Non-enzymatic biosensor based on metal-modified porous boron-doped diamond electrode and preparation method and application of non-enzymatic biosensor

A boron-doped diamond and biosensor technology, applied in the field of non-enzyme biosensor preparation, can solve the problems of quality control and production cost of enzyme-based sensors, and achieve the best detection performance

Active Publication Date: 2020-08-25
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the preparation, packaging, transportation and storage of enzyme-based sensors, there will inevitably be risks of exposure to thermal deformation and chemical deformation
This poses quality control and production cost issues for the commercialization of enzyme-based sensors

Method used

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  • Non-enzymatic biosensor based on metal-modified porous boron-doped diamond electrode and preparation method and application of non-enzymatic biosensor
  • Non-enzymatic biosensor based on metal-modified porous boron-doped diamond electrode and preparation method and application of non-enzymatic biosensor
  • Non-enzymatic biosensor based on metal-modified porous boron-doped diamond electrode and preparation method and application of non-enzymatic biosensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Step 1. Preparation of boron-doped diamond film. First place the silicon wafer substrate in an acetone solution, ultrasonically clean it for 5-20 minutes to remove surface oil stains; For the growth of boron diamond, the number of hot wire turns during the growth process is 10-20 turns, the temperature of the hot wire is controlled at 2000-2500°C, the surface temperature of the substrate is 700-900°C, and the gas ratio is methane / borane / hydrogen equal to 1 / 49 / 0.3, the chamber pressure is about 2.5-5 kPa, the grain size of the grown diamond film is 5-10 microns in diameter, and the film thickness ranges from 5-20 microns.

[0053] Step 2, nickel layer sputtering. The method is to use physical magnetron sputtering equipment, under the pressure of 0.5-2 Pa, use a high-purity nickel target with a purity of 99.99%, uniformly sputter a layer of nickel film on the diamond film in step 1, and the sputtering power is 50- 150 watts, the nickel layer thickness is 5-50nm.

[00...

Embodiment 2

[0060] Step 1. Preparation of boron-doped diamond film. First place the silicon wafer substrate in an acetone solution and ultrasonically clean it for 10 minutes to remove surface oil stains; then ultrasonically clean it in deionized water for 15 minutes, dry it in a drying oven and put it into a chemical vapor deposition chamber for boron-doped diamond growth , the number of turns of the hot wire during the growth process is 15 turns, the temperature of the hot wire is controlled at 2250°C, the surface temperature of the substrate is 800°C, the gas ratio is methane / borane / hydrogen equal to 1 / 49 / 0.3, and the chamber pressure is about 3.0 thousand Pa, the grain size of the grown diamond film is 6-8 microns in diameter, and the film thickness ranges from 10-15 microns.

[0061] Step 2, nickel layer sputtering. The method is to use physical magnetron sputtering equipment, under the pressure of 1 Pa, use a high-purity nickel target with a purity of 99.99%, uniformly sputter a lay...

Embodiment 3

[0067] Step 1. Preparation of boron-doped diamond film. First place the silicon wafer substrate in an acetone solution and ultrasonically clean it for 10 minutes to remove surface oil stains; then ultrasonically clean it in deionized water for 15 minutes, dry it in a drying oven and put it into a chemical vapor deposition chamber for boron-doped diamond growth , the number of turns of the hot wire during the growth process is 15 turns, the temperature of the hot wire is controlled at 2250°C, the surface temperature of the substrate is 800°C, the gas ratio is methane / borane / hydrogen equal to 1 / 49 / 0.3, and the chamber pressure is about 3.0 thousand Pa, the grain size of the grown diamond film is 6-8 microns in diameter, and the film thickness ranges from 10-15 microns.

[0068] Step 2, nickel layer sputtering. The method is to use physical magnetron sputtering equipment, under the pressure of 1 Pa, use a high-purity nickel target with a purity of 99.99%, uniformly sputter a lay...

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Abstract

The invention discloses a non-enzymatic biosensor based on a metal-modified porous boron-doped diamond electrode and a preparation method and application of the non-enzymatic biosensor. A working electrode of the non-enzymatic biosensor is a metal modified porous boron-doped diamond electrode, and the metal modified porous boron-doped diamond electrode comprises a silicon wafer substrate and an electrode working layer. The electrode working layer is arranged on the surface of the silicon wafer substrate, the electrode working layer is a porous boron-doped diamond layer, the surface of the porous boron-doped diamond layer is modified with metal nanoparticles, and the pore surface of the porous boron-doped diamond layer contains an sp2 phase. According to the invention, chemical vapor deposition and magnetron sputtering are combined, the preparation of the multi-metal modified porous boron-doped diamond composite material electrode is realized by the tubular atmosphere annealing furnaceand the electrochemical workstation, and the electrode has the characteristics of high sensitivity and stability and high resolution, and can be widely applied to the fields of construction of electrochemical biosensors, heavy metal detection and the like.

Description

technical field [0001] The invention relates to a non-enzyme biosensor based on a metal-modified porous boron-doped diamond electrode, a preparation method and application thereof, and belongs to the technical field of non-enzyme biosensor preparation. Background technique [0002] A biosensor (biosensor) is a device or device that organically combines biologically active materials (enzymes, proteins, DNA, antibodies, antigens, biofilms, etc.) It is also a rapid and trace analysis method at the molecular level of substances. According to the definition, the structure (composition) of a biosensor includes two parts: 1. Bioactive materials (also called biosensitive membranes, molecular recognition elements). 2. Physical transducers (also called sensors). Among them, this patent relates to the sensor part, and its function is to convert various biological, chemical and physical information into electrical signals. The information generated by the biological reaction process ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/327G01N27/30C23C28/00C23C16/27C23C14/35C23C14/16C23C14/58C25F5/00C25D15/00B82Y15/00B82Y40/00
CPCG01N27/3278G01N27/308C23C28/322C23C28/343C23C16/271C23C16/278C23C14/35C23C14/165C23C14/5873C23C14/5806C25F5/00C25D15/00B82Y15/00B82Y40/00G01N33/48714G01N33/48785
Inventor 魏秋平马莉周科朝曾思超朱睿童杨万林
Owner CENT SOUTH UNIV
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