High-frequency narrow-pulse semiconductor laser driving circuit

Abstract

The invention relates to the technical field of semiconductor lasers, and discloses a high-frequency narrow-pulse semiconductor laser driving circuit. The driving circuit comprises a narrow-pulse signal source and a pulse shaping circuit, wherein the narrow-pulse signal source is used for outputting a pair of nanosecond differential narrow-pulse signals; and the pulse shaping circuit is connectedwith the narrow pulse signal source and is used for triggering shaping of the differential narrow pulse signal according to the edge of the differential narrow pulse signal and outputting a path of picosecond-level narrow pulse signals. According to the invention, two paths of nanosecond-level narrow pulse signals are transmitted at the same time by utilizing a differential signal concept, so thatthe signal transmission process has relatively strong anti-interference capability; the pulse widths of the two paths of nanosecond-level narrow pulse signals are respectively shaped and compressed through the pulse shaping circuit; and finally, one path of picosecond-level narrow pulse signals is output, so that the requirement for obtaining narrower pulses in laser driving application is met, external interference in the nanosecond-level narrow pulse signal transmission process can be prevented through application of edge triggering, and the correctness of transmitted data is guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a high-frequency narrow-pulse semiconductor laser drive circuit. Background technique [0002] Semiconductor lasers are gradually replacing He-Ne lasers in many aspects, and have been widely used in optical fiber communications, integrated optics, laser printing, laser beam scanning, optical disk storage technology, laser ranging, laser radar, pumped solid-state lasers, pulse Doppler Le imaging, 3D image system, fiber optic temperature sensor and other fields. In many fields, especially in the fields of target recognition and laser ranging, the performance of target recognition, ranging accuracy, anti-interference and low power consumption all depend on the quality of laser pulses emitted by semiconductor lasers, and semiconductor lasers The emitted optical pulse is directly modulated by the electrical pulse generated by the semiconductor laser drive circuit, that i...

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Problems solved by technology

For example, the patent literature with the publication number CN101009486A pointed out "Insulated Gate Power Transistor Narrow Pulse Driver". Turn off, although the shaping of the pulse signal can also be realized, the pulse transformer cannot meet the higher requirements of the narrow pulse output, and the design of the pulse signal connected to the gate of the power transistor T is also prone to the problem of excessive rise time and fall time , single-pulse signals are susceptible to interference, and the circuit stability is not high, so the above-mentioned circuit can never be driven by a narrow pulse with a pulse width less than 1 ns; another example is a patent document with the announcement number CN103227413B disclosing a "semiconductor laser drive circuit", Including: a pulse shaping circuit, used to shape the waveform of the input narrow pulse signal, and further compress its pulse width; and a power amplifier circuit, connected with the pulse shaping circuit, used to use high voltage to adjust the output narrow pulse The pulse signal is power amplified, and the high level of the amplified narrow pulse signal is output to the positive pole of the laser, and the low level is output to the negative pole of the laser

It can meet the requirements of high power and narrow pulse at the same time, and finally debug and obtain a signal with a pulse width as narrow as 20ns and a repetition frequency range of 100Hz-100KHz, but it is relatively difficult to adjust a narrow pulse with a pulse width less than 1ns

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