Light irradiation Mn:ZnSe@ZnS quantum dot photoelectric sensor as well as preparation method and application thereof
A photoelectric sensor and quantum dot technology, which is applied in the field of nano-photoelectric sensors in analytical chemistry, can solve the problems of fast electrochemical deposition, expensive biological reagents, and easy peeling of the surface film, and achieve wide detection pH range, shortened detection time, The effect of quantitative analysis and detection of environmental protection
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[0044] A photoelectric sensor, from bottom to top, sequentially includes a conductive glass substrate, TiO 2 Layer, polydiallyl dimethyl ammonium chloride layer and Mn:ZnSe@ZnS core-shell quantum dot layer, the "core" of the core-shell quantum dots is Mn-doped ZnSe quantum dots, and the "shell" is the Irradiation of L-cysteine releases S 2- Formed ZnS.
[0045] The preparation method of the photoelectric sensor of the present embodiment comprises the following steps:
[0046] (1) Preparation of Mn:ZnSe quantum dots (ZnSe quantum dots doped with Mn), the flow chart is as follows figure 1 Shown:
[0047] a) According to the molar ratio of sodium borohydride, selenium powder, zinc acetate and L-cysteine in the precursor body liquid is 3:1:3:6, the molar fraction of manganese acetate is equivalent to zinc acetate is 10%, prepare raw materials;
[0048] b) Add 0.0211g of selenium powder, 0.0505g of sodium borohydride and 15mL of saturated deoxygenated ultrapure water into a...
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