A preparation method of high-density conductive zirconia ceramic target material for magnetron sputtering
A technology of zirconia ceramics and magnetron sputtering, which is applied in the direction of sputtering coating, metal material coating process, vacuum evaporation coating, etc., can solve the problems of not being able to obtain qualified targets and meet requirements, and achieve the goal of protecting electronics The surface of the product and the sputtering runway are smooth without nodules, and the production process is simple
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[0020] A method for preparing a high-density conductive zirconia ceramic target material for magnetron sputtering. After adding a stabilizer and a conductive Nb or Ta metal material to the zirconia powder, ball milling and mixing, and calcining in a hydrogen atmosphere to obtain a conductive The powder is then pressurized under high temperature and high vacuum conditions to ensure the target material forming and target material compactness. The preparation method specifically includes the following steps.
[0021] A. Doping of zirconia powder: Zirconia (ZrO 2 ) powder and stabilizer diyttrium trioxide (Y 2 o 3 ), magnesium oxide (MgO) that can change the brittleness of the target, and metal niobium (Nb) or tantalum (Ta) that play a conductive role are doped in proportion. The doping ratio is: ZrO 2 The mass fraction is 88%~90%, Y 2 o 3 The mass fraction is 8% to 9%, the MgO mass fraction is 1% to 1.5%, and the Nb or Ta mass fraction is 1% to 1.5%. The prepared powder is ...
Embodiment 1
[0033] A method for preparing a high-density conductive zirconia ceramic target for magnetron sputtering specifically includes the following steps.
[0034] A. Pretreatment of zirconia powder: ball mill and mix zirconia powder with a certain proportion of stabilizer and metal powder in a ball mill to obtain a mixed material. In the present embodiment, stabilizer adopts diyttrium trioxide (Y 2 o 3 ), the metal powder is metallic niobium (Nb); wherein, wt% ZrO 2 =89%, Y 2 o 3 The addition ratio of wt% Y 2 o 3 = 8%, wt% MgO = 1.5%, wt% Nb = 1.5%. The prepared powder was put into a ball mill and mixed for 4 hours, and weighed 40kg.
[0035] B. Put 40kg of mixed powder obtained in step A into H 2 Calcined in an atmosphere sintering furnace at a calcination temperature of 850°C for 5 hours.
[0036] C. Perform isostatic pressing on the conductive mixed material obtained in step B. The isostatic pressing pressure is 125MPa, and the pressure holding time is 1h; it is pressed ...
Embodiment 2
[0041] A method for preparing a high-density conductive zirconia ceramic target for magnetron sputtering specifically includes the following steps.
[0042] A. Pretreatment of zirconia powder: ball mill and mix zirconia powder with a certain proportion of stabilizer and metal powder in a ball mill to obtain a mixed material. In the present embodiment, stabilizer adopts diyttrium trioxide (Y 2 o 3 ), the metal powder is metal tantalum (Ta); wherein, wt% ZrO 2 = 90%, Y 2 o 3 The addition ratio of wt% Y 2 o 3 = 8%, wt% MgO = 1%, wt% Ta = 1%. Ball mill and mix the proportioned powder for 4 hours, and weigh 40kg.
[0043] B. Put 40kg of mixed powder obtained in step A into H 2 Calcined in an atmosphere sintering furnace at a calcination temperature of 880°C for 6 hours.
[0044] C. Perform isostatic pressing on the conductive mixed material obtained in step B. The isostatic pressing pressure is 140 MPa, and the pressure holding time is 1.5 h; it is pressed into a block-sha...
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