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A method for room temperature growth and post-processing of high-mobility oxide semiconductor thin films on flexible substrates

A technology for oxide semiconductors and flexible substrates, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as constraints, low mobility, etc., to repair film defects, improve flatness, high quality and performance Effect

Active Publication Date: 2022-04-29
滕州创感电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Even in most cases, the mobility of these oxide semiconductor thin films is only 0.01 to 1 cm 2 / Vs, the low mobility of oxide semiconductor films grown on flexible substrates at room temperature has severely restricted their applications

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] ZnO semiconductor thin film is grown at room temperature by magnetron sputtering method, and the substrate used is PET substrate, with N 2 O-O 2 The mixed gas is the working atmosphere, the total pressure of the atmosphere is 2Pa, N 2 O:O 2 The partial pressure ratio is 1:9. The follow-up treatment scheme of the ZnO film grown at room temperature is as follows: the first step, Ar plasma treatment, Ar pressure 5Pa, power 70W, Ar plasma bombardment film for 12min; the second step, pulse laser treatment, N 2 Working atmosphere, laser power 5mJ / cm 2 , the irradiation time to the film is 25ns, and the number of pulses is 1 time; the third step, O 2 Plasma treatment, O 2 Air pressure 7Pa, power 15W, O 2 Plasma bombarded the film for 40 minutes; the fourth step, UV light treatment, 254nm UV light, power 300mW / cm 2 , the film irradiation time 25min.

[0027] The ZnO semiconductor film prepared by the above method was subjected to the Hall test, and the results showed th...

Embodiment 2

[0029] SnO 2 The semiconductor thin film is grown at room temperature by electron beam evaporation, and the substrate used is a PET substrate, with N 2 O-O 2 The mixed gas is the working atmosphere, the total pressure of the atmosphere is 3Pa, N 2 O:O 2 The partial pressure ratio is 1:9. SnO grown at room temperature 2 The follow-up treatment plan of the film is as follows: the first step, Ar plasma treatment, Ar pressure 7Pa, power 80W, Ar plasma bombardment film for 15min; the second step, pulse laser treatment, N 2 Working atmosphere, laser power 8mJ / cm 2 , the irradiation time to the film is 27ns, and the number of pulses is 1 time; the third step, O 2 Plasma treatment, O 2 Air pressure 9Pa, power 18W, O 2 Plasma bombarded the film for 45 minutes; the fourth step, UV light treatment, 254nm UV light, power 400mW / cm 2 , The irradiation time of the film is 27min.

[0030] The SnO prepared by the above method 2 Semiconductor thin film, Hall test, the result shows th...

Embodiment 3

[0032] In 2 o 3 The semiconductor film is grown at room temperature by pulsed laser deposition method, and the substrate used is PC substrate, with N 2 O-O 2 The mixed gas is the working atmosphere, the total pressure of the atmosphere is 3Pa, N 2 O:O 2 The partial pressure ratio is 1:9. In grown at room temperature 2 o 3 The follow-up treatment plan of the film is as follows: the first step, Ar plasma treatment, Ar pressure 5Pa, power 75W, Ar plasma bombardment film for 12min; the second step, pulse laser treatment, N 2 Working atmosphere, laser power 7mJ / cm 2 , the irradiation time to the film is 25ns, and the number of pulses is 1 time; the third step, O 2 Plasma treatment, O 2 Air pressure 7Pa, power 15W, O 2 Plasma bombarded the film for 40 minutes; the fourth step, ultraviolet light treatment, 254nm ultraviolet light, power 350mW / cm 2 , The irradiation time of the film is 27min.

[0033] In prepared by the above method 2 o 3 Semiconductor film, Hall test, t...

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Abstract

The invention discloses a method for preparing an ultrahigh-mobility oxide semiconductor thin film on a flexible substrate at room temperature. The oxide semiconductor thin film is grown on an organic polymer flexible substrate in an oxidative atmosphere at room temperature, and then the post-treatment includes the following four-step processing process. , the first step is Ar plasma treatment, the second step is pulsed laser treatment, and the third step is O 2 Plasma treatment, the fourth step is ultraviolet light treatment. The above preparation techniques and processes are sequential and organically unified, and the prepared ZnO and SnO 2 、In 2 o 3 , Ga 2 o 3 、TiO 2 , InGaZnO, ZnAlSnO films, the Hall mobility can exceed 100cm 2 / Vs, can be widely used in fast-response flexible electronic and optoelectronic devices.

Description

technical field [0001] The invention relates to a technology for preparing an oxide semiconductor thin film, in particular to a technology for preparing an oxide semiconductor thin film with a flexible substrate and ultrahigh mobility at room temperature. Background technique [0002] With the development and progress of society, people have higher and higher requirements for information electronic products. Flexible electronic devices are considered to be a new type of information electronic products in the future, with the characteristics of wearable, portable and intelligent. As we all know, flexible electronic devices need to use organic polymer substrates, and the heat-resistant temperature of organic substrates is very low, usually lower than 150 ° C, which requires the growth of functional layer films on this substrate at low temperature, especially Can grow at room temperature. Among many semiconductor materials, oxide semiconductor thin films can be grown at room t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02367H01L21/02422H01L21/02554H01L21/02612H01L21/02675
Inventor 马建
Owner 滕州创感电子科技有限公司
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