A kind of composite titanium dioxide mesoporous film electrode material and preparation method thereof

Abstract

The invention discloses a composite titanium dioxide mesoporous thin-film electrode material and a preparation method thereof. The preparation method comprises: adding a titanium source and an antimony source compound to a hydrochloric acid solution, stirring and mixing to obtain a precursor solution after hydrothermal reaction, and spraying the solution Drying and calcining at high temperature to obtain mesoporous hollow spherical antimony-doped titanium dioxide composite material; placing in hydrochloric acid solution, ultrasonically dispersing, adding pyrrole monomer under stirring condition, stirring uniformly, adding oxidant dropwise, standing after completion of the reaction, filtering, drying to obtain polypyrrole@antimony / titanium dioxide composite material; uniformly mix the prepared polypyrrole@antimony / titanium dioxide composite material with polyvinylidene fluoride, add 1-methyl-2-pyridinone to prepare a slurry, It is uniformly coated on the conductive substrate, and calcined after drying to obtain the thin film electrode material. The composite thin film material prepared by the invention significantly improves the photoelectric performance of the titanium dioxide electrode material, and has a compact structure and stable performance.

Description

technical field [0001] The invention belongs to the field of photoelectric conversion, photovoltaic cell or thin film battery, and in particular relates to a composite titanium dioxide mesoporous thin film electrode material and a preparation method thereof. Background technique [0002] Titanium dioxide, as a semiconductor material, has attracted extensive attention as a promising electrode material for supercapacitors in recent years, however, TiO 2 The band gap energy is large, the recombination rate of photogenerated carriers is high, the utilization rate of solar energy is low, and the quantum efficiency is low. Therefore, it is necessary to improve the TiO-based 2 The utilization rate of visible light of the electrode and the recombination probability of electron-hole pairs are reduced. At present, the specific modification methods include ion doping, noble metal deposition, semiconductor compounding, organic dye modification and other methods. Although metal ion dop...

AI Technical Summary

Problems solved by technology

[0002] Titanium dioxide, as a semiconductor material, has attracted extensive attention as a promising electrode material for supercapacitors in recent years, however, TiO 2 The band gap energy is large, the recombination rate of photogenerated carriers is high, the utilization rate of solar energy is low, and the quantum efficiency is low. Therefore, it is necessary to improve the TiO-based 2 Utilization of visible light of electrodes and reduction of recombination probability of electron-hole pairs

Although metal ion doping and heavy metal deposition can improve TiO 2 It is active under visible light, but because metal ions are easy to form electron-hole recombination centers, it is necessary to precisely control the doping concentration. If the concentration is too high, it is easy to generate metal clusters and block TiO 2 surface, making TiO 2 The activity under ultraviolet light decreases or the activity under visible light is much lower than that under ultraviolet light; at the same time, the cost of metal doping is high and makes TiO 2 The stability becomes worse

The stability and service life of semiconductor composite materials are often unsatisfactory, and most organic dyes are toxic and easy to pollute the environment