Copper indium gallium selenide thin film solar cell module and preparation method thereof

Abstract

The invention provides a copper indium gallium selenium thin film solar cell module and a preparation method thereof. The method includes: providing a copper indium gallium selenide solar cell thin film; scoring the battery thin film, and the depth of the marking stops at the upper surface of the substrate to form a first marking slit; use picosecond infrared laser to scribe the battery film, and the scribing depth stops at the upper surface of the back electrode layer to form the third slit; apply insulating material to the first and third slits; use picosecond The infrared laser scribes the battery film, and the scribing depth stops at the upper surface of the back electrode layer, forming a second slit between the first slit and the third slit; conducts electricity to the second slit Material coating. Through the one-stop centralized laser scribing process, the equipment error is small, the process window is large, and there is no need to adjust the coating process to adapt to the scribing process, which improves process compatibility; no burrs or residual debris on the surface, eliminating the potential short circuit of the battery; engraved line width Small, reducing the dead zone area and improving the conversion efficiency of battery components.

Description

technical field [0001] The invention relates to the technical field of thin film solar cells, in particular to a copper indium gallium selenium thin film solar cell component and a preparation method thereof. Background technique [0002] With the increasing energy crisis and environmental pollution, how to increase the proportion of renewable energy and adjust the energy structure has become the mainstream of social development. As an important renewable energy source, solar energy has received extensive attention and developed rapidly in recent years. [0003] copper indium gallium selenide (CuInGaSe 2 , referred to as CIGS) thin-film solar cell is a device that can convert light energy into electrical energy, and its basic structure includes p-type CIGS and n-type CdS / In 2 S 3 A PN heterojunction formed after semiconductor materials are in contact with each other, in which the direction of the built-in electric field of the PN junction is from the n-type semiconductor ...

AI Technical Summary

Problems solved by technology

Although the mechanical scribing method is simple and direct, the large line width leads to a large dead zone, which affects the photoelectric conversion efficiency; the edge chipping phenomenon is serious, and the residue falls into the groove, which may cause a short circuit; the mechanical needle directly contacts the film layer, causing wear and tear. Large, it needs to be shut down for replacement every few days, which seriously affects production; at the same time, the laser equipment for marking processes in different processes is far away from each other, and cannot be processed in a centralized manner. The cost of equipment is high, the error is large, and the efficiency is low

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