Method for predicting solid-liquid interface of Czochralski method monocrystalline silicon based on ANN

Abstract

The invention discloses a method for predicting a solid-liquid interface of Czochralski method monocrystalline silicon based on ANN. The method comprises the following steps: firstly, establishing a two-dimensional global heat transfer numerical model of a Czochralski method monocrystalline silicon growth furnace by adopting a finite volume method; carrying out numerical simulation under each process parameter, collecting simulation data of monocrystalline silicon growth and arranging the simulation data into a data set; dividing the data set into a training set and a test set, performing normalization processing, determining a machine learning algorithm, establishing a prediction model of the quality of the Czochralski method monocrystalline silicon, and evaluating the reliability of themodel. And then, calculating the growth quality of the monocrystalline silicon by utilizing the prediction model, and evaluating a prediction result on the test set. And finally, predicting an optimalgrowth condition. According to the method, the key factors influencing the quality of the Czochralski method monocrystalline silicon can be quickly found out, and the crystal quality under the key factors is accurately predicted, so that proper growth conditions are obtained, the research and development efficiency is improved, the expenditure is saved, and the large-size and high-quality monocrystalline silicon is grown.

Description

technical field [0001] The invention relates to a method for detecting the quality of silicon single crystal products, in particular to an ANN-based method for predicting the solid-liquid interface of single crystal silicon in a pulling method. Background technique [0002] Silicon single crystal is an indispensable basic material for industries such as integrated circuits and solar photovoltaic power generation. With the rise of emerging technologies such as 5G and artificial intelligence and the popularization of solar photovoltaic power generation, its demand is increasing day by day. Large diameter, high quality, and low cost are the future development trends of silicon single crystal. [0003] Czochralski (CZ) single crystal silicon growth technology is the mainstream method for preparing silicon single crystal. However, as the crystal size increases, the latent heat of crystallization released at the solid-liquid interface increases sharply, making it more difficult t...

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Problems solved by technology

Currently in numerical simulation, the method of controlling the solid-liquid interface by adjusting the crystal rotation speed, crucible rotation speed, and pulling speed at specific intervals within a certain range cannot guarantee that the obtained process parameters are optimal. Non-linear strong coupling characteristics, complex calculation, time-consuming

In addition, the CZ single crystal silicon growth system involves many growth process parameters, and there is no explicit relationship between the growth process parameters and the crystal quality. It is difficult to quickly obtain the relationship between many growth parameters and crystal quality by relying on traditional numerical simulation methods relation

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