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Preparation method of biomarker modified semiconductor paste electrode sensor

An electrode sensor and biomarker technology, applied in the field of electrochemical analysis, can solve the problems of inefficient use of area and low capacity, and achieve the effects of low cost, wide electrochemical window, high selectivity and sensitivity

Inactive Publication Date: 2020-08-18
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The capacity of single-layer graphene can reach 21μF / cm 2 , but in many cases graphene is stacked with multiple layers, the area between layers is not effectively utilized, and its actual capacity is lower than that of single-layer graphene. Combining graphene with other nanostructures also inhibits the development of graphene layer overlap

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Preparation of gallium arsenide paste electrode sensor: In an agate mortar, add nano-gallium arsenide: 46g, graphene oxide: 20g, 1-aminoethyl-3-methylimidazolium nitrate: 12g , carbon quantum dots: 6g, liquid paraffin: 8 mL, kerosene: 9 mL, grind evenly to obtain the mixture carbon paste; then put the carbon paste into a glass tube with an inner diameter of Φ6mm connected with a wire, compact and dry, Grinding with polishing powder, polishing, and washing with deionized water, the gallium arsenide paste electrode sensor is obtained;

[0028] (2) Preparation of γ-aminopropylmethyldiethoxysilane modified gallium arsenide paste electrode: In the reactor, add ethanol: 91 mL, γ-aminopropylmethyldiethoxysilane: 28g , stir and dissolve, put the gallium arsenide paste electrode into it, soak it at room temperature for 4 hours, raise the temperature to 50±2°C for 4 hours, take out the electrode, wash it with absolute ethanol, and dry it to obtain γ-aminopropylmethyldiethoxy ...

Embodiment 2

[0031] (1) Preparation of gallium arsenide paste electrode sensor: In an agate mortar, add nano-gallium arsenide: 44g, graphene oxide: 22g, 1-aminoethyl-3-methylimidazolium nitrate: 10g , carbon quantum dots: 4g, liquid paraffin: 10 mL, kerosene: 11 mL, grind evenly to obtain the mixture carbon paste; then put the carbon paste into a glass tube with an inner diameter of Φ6mm connected with a wire, compact and dry, Grinding with polishing powder, polishing, and washing with deionized water, the gallium arsenide paste electrode sensor is obtained;

[0032](2) Preparation of γ-aminopropylmethyldiethoxysilane modified gallium arsenide paste electrode: In the reactor, add ethanol: 47 mL, γ-aminopropylmethyldiethoxysilane: 13g , stir and dissolve, put the gallium arsenide paste electrode into it, soak it at room temperature for 4 hours, raise the temperature to 50±2°C for 4 hours, take out the electrode, wash it with absolute ethanol, and dry it to obtain γ-aminopropylmethyldiethoxy...

Embodiment 3

[0035] (1) Preparation of gallium arsenide paste electrode sensor: In an agate mortar, add nano-gallium arsenide: 48g, graphene oxide: 18g, 1-aminoethyl-3-methylimidazolium nitrate: 14g , carbon quantum dots: 8g, liquid paraffin: 6 mL, kerosene: 7mL, grind evenly to obtain the mixture carbon paste; then put the carbon paste into a glass tube with an inner diameter of Φ6mm connected with a wire, compact, dry, and use Grinding with polishing powder, polishing, and washing with deionized water, the gallium arsenide paste electrode sensor is obtained;

[0036] (2) Preparation of γ-aminopropylmethyldiethoxysilane modified gallium arsenide paste electrode: In the reactor, add ethanol: 43 mL, γ-aminopropylmethyldiethoxysilane: 14g , stir and dissolve, put the gallium arsenide paste electrode into it, soak it at room temperature for 4 hours, raise the temperature to 50±2°C for 4 hours, take out the electrode, wash it with absolute ethanol, and dry it to obtain γ-aminopropylmethyldieth...

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Abstract

The invention discloses a preparation method of a biomarker modified semiconductor paste electrode sensor, and the method is characterized in that the method comprises the steps: preparing a gallium arsenide paste electrode sensor by using nano gallium arsenide, graphene oxide and carbon quantum dots as conductive materials and using 1-aminoethyl-3-methylimidazole to modify a nitrate adhesive; modifying a gallium arsenide paste electrode by adopting gamma-aminopropyl methyl diethoxysilane as a coupling agent; in a reactor, adding the following components by the mass percentage concentration: 90-94%of buffer solution, the preparation method comprises the following steps: dissolving 6-10% of Sulfo-NHS-SS-Biotin, putting a gamma-aminopropylmethyldiethoxysilane modified gallium arsenide pasteelectrode into a solution, performing stirring and reacting at room temperature for 6 hours, taking out the electrode, washing with a phosphate buffer solution and absolute ethyl alcohol respectively,and drying to obtain the biomarker modified semiconductor paste electrode sensor. The electrode sensor has higher conductivity than a common carbon paste electrode, has specific recognition on aminoacid, and is high in sensitivity.

Description

technical field [0001] The invention relates to a preparation method of an electrochemical sensor, in particular to a preparation method of a biomarker-modified semiconductor paste electrode sensor and its application to detect amino acids. It belongs to the field of electrochemical analysis. Background technique [0002] Gallium arsenide is an important semiconductor material. It belongs to III-V group compound semiconductor. It is a sphalerite lattice structure with a lattice constant of 5.65×10-10m, a melting point of 1237°C and a band gap of 1.4 electron volts. Gallium arsenide entered the practical stage in 1964. Gallium arsenide can be made into a semi-insulating high-resistance material whose resistivity is more than 3 orders of magnitude higher than that of silicon and germanium, and is used to make integrated circuit substrates, infrared detectors, gamma photon detectors, etc. Because its electron mobility is 5 to 6 times larger than that of silicon, it has been...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/48G01N27/30G01N27/327B82Y15/00
CPCB82Y15/00G01N27/308G01N27/3277G01N27/3278G01N27/48
Inventor 李慧芝翟玉博赵淑英
Owner UNIV OF JINAN
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