A method for preparing graphene single crystal wafer on copper-based textured film substrate
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
- Publication Date
- 2022-07-05
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Abstract
Description
technical field
[0001] The invention belongs to the field of material preparation, and more particularly relates to a method for preparing a graphene single crystal wafer on a copper-based textured film substrate. Background technique
[0002] Graphene has excellent optoelectronic properties and shows great application potential in various fields, which has attracted wide attention from all walks of life. Among the many applications of graphene, the most attractive one is in the field of microelectronics. Graphene as a channel material is an important candidate material to replace existing silicon materials due to its ultra-high carrier mobility and is expected to continue Moore's Law. Among them, the batch preparation of graphene single crystal wafers is the premise for its large-scale application in the field of microelectronics in the future. The preparation of existing graphene single crystal wafers mainly uses metal single crystals or germanium single crystals as subs...