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Self-powered detector containing gallium nitride/gallium oxide nanocolumn array and its preparation method

A nano-pillar array, gallium oxide technology, applied in the field of photodetectors, can solve the problems of low energy consumption, low manufacturing cost, high signal-to-noise ratio, etc., and achieve the effect of improving the absorption coefficient, expanding the scope of use, and low lattice mismatch

Active Publication Date: 2022-05-17
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As we all know, the practical application of photodetectors requires fast response speed, high signal-to-noise ratio, low energy consumption and low manufacturing cost, and most of the detectors are photoconductive, and the response speed is relatively slow. External energy supply to separate the photogenerated electron-hole pairs to obtain the desired responsivity not only greatly increases the size and energy consumption of the devices, but also greatly limits their application range.

Method used

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  • Self-powered detector containing gallium nitride/gallium oxide nanocolumn array and its preparation method
  • Self-powered detector containing gallium nitride/gallium oxide nanocolumn array and its preparation method
  • Self-powered detector containing gallium nitride/gallium oxide nanocolumn array and its preparation method

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Embodiment 1

[0044] A self-powered solar-blind photodetector based on GaN / GaO nanopillar array heterojunction:

[0045] The structural schematic diagram of the photodetector is as figure 1As shown, it includes a PET flexible substrate 1, a p-type gallium nitride layer 2, a PMMA filling layer 3, a β-gallium oxide nanocolumn array 4, a graphene transparent conductive electrode 5, and a Ti / Au electrode 6;

[0046] The schematic diagram of the growth structure of the p-type gallium nitride layer 2 is as follows figure 2 As shown, it includes a sapphire substrate 7 , a GaN buffer layer 8 , a heavily doped n-GaN layer 9 , and a Mg-doped p-type GaN layer 2 .

Embodiment 2

[0048] Preparation of a self-powered solar-blind photodetector based on gallium nitride / gallium oxide nanocolumn array heterojunction. The schematic diagram of the preparation process is shown in image 3 Shown:

[0049] 1) Clean the flexible substrate: Soak the PET substrate 1 in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;

[0050] 2) Preparation of p-type gallium nitride layer: use MOCVD equipment to sequentially grow 25-30nm GaN buffer layer 8, 2-3μm heavily doped n-GaN layer 9, 300-400nm Mg-doped P-GaN layer 2;

[0051] 3) Preparation of β-gallium oxide nanocolumn array: on the p-type gallium nitride layer 2, metal gallium is used as the vapor source to form a β-gallium oxide nanocolumn array through a CVD process, such as Figure 4 As shown, it specifically includes the following steps:

[0052] a. Au is deposited on the p-type gallium nitride lay...

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Abstract

The invention belongs to the technical field of photodetectors, and in particular relates to a self-powered detector containing a gallium nitride / gallium oxide nanocolumn array and a preparation method thereof. The structure of the detector is an electrode, a flexible substrate, a p-type gallium nitride layer, a β-gallium oxide nanocolumn array, and an electrode arranged in sequence, and the filling layer wraps the side of the β-gallium oxide nanocolumn array. For filling the β-gallium oxide nanocolumn array, a graphene transparent electrode is also included between the β-gallium oxide nanocolumn array and the electrodes. The present invention takes the heterojunction composed of gallium nitride / gallium oxide nanocolumn arrays as the core of the device, and prepares gallium oxide nanoarrays on the gallium nitride film, and there is a small lattice distortion at the interface between gallium oxide and gallium nitride. With a low conduction band offset, it can further provide high photodetector performance, and the detector can be driven to work without an external power supply, further expanding the use range of the detector, and has potential application prospects in the field of solar-blind ultraviolet detection.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, and in particular relates to a self-powered detector containing a gallium nitride / gallium oxide nanocolumn array and a preparation method thereof. Background technique [0002] Due to the strong absorption capacity of stratospheric ozone, ultraviolet rays below 280nm from the sun cannot penetrate the atmosphere to reach the surface of the earth, so it is called the solar blind zone. The so-called solar-blind photodetector is a photodetector that works in this area. Since the interference of solar radiation can be avoided, very weak signals can be accurately detected under sunlight. Therefore, solar-blind photodetectors have many potential applications, such as missile warning and tracking, high-voltage arc discharge detection, ozone monitoring, and non-line-of-sight optical communication. [0003] Due to the characteristics of large band gap, solution processability, low cost, and enviro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/109H01L31/0224H01L31/0336H01L31/0352H01L31/0392H01L31/18
CPCH01L31/109H01L31/035227H01L31/03926H01L31/0336H01L31/022408H01L31/022466H01L31/18Y02E10/50
Inventor 尹以安李佳霖
Owner SOUTH CHINA NORMAL UNIVERSITY