tissue for use.

[0043]The single crystal silicon substrate after the seed crystal is put into the hot wire chemical vapor deposition equipment, and acetone is used as the carbon source, and the acetone is brought into the reaction chamber by means of hydrogen bubbling. Th...

Embodiment 2

[0052] Mix diamond powder (purchased from Shanghai Jiye Abrasives Co., Ltd., model w1) and glycerin (glycerol) in a ratio of 1 g: 100 ml, stir evenly with a glass rod, and place it in an ultrasonic cleaner for ultrasonic dispersion for 5 minutes to make it. It is fully and evenly dispersed to form a diamond powder grinding paste, which is reserved for later use; take an appropriate amount of the prepared diamond powder grinding paste on the polishing flannel, and polish the single crystal silicon wafer for 30 minutes; The silicon wafers were ultrasonically cleaned in acetone and alcohol solutions for 5 minutes successively; the cleaned silicon wafers were blown dry with a nitrogen gun, and wrapped with lens tissue for use.

[0053] The single crystal silicon substrate after the seed crystal is put into the hot wire chemical vapor deposition equipment, and acetone is used as the carbon source, and the acetone is brought into the reaction chamber by means of hydrogen bubbling. T...

Embodiment 3

[0062] Mix diamond powder (purchased from Shanghai Jiye Abrasives Co., Ltd., model w1) and glycerin (glycerol) in a ratio of 1 g: 100 ml, stir evenly with a glass rod, and place it in an ultrasonic cleaner for ultrasonic dispersion for 5 minutes to make it. It is fully and evenly dispersed to form a diamond powder grinding paste, which is reserved for later use; take an appropriate amount of the prepared diamond powder grinding paste on the polishing flannel, and polish the single crystal silicon wafer for 30 minutes; The silicon wafers were ultrasonically cleaned in acetone and alcohol solutions for 5 minutes successively; the cleaned silicon wafers were blown dry with a nitrogen gun, and wrapped with lens tissue for use.

[0063] The single crystal silicon substrate after the seed crystal is put into the hot wire chemical vapor deposition equipment, and acetone is used as the carbon source, and the acetone is brought into the reaction chamber by means of hydrogen bubbling. T...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
Login to view more

Abstract

The invention provides a nano-diamond-graphene composite film implanted with sulfur ions. The invention uses hot wire chemical vapor deposition to prepare a nano-diamond-graphene composite film on a single crystal silicon substrate, and performs sulfur ion injection on the prepared composite film. Injection, and vacuum annealing is performed on the implanted composite film to obtain the SNCD‑G composite film. This composite film has excellent electrochemical activity, extremely low background current and wide potential window, which is very conducive to the application in high precision in the field of trace detection.

Description

technical field [0001] The invention relates to a nano-diamond-graphene composite thin film electrode implanted with sulfide ions and a preparation method thereof. Background technique [0002] Due to its extremely low background current, wide potential window and good electrochemical response characteristics, diamond thin films are considered as ideal materials for high-precision electrochemical detection electrodes. However, conventionally grown nanodiamond films (NCDs) are composed of nanodiamond grains and amorphous carbon grain boundaries. Amorphous carbon or nanographite have good electrical properties and can effectively promote the electrochemical response of the electrode, making the electrochemical response As the current increases, the rate of charge transfer decreases. However, the amorphous carbon phase also greatly increases the background current and reduces the potential window, limiting the application of nanodiamond electrodes in the field of high-precisio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/26C23C14/48C23C14/58C23C28/04
CPCC23C16/26C23C14/48C23C14/5806C23C28/04
Inventor 胡晓君蒋梅燕陈成克李晓
Owner ZHEJIANG UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap