A method for rapid preparation of ultra-thin epitaxial bismuth ferrite thin films based on microwave hydrothermal method

A technology of microwave hydrothermal method and bismuth ferrite, which is applied in chemical instruments and methods, iron compounds, inorganic chemistry, etc., can solve the problems of expensive equipment, high vacuum target materials, and no reports, etc., and achieve the reduction of electric energy and the reduction of chemical raw materials Reduced effect

Active Publication Date: 2022-05-24
NANJING INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the methods for preparing bismuth ferrite thin films mainly include physical vapor deposition methods such as pulsed laser deposition and magnetron sputtering. These methods can prepare ultra-thin epitaxial bismuth ferrite thin films, but the equipment is expensive and requires high vacuum and expensive targets.
The sol-gel method can prepare bismuth ferrite film, but it has a polycrystalline structure and the density is not good. The epitaxial bismuth ferrite film can be prepared by hydrothermal method [patent CN109825873A], but it takes about several hours of reaction time for the film to cover Substrate, the complete film thickness is as high as about 10 microns, which cannot be applied to some devices
At present, there is no report on the rapid preparation of ultra-thin epitaxial bismuth ferrite thin films by microwave hydrothermal method

Method used

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  • A method for rapid preparation of ultra-thin epitaxial bismuth ferrite thin films based on microwave hydrothermal method
  • A method for rapid preparation of ultra-thin epitaxial bismuth ferrite thin films based on microwave hydrothermal method

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Experimental program
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Embodiment 1

[0015] Step 1. Put a 0.5mm×0.5mm strontium titanate single crystal substrate into a plasma cleaning machine, clean and activate for 10 minutes, the radio frequency power is 100W, and the frequency is 13.56Hz.

[0016] Step 2, take 0.404 ferric nitrate nonahydrate (Fe(NO) 3 ) 3 ·9H 2 O) and 0.485 g of bismuth nitrate nonahydrate (Bi(NO) 3 ) 3 ·5H 2 O), and 0.560g of KOH, dissolved in 27g of water, and stirred evenly to obtain a precursor suspension.

[0017] Step 3. Pour the suspension obtained in step 2 into the polytetrafluoroethylene reactor, then take out the activated substrate quickly, place the polished side down on the polytetrafluoroethylene support, put the support into the The height of the bottom polished surface from the bottom of the reaction kettle is 4 mm.

[0018] Step 4. Put the reaction kettle into a microwave hydrothermal synthesizer, heat it, and heat it to 140 degrees Celsius with a power of 300W within 8 minutes, then heat it to 180 degrees Celsius ...

Embodiment 2

[0021] Step 1. Put a 0.5mm×0.5mm doped strontium niobate titanate single crystal substrate into a plasma cleaning machine, clean and activate for 10 minutes, the radio frequency power is 100W, and the frequency is 13.56Hz.

[0022] Step 2: Dissolve 0.270g of ferric trichloride hexahydrate, 0.705g of bismuth sulfate, and 0.400g of NaOH in 27g of water and stir evenly to obtain a precursor suspension.

[0023] Step 3. Pour the suspension obtained in step 2 into the polytetrafluoroethylene reactor, then take out the activated substrate quickly, place the polished side down on the polytetrafluoroethylene support, put the support into the The height of the bottom polished surface from the bottom of the reaction kettle is 4 mm.

[0024] Step 4. Put the reaction kettle into a microwave hydrothermal synthesizer, heat it, and heat it to 140 degrees Celsius with a power of 300W within 8 minutes, then heat it to 180 degrees Celsius within 17 minutes and keep it warm to grow a film.

[0...

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Abstract

The invention discloses a method for rapidly preparing an ultra-thin epitaxial bismuth ferrite film based on a microwave hydrothermal method. The preparation process of the method is to firstly clean a single crystal substrate with a perovskite structure through oxygen plasma to obtain an activated bismuth ferrite film. surface, and then put the substrate in a custom-made polytetrafluoroethylene mold, put it into the reaction kettle, and then add it to the suspension mixed with iron salt, bismuth salt and potassium hydroxide mineralizer, microwave heating reaction After 25 minutes, the substrate was removed, and after ultrasonic cleaning and drying with dilute nitric acid, ethanol and deionized water, an ultra-thin epitaxial bismuth ferrite film was obtained. 001) direction epitaxial structure.

Description

technical field [0001] The invention belongs to the technical field of single crystal film growth, in particular to an ultra-thin epitaxial FeBiO obtained by processing a single crystal perovskite substrate, preparing a precursor and growing a thin film. 3 thin film method. Background technique [0002] Bismuth Ferrite (BiFeO 3 ) is a material with a perovskite structure with a ferroelectric Curie temperature of 830 °C and an antiferromagnetic Neel temperature of 370 °C. Hotspots have potential applications in random access memory, sensors, filters, spintronic devices, etc., and have a relatively narrow band gap. They are the most potential ferroelectric semiconductors in the field of ferroelectric photovoltaics. Large remanent polarization, and ultra-high Curie temperature, so it also has broad application prospects in the field of ferroelectric and piezoelectric devices. The two-dimensional bismuth ferrite film, especially the high-quality ultra-thin epitaxial ferroelec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00
CPCC01G49/00C01P2004/20C01P2004/03C01P2002/72C01P2004/62
Inventor 朱睿健王增梅邹雪雪李铭贺显聪尹康
Owner NANJING INST OF TECH
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