P-type semiconductor graphite and preparation method thereof

A semiconductor and graphite technology, which is applied in the field of P-type semiconductor graphite and its preparation, can solve the problems of poor corrosion resistance and achieve the effects of improving hardness and corrosion resistance, good stability, and improving corrosion resistance

Inactive Publication Date: 2020-12-01
DATONG XINCHENG NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the shortcoming of the poor corrosion resistance of P-type se

Method used

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  • P-type semiconductor graphite and preparation method thereof

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[0031]Example one

[0032]The present invention provides a P-type semiconductor graphite and a preparation method thereof, comprising the following parts by weight of raw materials: copper foil, 10 parts of methane, 10 parts of hydrogen, 15 parts of boron source gas, 5 parts of polytetrafluoroethylene, 5 parts of silicon dioxide Parts, 1 part of titanium dioxide, 1 part of alumina, 5 parts of polyurethane;

[0033]The preparation method includes the following steps:

[0034]S1: Put the copper foil in the reactor, evacuate, and pass in argon protective gas, pass in hydrogen and methane, and react for 5 minutes to form part of the graphene film;

[0035]S2: Then pass a mixed gas of boron source gas and hydrogen into the reactor, and react for 10-30 minutes to obtain boron-doped P-type semiconductor graphene;

[0036]S3: Put polytetrafluoroethylene, silicon dioxide, titanium dioxide, aluminum oxide, and polyurethane into the mixing equipment, stir and mix at a stirring speed of 300r / min, stirring tim...

Example Embodiment

[0038]Example two

[0039]The present invention provides a P-type semiconductor graphite and a preparation method thereof, comprising the following parts by weight of raw materials: copper foil, 12 parts of methane, 12 parts of hydrogen, 17 parts of boron source gas, 7 parts of polytetrafluoroethylene, 7 parts of silicon dioxide Parts, 3 parts of titanium dioxide, 3 parts of alumina, 7 parts of polyurethane;

[0040]The preparation method includes the following steps:

[0041]S1: Put the copper foil in the reactor, vacuum, and pass in argon protective gas, pass in hydrogen and methane, and react for 10 minutes to form part of the graphene film;

[0042]S2: Then pass the mixed gas of boron source gas and hydrogen into the reactor and react for 20 minutes to obtain boron-doped P-type semiconductor graphene;

[0043]S3: Put polytetrafluoroethylene, silicon dioxide, titanium dioxide, aluminum oxide and polyurethane into the mixing equipment, stir and mix, stirring speed is 350r / min, stirring time is 1...

Example Embodiment

[0045]Example three

[0046] The present invention provides a P-type semiconductor graphite and a preparation method thereof, comprising the following parts by weight of raw materials: copper foil, 15 parts of methane, 15 parts of hydrogen, 20 parts of boron source gas, 10 parts of polytetrafluoroethylene, 10 parts of silicon dioxide Parts, 5 parts of titanium dioxide, 5 parts of alumina, 10 parts of polyurethane;

[0047]The preparation method includes the following steps:

[0048]S1: Put the copper foil in the reactor, evacuate, and pass in argon protective gas, pass in hydrogen and methane, and react for 20 minutes to form part of the graphene film;

[0049]S2: Then pass the mixed gas of boron source gas and hydrogen into the reactor, and react for 30 minutes to obtain boron-doped P-type semiconductor graphene;

[0050]S3: Put polytetrafluoroethylene, silicon dioxide, titanium dioxide, aluminum oxide, and polyurethane into the mixing equipment, stir and mix at a stirring speed of 400r / min, stir...

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Abstract

The invention belongs to the field of semiconductor graphite preparation, and particularly relates to P-type semiconductor graphite and a preparation method thereof. For solving the problem that existing P-type semiconductor graphite is poor in corrosion resistance, the following scheme is proposed currently, specifically, the P-type semiconductor graphite is prepared from the following raw materials in parts by weight: copper foil, 10-15 parts of methane, 10-15 parts of hydrogen, 15-20 parts of boron source gas, 5-10 parts of polytetrafluoroethylene, 5-10 parts of silicon dioxide, 1-5 parts of titanium dioxide, 1-5 parts of aluminum oxide and 5-10 parts of polyurethane. The preparation method of the P-type semiconductor graphite comprises the following steps: S1, the copper foil is put into a reactor, vacuumizing is performed, argon protective gas is introduced, and the hydrogen and the methane are introduced to react for 5-20 min so as to form a part of graphene film; and S2, mixed gas of the boron source gas and the hydrogen is introduced into the reactor to react for 10-30 min. According to the P-type semiconductor graphite and the preparation method thereof, the corrosion resistance of the P-type semiconductor graphite can be improved, and the preparation method is simple.

Description

technical field [0001] The invention relates to the field of semiconductor graphite preparation, in particular to a P-type semiconductor graphite and a preparation method thereof. Background technique [0002] Hole-type semiconductors, also known as P-type semiconductors, are semiconductors dominated by positively charged holes. Doping a small amount of trivalent element indium or aluminum into pure silicon, because there are 3 valence electrons around the indium or aluminum atom, when forming a covalent bond with the surrounding 4-valent silicon atom, it lacks an electron and forms a hole. Holes act as positively charged particles and play a major role in the conduction of these semiconductors. [0003] The existing P-type semiconductor graphite has poor corrosion resistance, so we propose a P-type semiconductor graphite and its preparation method to solve the above problems. Contents of the invention [0004] The purpose of the present invention is to solve the shortco...

Claims

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Application Information

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IPC IPC(8): C23C16/26C23C16/56C01B32/186C01B32/194C09D127/18C09D175/04C09D7/61C09D5/08
CPCC23C16/26C23C16/56C01B32/186C01B32/194C09D127/18C09D175/04C09D7/61C09D5/08C08K2003/2241C08K2003/2227C08L2201/08
Inventor 王志辉张培林武建军柴利春张作文
Owner DATONG XINCHENG NEW MATERIAL CO LTD
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