Slurry of high-performance aluminum nitride ceramic substrate and preparation method thereof

Abstract

The invention provides slurry of a high-performance aluminum nitride ceramic substrate and a preparation method thereof. The slurry is prepared from the following components in parts by mass: 100 parts of aluminum nitride powder, 1-8 parts of a sintering aid, 0.1-4 part of sialon particles, 1-6 parts of a dispersing agent, 38-68 parts of a solvent, 3-12 parts of a binder and 3-10 parts of a plasticizer. The sintering aid is prepared from the following components in parts by mass: 0-8 parts of Y2O3, 0-5 parts of Sm2O3, 0-1 part of La2O3 and 0.05-3 part of metal aluminum powder; wherein the solvent is one or more of absolute ethyl alcohol, isopropanol and n-butyl alcohol. Sialon particles are dispersed in a slurry system to play a toughening role; the multi-element sintering aid is helpful for reducing the sintering temperature and promoting the sintering compactness; the metal aluminum powder can react with oxygen impurities, the heat conductivity is effectively improved, generation ofaluminum nitride is facilitated in the nitrogen atmosphere, and sintering densification is further promoted. The product is applied to alcohol and other non-toxic, low-toxicity and low-cost solvents for replacing benzene, ketone and other toxic solvents, and the problem that preparation of the aluminum nitride ceramic is not friendly to human beings and the environment is solved.

Description

technical field [0001] The invention relates to the technical field of preparation of an aluminum nitride ceramic substrate, in particular to a slurry and a preparation method of a high-performance aluminum nitride ceramic substrate. Background technique [0002] With the development of high-power and ultra-large-scale integrated circuits, the heat dissipation requirements between integrated circuits and substrates are getting higher and higher, so substrate materials need to have higher thermal conductivity and resistivity. [0003] Aluminum nitride (A1N) is a covalent bond compound with a hexagonal wurtzite structure. It has high thermal conductivity, good high-temperature insulation and dielectric properties, high material strength at high temperatures, and a thermal expansion coefficient that matches semiconductor silicon materials. With a series of advantages such as non-toxicity, it has become an ideal heat dissipation material for electronic packaging and a high-perfo...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to reduce the pollution problem of aluminum nitride ceramic substrate tape-casting molding process, and to solve the current problem of soft aluminum nitride ceramic substrate substrate and difficult processing