Silicon nitride phased array chip based on suspended waveguide structure

Abstract

The invention discloses a silicon nitride phased array chip based on a suspended waveguide structure. The silicon nitride phased array chip comprises a silicon nitride waveguide region and a suspendedwaveguide region, wherein the silicon nitride waveguide region II is composed of a silicon-based substrate, a silicon dioxide buffer layer, a silicon dioxide cladding and a silicon nitride waveguide-based core layer; the core layer comprises a light beam splitting unit, a first bent waveguide, a thermo-optical phase shifter and a spot size converter; and the suspended waveguide region comprises asecond bent waveguide and an array grating antenna. The silicon nitride phased array chip based on a suspended waveguide structure has a good application prospect in video imaging, bioluminescence detection, and optical phased array light beam deflection and scanning.

Description

technical field [0001] The invention belongs to the technical field of integrated photonic chips, and in particular relates to a silicon nitride phased array chip based on a suspended waveguide structure in the 1550nm band. Background technique [0002] With the rapid development of silicon-based optoelectronic integration technology, silicon-based photonics technology has been widely studied, and thousands of optoelectronic devices can be integrated on a chip. This technology is suitable for making laser radar light emitting modules, called optical phased array. A large number of infrared beam scanning chips made of silicon materials are widely used in lidar systems and optical communication systems, and exhibit low loss, high precision, high stability, anti-interference, small size and fast scanning. . Silicon-based optoelectronics technology is the use of complementary metal oxide semiconductor (CMOS) technology to realize the integrated preparation of photonic devices....

AI Technical Summary

Problems solved by technology

[0007] However, limited by the refractive index difference between the silicon nitride core layer and the silicon oxide cladding layer, the distance between waveguide elements is small, and coupling crosstalk is prone to occur between adjacent waveguides, which deteriorates the quality of the far-field outgoing beam.

Therefore, the silicon nitride phased array beam deflection chips that have been reported so far usually have a large spacing between the waveguide elements, resulting in side lobes that are closer to the main peak, which limits the beam scanning range.

Images