P-type oxide semiconductor film and method for forming same
A technology of oxide semiconductors and n-type semiconductors, which is applied in semiconductor devices, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., to achieve the effect of excellent semiconductor characteristics
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Examples
Embodiment 1
[0135] 1. Film forming device
[0136] use figure 1 The film forming apparatus used in this example will be described. figure 1 The film forming apparatus 1 of the present invention is provided with: a quartz cylinder 2 connected to a carrier gas supply source; and a quartz raw material installation table 4 installed in the quartz cylinder 2; A heater 3 is provided in a cylindrical shape on the outside of the quartz tube 2 around the raw material installation table, and the raw material 5 can be heated. In addition, a quartz substrate stage is provided inside the quartz cylinder 2 as a stage 7, and the stage 7 can be adjusted so that it is within the crystal growth temperature.
[0137] 2. Preparation for film formation
[0138] IrO is placed on the raw material setting table 4 2 Powder was used as a raw material 5 , and a sapphire substrate was set on a stage 7 as a substrate 6 . Next, the temperature of the heater 3 was raised to 850° C., and the raw material was placed...
Embodiment 2 and comparative example 2
[0155] Except having lengthened the film-forming time, the films were obtained in the same manner as in Example 1 and Comparative Example 1, respectively, and were used as Example 2 and Comparative Example 2, respectively. Next, the cross section of the obtained film was observed using SEM. The results are shown in Image 6 . like Image 6 It is clear that the film obtained in Example 2 was in the form of a film, whereas the film obtained in Comparative Example 2 grew in the shape of needles and did not become a homogeneous film.
[0156] From the results of Examples and Comparative Examples, the p-type oxide semiconductor film of the present invention is industrially useful because of its excellent surface smoothness, crystallinity, and other film qualities, and it can be seen that the electrical characteristics such as mobility are also excellent.
Embodiment 3
[0158] A p-type oxide semiconductor film was obtained in the same manner as in Example 1 except that the film formation time was 2 hours. Next, an n-type semiconductor layer is stacked on the p-type oxide semiconductor film. Lamination of the n-type semiconductor layer is carried out by mixing gallium bromide (gallium concentration 0.1 mol / L) and ultrapure water, adding hydrobromic acid so that the volume ratio becomes 20%, and adjusting the aqueous solution as a raw material A film was formed in the same manner as in Comparative Example 1 except that the temperature of the heater was set to 420° C. and the film-forming time was set to 30 minutes. Membrane is α-Ga 2 o 3 membrane.
[0159] Then, an n+ type semiconductor layer is stacked on the obtained n− type semiconductor layer. Lamination of the n+ type semiconductor layer is carried out by mixing gallium bromide (gallium concentration 0.1 mol / L) and ultrapure water, adding hydrobromic acid to adjust the aqueous solution...
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Abstract
Description
Claims
Application Information
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