Fin type photovoltaic silicon-based plasmon hot carrier infrared detection chip and manufacturing method thereof

Abstract

The invention belongs to the technical field of photoelectric detection, and particularly relates to a fin type photovoltaic silicon-based plasmon hot carrier infrared detection chip and a manufacturing method thereof. The infrared detection chip comprises an SOI substrate, a pixel array manufactured in top silicon of the SOI substrate, a signal reading circuit manufactured in bottom silicon of the SOI substrate and a through hole interconnection structure manufactured in a middle dielectric layer. Each single-image component comprises a metal electrode, a silicon nanowire array and a fin-typeconstruction metasurface integrated on a nanowire, so that perfect absorption of infrared radiation is achieved, absorbed photons are converted into surface plasmon hot carriers to be transferred into a semiconductor, photovoltaic signals are generated, and the detection function is achieved. The detection chip is manufactured by adopting a three-dimensional integration process, an infrared sensing unit and a signal processing unit are vertically stacked, vertical interconnection in the Z direction is realized between layers by utilizing a through hole filling technology, and the monolithic focal plane array detection chip with high density, low power consumption and ultra-large array scale is obtained.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a fin-type photovoltaic silicon-based plasmon hot carrier infrared detection chip and a manufacturing method thereof. Background technique [0002] The materials currently used in short-wave infrared (1-3μm) photodetection are almost all dominated by III-V / II-VI materials, such as: InGaAs, HgCdTe, InSb, etc. However, these materials have more or less the following defects: high cost of materials, environmental pollution due to high toxicity, extremely complex and unstable material growth and device preparation processes, low temperature work, and inability to realize large area (currently the largest area of ​​GaAs is 6 inches), etc.; the chip structure prepared by it basically consists of two parts: the infrared sensitive array prepared by MEMS technology and the signal readout circuit prepared by CMOS technology, and then the two parts are integrated...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a fin-type photovoltaic silicon-based plasmon hot carrier infrared detection chip and its manufacturing method, so as to solve the problem that silicon materials cannot work due to the band gap limitation and the wave band greater than 1.1 μm, and overcome the current photovoltaic The defects of low responsivity, quantum efficiency and detection rate and high dark current of silicon-based thermionic infrared devices realize high sensitivity and multi-band infrared monitoring capabilities of all-silicon-based photodetectors

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