Fin-type photovoltaic silicon-based plasmon hot carrier infrared detection chip and manufacturing method thereof

Abstract

The invention belongs to the technical field of photoelectric detection, in particular to a fin-type photovoltaic silicon-based plasmon hot carrier infrared detection chip and a manufacturing method thereof. The infrared detection chip of the present invention includes an SOI substrate, a pixel array fabricated in the top silicon of the SOI substrate, a signal readout circuit fabricated in the bottom silicon of the SOI substrate, and a through-hole interconnection fabricated in the intermediate dielectric layer structure. Each single-image device includes: metal electrodes, silicon nanowire arrays, and fin-like metasurfaces integrated on the nanowires to achieve perfect absorption of infrared radiation and convert the absorbed photons into surface plasmons The excitonic hot carriers are transferred to the semiconductor to generate photovoltaic signals and realize the detection function. The detection chip of the present invention is manufactured by a three-dimensional integration process, and the infrared sensing unit and the signal processing unit are stacked vertically, and the through hole filling technology is used to realize the vertical interconnection in the Z direction between the layers, so as to obtain a single chip with high density, low power consumption, and super large array scale Focal plane array detector chip.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a fin-type photovoltaic silicon-based plasmon hot carrier infrared detection chip and a manufacturing method thereof. Background technique [0002] The materials currently used in short-wave infrared (1-3μm) photodetection are almost all dominated by III-V / II-VI materials, such as: InGaAs, HgCdTe, InSb, etc. However, these materials have more or less the following defects: high cost of materials, environmental pollution due to high toxicity, extremely complex and unstable material growth and device preparation processes, low temperature work, and inability to realize large area (currently the largest area of ​​GaAs is 6 inches), etc.; the chip structure prepared by it basically consists of two parts: the infrared sensitive array prepared by MEMS technology and the signal readout circuit prepared by CMOS technology, and then the two parts are integrated...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a fin-type photovoltaic silicon-based plasmon hot carrier infrared detection chip and its manufacturing method, so as to solve the problem that silicon materials cannot work due to the band gap limitation and the wave band greater than 1.1 μm, and overcome the current photovoltaic The defects of low responsivity, quantum efficiency and detection rate and high dark current of silicon-based thermionic infrared devices realize high sensitivity and multi-band infrared monitoring capabilities of all-silicon-based photodetectors

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