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Indirectly-heated silicon-based film catalytic hydrogen sensor and processing method thereof

A silicon-based thin-film, side-heating technology, applied in the field of hydrogen sensors, can solve the problems of hydrogen sensor selectivity, safety and stability, weak sensitivity output signal, stability and service life need to be further improved, and the specific surface area of ​​porous ceramics decreases, etc. problem, achieve the effect of reducing cross-interference, improving stability and reliability, and reducing thermal shock

Active Publication Date: 2020-12-04
SUZHOU INNOMIC ELECTRONIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The diameter of the catalyst is about 0.5-1mm, and the platinum wire is easily broken under strong vibration; the noble metal catalyst supported by porous ceramics has a high response to all combustible gases, so it can only be used as a combustible gas sensor. Non-single hydrogen sensor
[0004] At the same time, the porous ceramics of the catalyst are very easy to absorb fine particles in the air, resulting in a significant decrease in the specific surface area of ​​the porous ceramics, and the catalytic activity is also greatly reduced. This means that the sensor needs to be calibrated regularly to correct errors, and the service life is also greatly improved. reduce
[0005] Our company's Chinese patent document "A Hydrogen Sensor and Its Processing Method" with the application number 201810220141.2 discloses a miniature hydrogen sensor that can measure any hydrogen concentration, making up for the shortcomings of the existing technology; making the hydrogen sensor selectivity, Issues such as security, stability, sensitivity, and weak output signals have been resolved to varying degrees
However, the stability and service life of the device still need to be further improved

Method used

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  • Indirectly-heated silicon-based film catalytic hydrogen sensor and processing method thereof
  • Indirectly-heated silicon-based film catalytic hydrogen sensor and processing method thereof
  • Indirectly-heated silicon-based film catalytic hydrogen sensor and processing method thereof

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Embodiment 1

[0059] A processing method for side-heated silicon-based thin film catalytic hydrogen sensors, comprising the following steps:

[0060] S1: Clean the silicon substrate with standard RCA process and dry it with nitrogen gas;

[0061] S2: Deposit a silicon nitride layer on the cleaned silicon substrate 1 by a low-pressure chemical vapor deposition method, and then deposit a silicon dioxide layer on the surface of the silicon nitride layer by a plasma-enhanced chemical vapor deposition method to obtain a heat insulating layer 2;

[0062] S3: On the substrate obtained in S2, a layer of high-temperature buffer layer 11 is deposited on the surface of the heat-insulating layer 2 obtained in step S2 by magnetron sputtering;

[0063] S4: On the substrate obtained in S3, perform coating, photolithography, and development treatments, and use magnetron sputtering or deposition to deposit a material layer with a high temperature coefficient of resistance, and use the lift-off process to ob...

Embodiment 2

[0070] A processing method for side-heated silicon-based thin film catalytic hydrogen sensors, comprising the following steps:

[0071] S1: Cleaning the silicon substrate 1 by using a standard RCA process, and drying it with nitrogen gas;

[0072] S2: Deposit a silicon nitride layer on the cleaned silicon substrate 1 by a low-pressure chemical vapor deposition method, and then deposit a silicon dioxide layer on the surface of the silicon nitride layer by a plasma-enhanced chemical vapor deposition method to obtain a heat insulating layer 2;

[0073] S3: On the substrate obtained in S2, deposit a high-temperature buffer layer 11 on the surface of the heat insulating layer 2 obtained in step S2 by thermal evaporation deposition;

[0074] S4: On the substrate obtained in S3, perform coating, photolithography, and development treatments, and use the deposition method in step S3 to deposit a material layer with a high temperature coefficient of resistance, and use the lift-off proc...

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Abstract

The invention provides an indirectly-heated silicon-based film catalytic hydrogen sensor, which is obtained by an MEMS processing technology and comprises a silicon substrate. The upper surface of thesilicon substrate is provided with a heat insulation layer, and the lower surface of the silicon substrate is provided with one or a pair of heat insulation grooves extending to the heat insulation layer. A pair of heating coils made of high-resistance temperature coefficient materials is arranged on the surface of the heat insulation layer, catalytic film layers are arranged on the inner sides,the outer sides or the upper portions of the heating coils, a high-temperature-resistant medium layer covers one surface of each catalytic film layer, a gap is reserved in the other surface of each catalytic film layer, and precious metal film resistors are arranged on the outer ring of the heat insulation layer. The hydrogen sensor provided by the invention can work in a catalytic combustion modeand a thermal conductivity mode at the same time, and is small in size, low in power consumption, quick in response and long in service life.

Description

technical field [0001] The invention belongs to the technical field of hydrogen sensors, and in particular relates to a side-heating silicon-based thin-film catalytic hydrogen sensor and a processing method thereof. Background technique [0002] The catalytic combustion gas sensor uses the thermal effect principle of catalytic combustion. The detection element and the compensation element are paired to form a measuring bridge. If it rises, the resistance of the platinum wire inside it will also increase accordingly, so that the balance bridge will be out of balance, and an electrical signal proportional to the concentration of combustible gas will be output. [0003] In order to improve the catalytic efficiency, the catalyst is usually made of a noble metal catalyst supported by porous alumina ceramics, usually olive-shaped or spherical, so it is called a bead element. The catalyst consists of very fine platinum filaments, usually only 25-50 microns. The diameter of the ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N25/32G01N27/16B82Y15/00B82Y40/00
CPCG01N25/32G01N27/16B82Y15/00B82Y40/00
Inventor 沈方平
Owner SUZHOU INNOMIC ELECTRONIC TECH CO LTD
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