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Flexible ZnO@TiN core-shell structure array cathode and preparation method thereof

A core-shell structure and array technology, applied in the field of cold cathode electron emission materials, can solve the problems of low work function electron transport performance, poor electron transport and thermal conductivity, and small saturated emission current density, to achieve electron transport and conduction Excellent ability, excellent core-shell bonding strength, and high emission current density

Inactive Publication Date: 2020-05-19
FUJIAN UNIV OF TECH
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Problems solved by technology

On the other hand, transition metal nitrides such as TiN (M.K.Faruque, K.M.Darkwa, Z.G. Xu, D.Kumar, Appl. Surf. Sci. 260(2012) 36-41), LaB 6 (J.Q.Xu, G.H.Hou, H.Q.Li, T.Y.Zhai, et al., NPG Asia Materials, 5(2013) 1-5) has the characteristics of low work function and excellent electron transport performance, but its one-dimensional nanostructure preparation requires High-temperature process with constraints on substrate selection and scale-up
The main problems of the existing one-dimensional ZnO nano-cold cathode electron emitters: 1. The high work function of the material nature leads to high turn-on and threshold electric fields; 2. The saturated emission current density is small; 3. Poor electron transport and thermal conductivity, The tip of the emitter is easily burned under the action of Joule heat

Method used

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  • Flexible ZnO@TiN core-shell structure array cathode and preparation method thereof
  • Flexible ZnO@TiN core-shell structure array cathode and preparation method thereof
  • Flexible ZnO@TiN core-shell structure array cathode and preparation method thereof

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preparation example Construction

[0035] The present invention also provides a preparation method of the flexible ZnO@TiN core-shell structure array cathode, such as figure 1 shown, including the following steps:

[0036] (1) The ZnO seed layer was prepared on both sides of the carbon cloth by the sol-gel method. Specifically include the following steps:

[0037] (101) 1.4~2.8 g of Zn(CH 3 COOH) 2 Dissolve in 35-80 mL of absolute ethanol, stir at room temperature for 20-40 min, then slowly drop into 0.8-1.5 mL of ethanolamine; put the obtained solution in a dry box, and age at 50-80 ℃ for 6-14 h to form Sol;

[0038] (102) After soaking the carbon cloth in the sol for 8-20 s, take it out, put the dip-coated carbon cloth in a drying oven at 70-90°C for heat treatment for 10-20 min;

[0039] (103) After repeating step (102) several times, put the gel-coated carbon cloth into a muffle furnace for annealing to 400-480 °C, and keep it warm for 40-70 min to prepare ZnO seeds on both sides of the carbon cloth ...

Embodiment 1

[0050] (1) Preparation of ZnO seed layer by sol-gel method

[0051] 2.6 g of Zn(CH 3 COOH) 2 Dissolve in 80 mL of ethanol, stir at room temperature for 30 min, then slowly drop into 1.4 mL of ethanolamine, then put the resulting solution in a dry box, and age at 70 °C for 14 h to form a sol. Then, the carbon cloth (3 cm × 6 cm) was dipped in the above sol for 15 s and then taken out, and the dipped carbon fiber cloth was heat-treated in a drying oven at 80 °C for 20 min. After repeating the above process four times, the gel-coated carbon cloth was annealed in a muffle furnace to 480 °C for 50 min.

[0052] (2) Preparation of ZnO nanorod arrays by liquid phase method

[0053] 1.3 g of Zn(CH 3 COOH) 2 Add to 45 ml of deionized water, stir well to form Zn(CH 3 COOH) 2 solution, 5.1 g of NaOH was added to 35 mL of deionized water, and fully stirred to form a NaOH solution. The carbon cloth coated with the seed layer in step (1) was then vertically inserted into the Zn(CH ...

Embodiment 2

[0057] (1) Preparation of ZnO seed layer by sol-gel method

[0058] 2.2 g of Zn(CH 3 COOH) 2 Dissolve in 50 mL of ethanol, stir at room temperature for 30 min, then slowly drop into 1.2 mL of ethanolamine, then put the resulting solution in a dry box, and age at 60 °C for 8 h to form a sol. Then, the carbon cloth (3 cm × 6 cm) was dipped in the above sol for 10 s and then taken out, and the dipped carbon fiber cloth was heat-treated in a drying oven at 90 °C for 10 min. After repeating the above process four times, the gel-coated carbon cloth was annealed in a muffle furnace to 450 °C for 60 min.

[0059] (2) Preparation of ZnO nanorod arrays by liquid phase method

[0060] 1.2 g of Zn(CH 3 COOH) 2 Add to 40 ml of deionized water, stir well to form Zn(CH 3 COOH) 2 solution, add 4.6 g of NaOH to 30 mL of deionized water, stir well to form a NaOH solution; then insert the carbon cloth coated with the seed layer in step (1) vertically into the Zn(CH 3 COOH) 2 In a reacti...

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Abstract

The invention relates to a flexible ZnO@TiN core-shell structure array cathode and a preparation method thereof. The ZnO@TiN core-shell structure array cathode comprises carbon cloth, two side surfaces of the carbon cloth are coated with ZnO seed layers, ZnO nanorod arrays are arranged on the ZnO seed layers on the two side surfaces, and TiN is deposited on the ZnO nanorod array on one side surface to form a core-shell structure array. The preparation method comprises the following steps of: (1) preparing the ZnO seed layers on two side surfaces of carbon cloth by adopting a sol-gel method, (2) preparing ZnO nanorod arrays on the ZnO seed layers on the two side surfaces by adopting a liquid phase method, and (3) depositing TiN on the ZnO nanorod array on one side surface by adopting a magnetron sputtering method so as to prepare the ZnO@TiN core-shell structure array cathode. The ZnO@TiN core-shell structure array cathode is low in opening and threshold electric field, high in emissioncurrent density and good in electron transport and conductivity, and can be applied to a vacuum field emission electron source device.

Description

technical field [0001] The invention belongs to the field of cold cathode electron emission materials, and in particular relates to a flexible ZnO@TiN core-shell structure array cathode and a preparation method thereof. Background technique [0002] Field emission, that is, cold cathode electron emission, is a phenomenon in which the height of the surface barrier of a material is reduced and the width is narrowed by the action of an external electric field, and electrons pass through or cross the surface barrier through the tunnel effect of quantum mechanics and are injected into the vacuum. Cold cathode electron field emission materials are widely used in vacuum microelectronic devices (such as X-ray tubes, electron sources, microwave tubes, etc.). Cold cathode materials meeting these device requirements generally have low work functions ( φ ) and a high field enhancement factor ( β ). One-dimensional oxide nanostructure arrays, such as: ZnO nanowires, nanorods, nanoribb...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/304H01J9/02
CPCH01J1/304H01J9/025H01J2201/30496H01J2201/30488
Inventor 马立安赖文宗魏朝晖陈彦斌
Owner FUJIAN UNIV OF TECH
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