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X-ray detector suitable for high temperature environment and preparation method thereof

A high-temperature environment and X-ray technology, which is applied in the field of X-ray detectors and its preparation in high-temperature environments, can solve the problems of ion migration, device performance degradation, and inability to apply high-temperature environments, etc., to achieve sensitive and stable work response, improve Effects of response sensitivity and excellent photoelectric characteristics

Active Publication Date: 2022-07-19
SHAANXI NORMAL UNIV
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Problems solved by technology

[0003] However, there is a common problem in the X-ray detectors that are basically reported at present: the noise of the device increases sharply or the active material is thermally decomposed due to the device’s heat generation or high temperature environment, which leads to a sharp decline in the device’s performance and cannot work or cannot work.
For example, amorphous selenium (α-Se) detectors are prone to crystallization at higher room temperature due to the many structural defects in the material and the lower glass transition temperature, so the daily work needs to be kept within the range of 10°C-35°C; CdZnTe detector is an excellent room-temperature semiconductor radiation detector, but the performance of the device drops sharply due to thermally excited carrier noise in high-temperature environments; the organic-inorganic hybrid perovskite materials have organic and inorganic components. The binding force is weak, and the decomposition temperature of the intrinsic material is low, so it cannot be used in high temperature environment
Moreover, the reported perovskite materials have high intrinsic carrier concentration, narrow optical bandgap, low resistivity, and ion migration.
As the temperature increases, the intrinsic carrier concentration of the semiconductor material further increases, the resistivity decreases, and the ion migration is serious, resulting in a sharp increase in the noise of the device and a large leakage current that causes the device to heat up.

Method used

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  • X-ray detector suitable for high temperature environment and preparation method thereof
  • X-ray detector suitable for high temperature environment and preparation method thereof
  • X-ray detector suitable for high temperature environment and preparation method thereof

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preparation example Construction

[0030] A preparation method of an X-ray detector suitable for a high temperature environment of the present invention comprises the following steps:

[0031] Step 1, put A 3 Bi 2 X 9 Type all-inorganic bismuth-based halide perovskite single crystal cut into the required size, where A is Cs + and Rb + One of them; X is I - , Br - and Cl - one or more of the mixture;

[0032] Step 2, put the cut A 3 Bi 2 X 9 Type perovskite single crystal for cleaning and surface polishing;

[0033] Step 3, A obtained in step 2 3 Bi 2 X 9 Metal electrodes were evaporated at both ends of the perovskite single crystal to obtain metal electrodes, A3 Bi 2 X 9 X-ray detector with layered perovskite single crystal and metal electrode.

[0034] Among them, A 3 Bi 2 X 9 The all-inorganic bismuth-based halide perovskite single crystal was obtained by the following method:

[0035] Step 1.1, according to the molar ratio, the bismuth halide BiX 3 and inorganic halide salt AX to configu...

Embodiment 1

[0041] An X-ray detector suitable for high temperature environment is made by the following steps:

[0042] Step 1, the molar ratio of BiI of 2:3 3 and CsI were dissolved in 30mL of DMF solvent, and configured into 0.8M Cs 3 Bi 2 I 9 precursor solution. The precursor solution was placed in a 70°C oven, and the temperature was gradually increased to 100°C at a heating rate of 6°C / day to obtain the all-inorganic Cs. 3 Bi 2 I 9 perovskite single crystal;

[0043] Step 2, cutting the obtained crystal with diamond yarn along the crystal plane to obtain several crystals with a thickness of 1.2 mm;

[0044] Step 3, will get the small size Cs 3 Bi 2 I 9 The single crystal is polished on sandpaper;

[0045] Step 4, in Cs 3 Bi 2 I 9 Gold electrodes are evaporated on both ends of the crystal;

[0046] Step 5, the obtained Au / Cs 3 Bi 2 I 9 / Au device is fixed on conductive glass with silver paste;

[0047] Step 6, a thermocouple thermometer is connected to the bottom of...

Embodiment 2

[0050] An X-ray detector suitable for high temperature environment is made by the following steps:

[0051] Step 1, the molar ratio of BiI of 2:3 3 and CsI were dissolved in 30mL of DMF / DMSO (7:3) mixed solvent to prepare 0.8M Cs 3 Bi 2 I 9 precursor solution. The all-inorganic Cs can be obtained by placing the precursor in an oven at 80°C and gradually raising the temperature to 120°C at a heating rate of 6°C / day. 3 Bi 2 I 9 perovskite single crystal;

[0052] Step 2, cutting the obtained crystal with diamond yarn along the crystal plane to obtain several crystals with a thickness of 1.2 mm;

[0053] Step 3, will get the small size Cs 3 Bi 2 I 9 The single crystal is polished on sandpaper;

[0054] Step 4, in Cs 3 Bi 2 I 9 Ag electrodes are evaporated on both ends of the crystal;

[0055] Step 5, the obtained Ag / Cs 3 Bi 2 I 9 / Ag device is fixed on conductive glass with silver paste;

[0056] Step 6, a thermocouple thermometer is connected to the bottom of ...

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Abstract

An X-ray detector suitable for high temperature environment and preparation method thereof, using A 3 Bi 2 X 9 type all-inorganic bismuth-based halide perovskite single crystal material as the active layer for detecting X-rays, where A is Cs + and Rb + One of them; X is I ‑ , Br ‑ and Cl ‑ One or more of the mixtures; the working temperature is 50‑150℃. The preparation method comprises the following steps, step 1, A 3 Bi 2 X 9 Type all-inorganic bismuth-based halide perovskite single crystal is cut into the required size, where A is Cs + and Rb + One of them; X is I ‑ , Br ‑ and Cl ‑ One or more of the mixed; step 2, the cut A 3 Bi 2 X 9 Type perovskite single crystal is cleaned and surface polished; step 3, the A obtained in step 2 3 Bi 2 X 9 metal electrodes were evaporated at both ends of the perovskite single crystal to obtain metal electrodes, A 3 Bi 2 X 9 X-ray detectors with layered perovskite single crystals and metal electrodes. A 3 Bi 2 X 9 The all-inorganic bismuth-based halide perovskite single crystal is used as the active layer of an X-ray detector suitable for a high temperature environment, and the temperature of the high temperature environment is 50-150 °C.

Description

technical field [0001] The invention relates to an X-ray detector used in a high temperature environment, in particular to an X-ray detector suitable for a high temperature environment and a preparation method thereof. Background technique [0002] Semiconductor radiation detectors have been widely used in defense and military, medical and health, public safety, high-end industry, scientific research and other industries due to their high energy resolution, high detection efficiency, and large stopping ability. Among them, the semiconductor detector used for radioactive ray detection outputs signals by directly converting the absorbed ray energy into electron-hole pairs and drifting under the action of an external electric field. In practical applications, different semiconductors are selected as light-absorbing layer materials for detectors according to different applications. X-ray detectors can be divided into two types: direct type and indirect type. In comparison, dire...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/115H01L31/032H01L31/18
CPCH01L31/115H01L31/032H01L31/18Y02P70/50
Inventor 刘生忠张云霞刘渝城
Owner SHAANXI NORMAL UNIV
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