X-ray detector suitable for high-temperature environment and preparation method thereof

Abstract

According to the X-ray detector suitable for the high-temperature environment and the preparation method thereof, an A<3>Bi<2>X<9> type all-inorganic bismuth-based halogen perovskite single crystal material is adopted as an active layer for detecting X-rays, and A is one of Cs<+> and Rb<+>; x is one or a mixture of more of I<->, Br<-> and Cl<->, wherein the working temperature is 50-150 DEG C. Thepreparation method comprises the following steps that: the step 1, an A<3>Bi<2>X<9> type all-inorganic bismuth-based halogen perovskite single crystal is cut into the needed size, and A is one of Cs<+> and Rb<+>; x is one or a mixture of more of I<->, Br<-> and Cl<->; the step 2, the cut A<3>Bi<2>X<9> type perovskite single crystal is subjected to cleaning and surface polishing treatment; and thestep 3, metal electrodes are evaporated at the two ends of the A<3>Bi<2>X<9> type perovskite single crystal obtained in the step 2 to obtain the X-ray detector formed by stacking the metal electrodes, the A<3>Bi<2>X<9> type perovskite single crystal and the metal electrodes. The A<3>Bi<2>X<9> type all-inorganic bismuth-based halogen perovskite single crystal is used as an active layer of an X-raydetector suitable for a high-temperature environment, and the temperature of the high-temperature environment is 50-150 DEG C.

Description

technical field [0001] The invention relates to an X-ray detector used in a high temperature environment, in particular to an X-ray detector suitable for a high temperature environment and a preparation method thereof. Background technique [0002] Semiconductor radiation detectors have been widely used in defense and military, medical and health, public safety, high-end industry, scientific research and other industries due to their high energy resolution, high detection efficiency, and large stopping ability. Among them, the semiconductor detector used for radioactive ray detection outputs signals by directly converting the absorbed ray energy into electron-hole pairs and drifting under the action of an external electric field. In practical applications, different semiconductors are selected as light-absorbing layer materials for detectors according to different applications. X-ray detectors can be divided into two types: direct type and indirect type. In comparison, dire...

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Problems solved by technology

[0003] However, there is a common problem in the X-ray detectors that are basically reported at present: the noise of the device increases sharply or the active material is thermally decomposed due to the device’s heat generation or high temperature environment, which leads to a sharp decline in the device’s performance and cannot work or cannot work.

For example, amorphous selenium (α-Se) detectors are prone to crystallization at higher room temperature due to the many structural defects in the material and the lower glass transition temperature, so the daily work needs to be kept within the range of 10°C-35°C; CdZnTe detector is an excellent room-temperature semiconductor radiation detector, but the performance of the device drops sharply due to thermally excited carrier noise in high-temperature environments; the organic-inorganic hybrid perovskite materials have organic and inorganic components. The binding force is weak, and the decomposition temperature of the intrinsic material is low, so it cannot be used in high temperature environment

Moreover, the reported perovskite materials have high intrinsic carrier concentration, narrow optical bandgap, low resistivity, and ion migration.

As the temperature increases, the intrinsic carrier concentration of the semiconductor material further increases, the resistivity decreases, and the ion migration is serious, resulting in a sharp increase in the noise of the device and a large leakage current that causes the device to heat up.

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