Additive for texturing diamond wire cut monocrystalline silicon wafer, and application thereof

A diamond wire cutting, single-crystal silicon wafer technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of large alkali consumption and long texturing time, and achieve the reduction of alkali consumption and suede. The effect of better regularity and lower production costs

Inactive Publication Date: 2020-09-15
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Moreover, there are still problems of high alkali consumption and lon

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A texturing method for a diamond wire cut monocrystalline silicon wafer, comprising the following steps: 1) removing the damaged layer of the silicon wafer; 2) texturing; 3) cleaning;

[0039] Wherein, the texturing liquid of step 2) adopts 0.75wt% potassium hydroxide aqueous solution, and the additive is mixed in the texturing liquid; The mass percentage content of each component in the additive is: carboxymethylated chitosan 0.6%, alkyl glycoside 0.05%, sodium polystyrene sulfonate 0.5%, sodium formate 0.5%, sodium acetate 0.5% and the rest of water; the mass ratio of additives to potassium hydroxide aqueous solution is 0.5:100; the texture temperature is 81°C, velvet time 450s.

[0040] The reflectance of the textured sheet obtained in Example 1 was 10.5.

Embodiment 2

[0042] A texturing method for a diamond wire cut monocrystalline silicon wafer, comprising the following steps: 1) removing the damaged layer of the silicon wafer; 2) texturing; 3) cleaning;

[0043] Wherein, step 2) the texturizing solution for texturing adopts 0.5wt% sodium hydroxide aqueous solution, and additives are added in the texturing solution; the mass percentage of each component in the additive is: modified starch 1.2%, alkane 0.1% glycoside, 1.2% sodium polystyrene sulfonate, 0.5% sodium benzoate, 1.5% sodium acetate and the rest of water; the mass ratio of additives to sodium hydroxide aqueous solution is 0.6:100; the texture temperature is 82°C, Texturing time 420s.

[0044] The reflectance of the textured sheet obtained in Example 2 was 10.4.

Embodiment 3

[0046] A texturing method for a diamond wire cut monocrystalline silicon wafer, comprising the following steps: 1) removing the damaged layer of the silicon wafer; 2) texturing; 3) cleaning;

[0047] Among them, step 2) the texturing solution for texturing uses 1.0wt% potassium hydroxide aqueous solution, and additives are added to the texturing solution; the mass percentage of each component in the additive is: polylactic acid 3%, alkyl 0.1% glucoside, 1.8% sodium polystyrene sulfonate, 0.5% sodium benzoate, 2% sodium pyruvate and the rest of water; the mass ratio of additives to aqueous sodium hydroxide solution is 0.8:100; the texture temperature is 82°C, Texturing time 420s.

[0048] The reflectance of the textured sheet obtained in Example 3 was 10.7.

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PUM

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Abstract

The invention discloses an additive for texturing a diamond wire cut monocrystalline silicon wafer. The additive comprises, by mass, 0.2-4% of a water-soluble polymer substance, 0.05-0.15% of alkyl glycoside, 0.2-2% of sodium polystyrenesulfonate, 0.5-2.5% of organic acid sodium, and the balance of water. The additive disclosed by the invention is added into an alkaline texturing solution of the diamond wire cut monocrystalline silicon wafer, so that rapid texturing can be realized under the condition of low alkali concentration, and the alkali consumption required by texturing is reduced.

Description

technical field [0001] The invention relates to an additive for making texturing of diamond wire cut monocrystalline silicon slices and its application. Background technique [0002] In the silicon wafer end upstream of the photovoltaic industry, the diamond wire cutting technology for monocrystalline silicon has almost completely replaced the traditional mortar wire cutting. The cost advantages are mainly reflected in the high production capacity brought about by high cutting speed, the cleanliness of silicon wafers and the high utilization rate of silicon materials. . The metal content of diamond wire-cut silicon wafers is about 30% of that of mortar silicon wafers, and the service life is about 20% higher. At the same time, diamond wire cutting belongs to two-body grinding and cutting, which can cut thinner silicon wafers. [0003] The thickness of the damaged layer of a single crystal silicon wafer cut by diamond wire is about 3 to 5 microns, which is 50% less than the ...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B29/06
CPCC30B29/06C30B33/10
Inventor 张丽娟周树伟陈培良
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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